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Structure info
Layer group p-6m2
Layer group number 78
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.261
Heat of formation [eV/atom] 0.198
Dynamically stable No
Basic properties
Magnetic No
Band gap (PBE) [eV] 0.000
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 3.606 -0.000 0.000 Yes
2 -1.803 3.123 0.000 Yes
3 -0.000 0.000 19.177 No
Lengths [Å] 3.606 3.606 19.177
Angles [°] 90.000 90.000 120.000

Symmetries
2D Bravais type Hexagonal (hp)
Layer group number 78
Layer group p-6m2
Space group number (bulk in AA-stacking) 187
Space group (bulk in AA-stacking) P-6m2
Point group -6m2
Inversion symmetry No
Structure data
Formula Te2Ge
Stoichiometry AB2
Number of atoms 3
Unit cell area [Å2] 11.264
Thickness [Å] 4.071

GeTe2 (1GeTe2-3)
Heat of formation [eV/atom] 0.20
Energy above convex hull [eV/atom] 0.26
Monolayers from C2DB
Te2Ge2 (2GeTe-1) -0.04 eV/atom
TeGe (1GeTe-1) -0.01 eV/atom
Te2Ge2 (2GeTe-2) -0.00 eV/atom
Te2Ge (1GeTe2-1) 0.07 eV/atom
Te2Ge (1GeTe2-2) 0.08 eV/atom
Te4Ge2 (2GeTe2-1) 0.14 eV/atom
Te2 (2Te-1) 0.16 eV/atom
Te2Ge, (1GeTe2-3) 0.20 eV/atom
Te4Ge2 (2GeTe2-2) 0.27 eV/atom
Te2 (2Te-2) 0.29 eV/atom
Te2Ge2 (2GeTe-3) 0.38 eV/atom
Ge2 (2Ge-1) 0.48 eV/atom
Ge2 (2Ge-2) 0.49 eV/atom
Bulk crystals from OQMD123
TeGe -0.09 eV/atom
Ge2 0.00 eV/atom
Te3 0.00 eV/atom

materials/AB2/1GeTe2/3/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.24

Cij (N/m) xx yy xy
xx 49.89 34.87 -0.27
yy 34.88 49.67 -0.22
xy 0.00 0.00 14.05
Stiffness tensor eigenvalues
Eigenvalue 0 14.05 N/m
Eigenvalue 1 14.90 N/m
Eigenvalue 2 84.66 N/m

Key values [eV]
Band gap (PBE) 0.000
Direct band gap (PBE) 0.000
Fermi level wrt. vacuum (PBE) -4.861
DOS BZ

materials/AB2/1GeTe2/3/fermi_surface.png

Atom No. Chemical symbol Charges [|e|]
0 Ge 0.33
1 Te -0.17
2 Te -0.17

materials/AB2/1GeTe2/3/rpa-pol-x.png materials/AB2/1GeTe2/3/rpa-pol-z.png
materials/AB2/1GeTe2/3/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 13.315
Interband polarizability (y) [Å] 13.315
Interband polarizability (z) [Å] 0.528
Plasma frequency (x) [eV Å0.5] 14.203
Plasma frequency (y) [eV Å0.5] 14.203

materials/AB2/1GeTe2/3/Raman.png
Mode Frequency (1/cm) Degeneracy
Mode 1 0.1 3
Mode 2 61.1 2
Mode 3 106. 4

Miscellaneous details
Unique ID 1GeTe2-3
Number of atoms 3
Number of species 2
Formula Te2Ge
Reduced formula Te2Ge
Stoichiometry AB2
Unit cell area [Å2] 11.264
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB2/GeTe2/GeTe2-f22718f3be0b
Old uid GeTe2-f22718f3be0b
Space group (bulk in AA-stacking) P-6m2
Space group number (bulk in AA-stacking) 187
Point group -6m2
Inversion symmetry No
Layer group number 78
Layer group p-6m2
2D Bravais type Hexagonal (hp)
Thickness [Å] 4.071
Structure origin original03-18
Band gap (PBE) [eV] 0.000
Miscellaneous details
Direct band gap (PBE) [eV] 0.000
gap_dir_nosoc 0.000
Vacuum level [eV] 4.290
Fermi level wrt. vacuum (PBE) [eV] -4.861
minhessianeig -0.242
Dynamically stable No
Interband polarizability (x) [Å] 13.315
Interband polarizability (y) [Å] 13.315
Interband polarizability (z) [Å] 0.528
Plasma frequency (x) [eV Å0.5] 14.203
Plasma frequency (y) [eV Å0.5] 14.203
Energy [eV] -10.330
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.261
Heat of formation [eV/atom] 0.198
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