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Structure info
Layer group p-3m1
Layer group number 72
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.145
Heat of formation [eV/atom] 0.083
Dynamically stable Yes
Basic properties
Magnetic No
Band gap (PBE) [eV] 0.000
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 3.868 0.000 0.000 Yes
2 -1.934 3.350 0.000 Yes
3 -0.000 0.000 18.468 No
Lengths [Å] 3.868 3.868 18.468
Angles [°] 90.000 90.000 120.000

Symmetries
2D Bravais type Hexagonal (hp)
Layer group number 72
Layer group p-3m1
Space group number (bulk in AA-stacking) 164
Space group (bulk in AA-stacking) P-3m1
Point group -3m
Inversion symmetry Yes
Structure data
Formula Te2Ge
Stoichiometry AB2
Number of atoms 3
Unit cell area [Å2] 12.958
Thickness [Å] 3.437

GeTe2 (1GeTe2-2)
Heat of formation [eV/atom] 0.08
Energy above convex hull [eV/atom] 0.15
Monolayers from C2DB
Te2Ge2 (2GeTe-1) -0.04 eV/atom
TeGe (1GeTe-1) -0.01 eV/atom
Te2Ge2 (2GeTe-2) -0.00 eV/atom
Te2Ge (1GeTe2-1) 0.07 eV/atom
Te2Ge, (1GeTe2-2) 0.08 eV/atom
Te4Ge2 (2GeTe2-1) 0.14 eV/atom
Te2 (2Te-1) 0.16 eV/atom
Te2Ge (1GeTe2-3) 0.20 eV/atom
Te4Ge2 (2GeTe2-2) 0.27 eV/atom
Te2 (2Te-2) 0.29 eV/atom
Te2Ge2 (2GeTe-3) 0.38 eV/atom
Ge2 (2Ge-1) 0.48 eV/atom
Ge2 (2Ge-2) 0.49 eV/atom
Bulk crystals from OQMD123
TeGe -0.09 eV/atom
Ge2 0.00 eV/atom
Te3 0.00 eV/atom

materials/AB2/1GeTe2/2/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

Cij (N/m) xx yy xy
xx 38.78 34.70 -0.15
yy 34.49 38.85 -0.25
xy 0.00 0.00 2.16
Stiffness tensor eigenvalues
Eigenvalue 0 2.16 N/m
Eigenvalue 1 4.22 N/m
Eigenvalue 2 73.42 N/m

Key values [eV]
Band gap (PBE) 0.000
Direct band gap (PBE) 0.000
Fermi level wrt. vacuum (PBE) -4.942
DOS BZ

materials/AB2/1GeTe2/2/fermi_surface.png

Atom No. Chemical symbol Charges [|e|]
0 Ge 0.42
1 Te -0.21
2 Te -0.21

materials/AB2/1GeTe2/2/rpa-pol-x.png materials/AB2/1GeTe2/2/rpa-pol-z.png
materials/AB2/1GeTe2/2/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 44.641
Interband polarizability (y) [Å] 44.641
Interband polarizability (z) [Å] 0.467
Plasma frequency (x) [eV Å0.5] 9.895
Plasma frequency (y) [eV Å0.5] 9.895

materials/AB2/1GeTe2/2/Raman.png
Mode Frequency (1/cm) Degeneracy
Mode 1 0. 3
Mode 2 78.3 2
Mode 3 112.7 2
Mode 4 129.5 1
Mode 5 163.9 1

Miscellaneous details
Unique ID 1GeTe2-2
Number of atoms 3
Number of species 2
Formula Te2Ge
Reduced formula Te2Ge
Stoichiometry AB2
Unit cell area [Å2] 12.958
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB2/GeTe2/GeTe2-95b3de316153
Old uid GeTe2-95b3de316153
Space group (bulk in AA-stacking) P-3m1
Space group number (bulk in AA-stacking) 164
Point group -3m
Inversion symmetry Yes
Layer group number 72
Layer group p-3m1
2D Bravais type Hexagonal (hp)
Thickness [Å] 3.437
Structure origin original03-18
Band gap (PBE) [eV] 0.000
Miscellaneous details
Direct band gap (PBE) [eV] 0.000
gap_dir_nosoc 0.000
Vacuum level [eV] 3.879
Fermi level wrt. vacuum (PBE) [eV] -4.942
minhessianeig -0.000
Dynamically stable Yes
Interband polarizability (x) [Å] 44.641
Interband polarizability (y) [Å] 44.641
Interband polarizability (z) [Å] 0.467
Plasma frequency (x) [eV Å0.5] 9.895
Plasma frequency (y) [eV Å0.5] 9.895
Energy [eV] -10.677
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.145
Heat of formation [eV/atom] 0.083
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