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Structure info
Layer group p3m1
Layer group number 69
Structure origin adhoc_material
Stability
Energy above convex hull [eV/atom] 0.008
Heat of formation [eV/atom] -0.526
Dynamically stable Yes
Basic properties
Magnetic No
Ferroelectric Yes
Band gap (PBE) [eV] 0.754
Band gap (HSE06) [eV] 1.432
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 4.096 -0.000 0.000 Yes
2 -2.048 3.547 0.000 Yes
3 0.000 0.000 36.367 No
Lengths [Å] 4.096 4.096 36.367
Angles [°] 90.000 90.000 120.004

Symmetries
2D Bravais type Hexagonal (hp)
Layer group number 69
Layer group p3m1
Space group number (bulk in AA-stacking) 156
Space group (bulk in AA-stacking) P3m1
Point group 3m
Inversion symmetry No
Structure data
Formula In2Se3
Stoichiometry A2B3
Number of atoms 5
Unit cell area [Å2] 14.528
Thickness [Å] 6.786

In2Se3 (1In2Se3-1)
Heat of formation [eV/atom] -0.53
Energy above convex hull [eV/atom] 0.01
Monolayers from C2DB
In2Se2 (2InSe-1) -0.54 eV/atom
In2Se2 (2InSe-2) -0.53 eV/atom
In4Se6 (2In2Se3-1) -0.53 eV/atom
In2Se3, (1In2Se3-1) -0.53 eV/atom
In8Se12 (4In2Se3-1) -0.51 eV/atom
In3Se4 (1In3Se4-1) -0.51 eV/atom
In2Se2 (2InSe-3) -0.50 eV/atom
In2Se3 (1In2Se3-2) -0.50 eV/atom
Se12In13 (1Se12In13-1) -0.49 eV/atom
In2Se3 (1In2Se3-3) -0.48 eV/atom
Se12In14 (2Se6In7-1) -0.44 eV/atom
Se12In15 (3Se4In5-1) -0.42 eV/atom
In2Se2 (2InSe-4) -0.39 eV/atom
In2Se5 (1In2Se5-1) -0.36 eV/atom
In2Se2 (2InSe-5) -0.29 eV/atom
In2Se2 (2InSe-6) -0.23 eV/atom
In2Se4 (2InSe2-1) -0.22 eV/atom
InSe2 (1InSe2-1) -0.21 eV/atom
In2Se3 (1In2Se3-4) -0.16 eV/atom
In2Se4 (2InSe2-2) -0.16 eV/atom
In2Se4 (2InSe2-3) -0.11 eV/atom
In2Se4 (2InSe2-4) -0.04 eV/atom
InSe4 (1InSe4-1) 0.04 eV/atom
Se2 (2Se-1) 0.21 eV/atom
Se2 (2Se-2) 0.29 eV/atom
Bulk crystals from OQMD123
In4Se4 -0.53 eV/atom
In12Se18 -0.53 eV/atom
In 0.00 eV/atom
Se3 0.00 eV/atom

A2B3/1In2Se3/1/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

DVB [eV] xx yy xy
Γ -4.03 -4.07 -0.00
Y -4.46 1.54 0.08
H -4.03 -4.07 -0.00
C -0.02 -2.88 -2.72
H1 -4.03 -4.07 -0.00
X 0.10 -3.00 2.77
kVBM -4.03 -4.07 -0.00
xx yy xy
Band gap [eV] -0.67 -0.65 -0.03
DCB [eV] xx yy xy
Γ -4.71 -4.72 -0.03
Y -5.75 3.29 0.10
H -4.71 -4.72 -0.03
C 1.37 -3.51 -3.06
H1 -4.70 -4.72 -0.03
X 1.00 -3.22 2.88
kCBM -4.70 -4.72 -0.03

Cij (N/m) xx yy xy
xx 63.16 24.82 0.24
yy 25.01 63.62 -0.41
xy 0.72 -0.62 42.29
Stiffness tensor eigenvalues
Eigenvalue 0 38.36 N/m
Eigenvalue 1 42.40 N/m
Eigenvalue 2 88.30 N/m

cij [e/Å] xx yy xy
x 0.02 -0.03 -0.13
y -0.15 0.15 -0.01
z -0.00 -0.00 -0.00
cijclamped [e/Å] xx yy xy
x 0.00 -0.00 -0.16
y -0.16 0.16 0.00
z 0.01 0.01 0.00

Key values [eV]
Band gap (PBE) 0.754
Direct band gap (PBE) 0.754
Valence band maximum wrt. vacuum (PBE) -5.736
Conduction band minimum wrt. vacuum (PBE) -4.982
DOS BZ

Key values [eV]
Band gap (HSE06) 1.432
Direct band gap (HSE06) 1.432
Valence band maximum wrt. vacuum (HSE06) -6.265
Conduction band minimum wrt. vacuum (HSE06) -4.833

