Structure info
Layer group p-3m1
Layer group number 72
Structure origin Lyngby22_LDP
Stability
Energy above convex hull [eV/atom] 0.070
Heat of formation [eV/atom] -0.786
Dynamically stable No
Basic properties
Magnetic No
Band gap (PBE) [eV] 0.686
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 3.697 0.000 0.000 Yes
2 -1.849 3.202 0.000 Yes
3 0.000 -0.000 36.367 No
Lengths [Å] 3.697 3.697 36.367
Angles [°] 90.000 90.000 120.001

Symmetries
2D Bravais type Hexagonal (hp)
Layer group number 72
Layer group p-3m1
Space group number (bulk in AA-stacking) 164
Space group (bulk in AA-stacking) P-3m1
Point group -3m
Inversion symmetry Yes
Structure data
Formula Al2Se3
Stoichiometry A2B3
Number of atoms 5
Unit cell area [Å2] 11.837
Thickness [Å] 6.026

Al2Se3 (1Al2Se3-1)
Heat of formation [eV/atom] -0.79
Energy above convex hull [eV/atom] 0.07
Monolayers from C2DB
Al8Se12 (4Al2Se3-1) -0.86 eV/atom
Al4Se6 (2Al2Se3-1) -0.84 eV/atom
Al4Se6 (2Al2Se3-2) -0.83 eV/atom
Al4Se6 (2Al2Se3-3) -0.81 eV/atom
Al2Se3, (1Al2Se3-1) -0.79 eV/atom
Al6Se9 (3Al2Se3-1) -0.77 eV/atom
Al2Se3 (1Al2Se3-2) -0.77 eV/atom
Al3Se4 (1Al3Se4-1) -0.72 eV/atom
Al2Se2 (2AlSe-1) -0.72 eV/atom
Al2Se2 (2AlSe-2) -0.71 eV/atom
Al2Se2 (2AlSe-3) -0.69 eV/atom
Al2Se5 (1Al2Se5-1) -0.60 eV/atom
Al2Se4 (2AlSe2-1) -0.55 eV/atom
AlSe2 (1AlSe2-1) -0.55 eV/atom
Al2Se2 (2AlSe-4) -0.36 eV/atom
Al2Se4 (2AlSe2-2) -0.31 eV/atom
Al2Se2 (2AlSe-5) -0.14 eV/atom
AlSe4 (1AlSe4-1) -0.13 eV/atom
Se2 (2Se-1) 0.21 eV/atom
Se2 (2Se-2) 0.29 eV/atom
Bulk crystals from OQMD123
Al4Se6 -0.84 eV/atom
Al 0.00 eV/atom
Se3 0.00 eV/atom

A2B3/1Al2Se3/1/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -2.31

Cij (N/m) xx yy xy
xx 117.89 29.74 0.15
yy 29.38 118.25 0.12
xy -0.00 -0.00 82.47
Stiffness tensor eigenvalues
Eigenvalue 0 82.47 N/m
Eigenvalue 1 88.50 N/m
Eigenvalue 2 147.63 N/m

Key values [eV]
Band gap (PBE) 0.686
Direct band gap (PBE) 1.179
Valence band maximum wrt. vacuum (PBE) -6.100
Conduction band minimum wrt. vacuum (PBE) -5.414
DOS BZ

VBM
Property (VBM) Value
Min eff. mass 0.39 m0
Max eff. mass 0.39 m0
DOS eff. mass 0.39 m0
Crystal coordinates [-0.000, 0.000]
Warping parameter -0.000
Barrier height 47.6 meV
Distance to barrier 0.0156 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.14 m0
Max eff. mass 0.60 m0
DOS eff. mass 0.29 m0
Crystal coordinates [0.500, 0.000]
Warping parameter 0.004
Barrier height > 94.2 meV
Distance to barrier > 0.0195 Å-1

Atom No. Chemical symbol Charges [|e|]
0 Al 2.04
1 Se -1.34
2 Al 2.04
3 Se -1.41
4 Se -1.34

Miscellaneous details
Unique ID 1Al2Se3-1
Number of atoms 5
Number of species 2
Formula Al2Se3
Reduced formula Al2Se3
Stoichiometry A2B3
Unit cell area [Å2] 11.837
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree_LDP/A2B3/Al2Se3/Al2Se3-027653f98aa1
Old uid Al2Se3-7168020ae310
Space group (bulk in AA-stacking) P-3m1
Space group number (bulk in AA-stacking) 164
Point group -3m
Inversion symmetry Yes
Layer group number 72
Layer group p-3m1
2D Bravais type Hexagonal (hp)
Thickness [Å] 6.026
Structure origin Lyngby22_LDP
Miscellaneous details
Band gap (PBE) [eV] 0.686
Direct band gap (PBE) [eV] 1.179
gap_dir_nosoc 1.292
Vacuum level [eV] 2.793
Fermi level wrt. vacuum (PBE) [eV] -5.757
Valence band maximum wrt. vacuum (PBE) [eV] -6.100
Conduction band minimum wrt. vacuum (PBE) [eV] -5.414
minhessianeig -2.309
Dynamically stable No
Energy [eV] -21.856
Magnetic No
Total magnetic moment [μB] 0.000
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.070
Heat of formation [eV/atom] -0.786
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