Structure info | |
---|---|
Layer group | cm2m |
Layer group number | 35 |
Structure origin | Wang23 |
Stability | |
---|---|
Energy above convex hull [eV/atom] | 0.088 |
Heat of formation [eV/atom] | -0.768 |
Dynamically stable | No |
Basic properties | |
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Magnetic | No |
Band gap (PBE) [eV] | 1.476 |
Symmetries | |
---|---|
2D Bravais type | Centered rectangular (oc) |
Layer group number | 35 |
Layer group | cm2m |
Space group number (bulk in AA-stacking) | 38 |
Space group (bulk in AA-stacking) | Amm2 |
Point group | mm2 |
Inversion symmetry | No |
Structure data | |
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Formula | Se3Al2 |
Stoichiometry | A2B3 |
Number of atoms | 5 |
Unit cell area [Å2] | 12.776 |
Thickness [Å] | 6.490 |
Al2Se3 (1Al2Se3-2) | |
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Heat of formation [eV/atom] | -0.77 |
Energy above convex hull [eV/atom] | 0.09 |
Monolayers from C2DB | |
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Al8Se12 (4Al2Se3-1) | -0.86 eV/atom |
Al4Se6 (2Al2Se3-1) | -0.84 eV/atom |
Al4Se6 (2Al2Se3-2) | -0.83 eV/atom |
Al4Se6 (2Al2Se3-3) | -0.81 eV/atom |
Al2Se3 (1Al2Se3-1) | -0.79 eV/atom |
Al6Se9 (3Al2Se3-1) | -0.77 eV/atom |
Al2Se3, (1Al2Se3-2) | -0.77 eV/atom |
Al3Se4 (1Al3Se4-1) | -0.72 eV/atom |
Al2Se2 (2AlSe-1) | -0.72 eV/atom |
Al2Se2 (2AlSe-2) | -0.71 eV/atom |
Al2Se2 (2AlSe-3) | -0.69 eV/atom |
Al2Se5 (1Al2Se5-1) | -0.60 eV/atom |
Al2Se4 (2AlSe2-1) | -0.55 eV/atom |
AlSe2 (1AlSe2-1) | -0.55 eV/atom |
Al2Se2 (2AlSe-4) | -0.36 eV/atom |
Al2Se4 (2AlSe2-2) | -0.31 eV/atom |
Al2Se2 (2AlSe-5) | -0.14 eV/atom |
AlSe4 (1AlSe4-1) | -0.13 eV/atom |
Se2 (2Se-1) | 0.21 eV/atom |
Se2 (2Se-2) | 0.29 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -0.05 |
Cij (N/m) | xx | yy | xy |
xx | 79.15 | 21.75 | -5.63 |
yy | 22.06 | 90.70 | 10.91 |
xy | -3.77 | 10.18 | 53.20 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 46.30 N/m |
Eigenvalue 1 | 68.60 N/m |
Eigenvalue 2 | 108.15 N/m |
Key values [eV] | |
---|---|
Band gap (PBE) | 1.476 |
Direct band gap (PBE) | 1.476 |
Valence band maximum wrt. vacuum (PBE) | -4.831 |
Conduction band minimum wrt. vacuum (PBE) | -3.355 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | Al | 2.06 |
1 | Al | 2.06 |
2 | Se | -1.38 |
3 | Se | -1.38 |
4 | Se | -1.35 |
Miscellaneous details | |
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Unique ID | 1Al2Se3-2 |
Number of atoms | 5 |
Number of species | 2 |
Formula | Se3Al2 |
Reduced formula | Se3Al2 |
Stoichiometry | A2B3 |
Unit cell area [Å2] | 12.776 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/tree_Wang23/A2B3/Al2Se3/Al2Se3-a7aa5e9e460c |
Old uid | Al2Se3-6a56e6838687 |
Space group (bulk in AA-stacking) | Amm2 |
Space group number (bulk in AA-stacking) | 38 |
Point group | mm2 |
Inversion symmetry | No |
Layer group number | 35 |
Layer group | cm2m |
2D Bravais type | Centered rectangular (oc) |
Thickness [Å] | 6.490 |
Structure origin | Wang23 |
Miscellaneous details | |
---|---|
Band gap (PBE) [eV] | 1.476 |
Direct band gap (PBE) [eV] | 1.476 |
gap_dir_nosoc | 1.493 |
Vacuum level [eV] | 4.264 |
Fermi level wrt. vacuum (PBE) [eV] | -4.093 |
Valence band maximum wrt. vacuum (PBE) [eV] | -4.831 |
Conduction band minimum wrt. vacuum (PBE) [eV] | -3.355 |
minhessianeig | -0.050 |
Dynamically stable | No |
Energy [eV] | -21.767 |
Magnetic | No |
Total magnetic moment [μB] | 0.000 |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Energy above convex hull [eV/atom] | 0.088 |
Heat of formation [eV/atom] | -0.768 |