VBM
Property (VBM) Value
Min eff. mass 0.52 m0
Max eff. mass 1.20 m0
DOS eff. mass 0.77 m0
Crystal coordinates [0.001, -0.000]
Warping parameter -0.007
Barrier height 37.6 meV
Distance to barrier 0.0164 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.17 m0
Max eff. mass
DOS eff. mass
Crystal coordinates [-0.000, 0.001]
Warping parameter 0.003
Barrier height > 193.3 meV
Distance to barrier > 0.0176 Å-1

ZInij ux uy uz
Px 4.03 0.00 0.01
Py 0.00 4.04 -0.01
Pz -0.00 0.00 0.35
ZInij ux uy uz
Px 2.76 0.00 -0.00
Py 0.00 2.76 0.01
Pz 0.00 -0.00 0.39
ZSeij ux uy uz
Px -2.53 0.00 0.00
Py 0.00 -2.53 -0.00
Pz 0.00 -0.00 -0.22
ZSeij ux uy uz
Px -2.55 0.00 0.00
Py 0.00 -2.54 -0.00
Pz 0.00 -0.00 -0.18
ZSeij ux uy uz
Px -1.71 -0.01 -0.01
Py -0.01 -1.74 0.01
Pz -0.00 0.00 -0.34

Atom No. Chemical symbol Charges [|e|]
0 In 1.08
1 Se -0.64
2 In 0.96
3 Se -0.73
4 Se -0.68

Spontaneous polarization vector component [pC/m]
Px 0
Py 0
Pz -16.091

A2B3/1In2Se3/1/rpa-pol-x.png A2B3/1In2Se3/1/rpa-pol-z.png
A2B3/1In2Se3/1/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 5.577
Interband polarizability (y) [Å] 5.552
Interband polarizability (z) [Å] 0.660

A2B3/1In2Se3/1/ir-pol-x.png A2B3/1In2Se3/1/ir-pol-z.png
A2B3/1In2Se3/1/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 5.70
Phonons only (y) 5.54
Phonons only (z) 0.03
Total (phonons + electrons) (x) 11.28
Total (phonons + electrons) (y) 11.09
Total (phonons + electrons) (z) 0.69

Shift-current Shift-current Shift-current Shift-current Shift-current Shift-current
Shift-current Shift-current Shift-current Shift-current Shift-current
Element Relations
xxx
xxz xxz=xzx
xyx xyx=yxx=xxy
xyy xyy=yxy=yyx
xyz xyz=xzy=yxz=yzx
yyy
yyz yyz=yzy
Others 0=xzz=yzz=zxz=zyz=zzx=zzy
zxx
zxy zxy=zyx
zyy
zzz

Miscellaneous details
Unique ID 1In2Se3-1
Number of atoms 5
Number of species 2
Formula In2Se3
Reduced formula In2Se3
Stoichiometry A2B3
Unit cell area [Å2] 14.528
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/adhoc_materials/In2Se3_1
Old uid In2Se3-1f1215531144
Space group (bulk in AA-stacking) P3m1
Space group number (bulk in AA-stacking) 156
Point group 3m
Inversion symmetry No
Layer group number 69
Layer group p3m1
2D Bravais type Hexagonal (hp)
Thickness [Å] 6.786
Structure origin adhoc_material
Band gap (PBE) [eV] 0.754
Direct band gap (PBE) [eV] 0.754
gap_dir_nosoc 0.875
Vacuum level [eV] 2.686
Fermi level wrt. vacuum (PBE) [eV] -5.359
Valence band maximum wrt. vacuum (PBE) [eV] -5.736
Conduction band minimum wrt. vacuum (PBE) [eV] -4.982
minhessianeig -0.000
Miscellaneous details
Dynamically stable Yes
Band gap (HSE06) [eV] 1.432
Direct band gap (HSE06) [eV] 1.432
Fermi level wrt. vacuum (HSE) [eV] -5.549
Valence band maximum wrt. vacuum (HSE06) [eV] -6.265
Conduction band minimum wrt. vacuum (HSE06) [eV] -4.833
Interband polarizability (x) [Å] 5.577
Interband polarizability (y) [Å] 5.552
Interband polarizability (z) [Å] 0.660
Static polarizability (phonons) (x) [Å] 5.704
Static polarizability (phonons + electrons) (x) [Å] 11.281
Static polarizability (phonons) (y) [Å] 5.540
Static polarizability (phonons + electrons) (y) [Å] 11.093
Static polarizability (phonons) (z) [Å] 0.027
Static polarizability (phonons + electrons) (z) [Å] 0.687
Energy [eV] -18.604
Magnetic No
Total magnetic moment [μB] 0.000
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Ferroelectric Yes
Spontaneous polarization [pC/m] 16.091
Energy above convex hull [eV/atom] 0.008
Heat of formation [eV/atom] -0.526
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