Structure info
Layer group cm2m
Layer group number 35
Structure origin Wang23
Stability
Energy above convex hull [eV/atom] 0.088
Heat of formation [eV/atom] -0.768
Dynamically stable No
Basic properties
Magnetic No
Band gap (PBE) [eV] 1.476
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 3.776 0.789 0.000 Yes
2 1.166 3.627 0.000 Yes
3 -0.000 0.000 21.491 No
Lengths [Å] 3.858 3.810 21.491
Angles [°] 90.000 90.000 60.376

Symmetries
2D Bravais type Centered rectangular (oc)
Layer group number 35
Layer group cm2m
Space group number (bulk in AA-stacking) 38
Space group (bulk in AA-stacking) Amm2
Point group mm2
Inversion symmetry No
Structure data
Formula Al2Se3
Stoichiometry A2B3
Number of atoms 5
Unit cell area [Å2] 12.776
Thickness [Å] 6.490

Al2Se3 (1Al2Se3-2)
Heat of formation [eV/atom] -0.77
Energy above convex hull [eV/atom] 0.09
Monolayers from C2DB
Al8Se12 (4Al2Se3-1) -0.86 eV/atom
Al4Se6 (2Al2Se3-1) -0.84 eV/atom
Al4Se6 (2Al2Se3-2) -0.83 eV/atom
Al4Se6 (2Al2Se3-3) -0.81 eV/atom
Al2Se3 (1Al2Se3-1) -0.79 eV/atom
Al6Se9 (3Al2Se3-1) -0.77 eV/atom
Al2Se3, (1Al2Se3-2) -0.77 eV/atom
Al3Se4 (1Al3Se4-1) -0.72 eV/atom
Al2Se2 (2AlSe-1) -0.72 eV/atom
Al2Se2 (2AlSe-2) -0.71 eV/atom
Al2Se2 (2AlSe-3) -0.69 eV/atom
Al2Se5 (1Al2Se5-1) -0.60 eV/atom
Al2Se4 (2AlSe2-1) -0.55 eV/atom
AlSe2 (1AlSe2-1) -0.55 eV/atom
Al2Se2 (2AlSe-4) -0.36 eV/atom
Al2Se4 (2AlSe2-2) -0.31 eV/atom
Al2Se2 (2AlSe-5) -0.14 eV/atom
AlSe4 (1AlSe4-1) -0.13 eV/atom
Se2 (2Se-1) 0.21 eV/atom
Se2 (2Se-2) 0.29 eV/atom
Bulk crystals from OQMD123
Al4Se6 -0.84 eV/atom
Al 0.00 eV/atom
Se3 0.00 eV/atom

A2B3/1Al2Se3/2/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.05

Cij (N/m) xx yy xy
xx 79.15 21.75 -5.63
yy 22.06 90.70 10.91
xy -3.77 10.18 53.20
Stiffness tensor eigenvalues
Eigenvalue 0 46.30 N/m
Eigenvalue 1 68.60 N/m
Eigenvalue 2 108.15 N/m

Key values [eV]
Band gap (PBE) 1.476
Direct band gap (PBE) 1.476
Valence band maximum wrt. vacuum (PBE) -4.831
Conduction band minimum wrt. vacuum (PBE) -3.355
DOS BZ

Atom No. Chemical symbol Charges [|e|]
0 Al 2.06
1 Al 2.06
2 Se -1.38
3 Se -1.38
4 Se -1.35

Miscellaneous details
Unique ID 1Al2Se3-2
Number of atoms 5
Number of species 2
Formula Al2Se3
Reduced formula Al2Se3
Stoichiometry A2B3
Unit cell area [Å2] 12.776
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree_Wang23/A2B3/Al2Se3/Al2Se3-a7aa5e9e460c
Old uid Al2Se3-6a56e6838687
Space group (bulk in AA-stacking) Amm2
Space group number (bulk in AA-stacking) 38
Point group mm2
Inversion symmetry No
Layer group number 35
Layer group cm2m
2D Bravais type Centered rectangular (oc)
Thickness [Å] 6.490
Structure origin Wang23
Miscellaneous details
Band gap (PBE) [eV] 1.476
Direct band gap (PBE) [eV] 1.476
gap_dir_nosoc 1.493
Vacuum level [eV] 4.264
Fermi level wrt. vacuum (PBE) [eV] -4.093
Valence band maximum wrt. vacuum (PBE) [eV] -4.831
Conduction band minimum wrt. vacuum (PBE) [eV] -3.355
minhessianeig -0.050
Dynamically stable No
Energy [eV] -21.767
Magnetic No
Total magnetic moment [μB] 0.000
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.088
Heat of formation [eV/atom] -0.768
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