Structure info | |
---|---|
Layer group | p3m1 |
Layer group number | 69 |
Structure origin | adhoc_material |
Stability | |
---|---|
Energy above convex hull [eV/atom] | 0.008 |
Heat of formation [eV/atom] | -0.526 |
Dynamically stable | Yes |
Basic properties | |
---|---|
Magnetic | No |
Ferroelectric | Yes |
Band gap (PBE) [eV] | 0.754 |
Band gap (HSE06) [eV] | 1.432 |
Symmetries | |
---|---|
2D Bravais type | Hexagonal (hp) |
Layer group number | 69 |
Layer group | p3m1 |
Space group number (bulk in AA-stacking) | 156 |
Space group (bulk in AA-stacking) | P3m1 |
Point group | 3m |
Inversion symmetry | No |
Structure data | |
---|---|
Formula | In2Se3 |
Stoichiometry | A2B3 |
Number of atoms | 5 |
Unit cell area [Å2] | 14.528 |
Thickness [Å] | 6.786 |
In2Se3 (1In2Se3-1) | |
---|---|
Heat of formation [eV/atom] | -0.53 |
Energy above convex hull [eV/atom] | 0.01 |
Monolayers from C2DB | |
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In2Se2 (2InSe-1) | -0.54 eV/atom |
In2Se2 (2InSe-2) | -0.53 eV/atom |
In4Se6 (2In2Se3-1) | -0.53 eV/atom |
In2Se3, (1In2Se3-1) | -0.53 eV/atom |
In8Se12 (4In2Se3-1) | -0.51 eV/atom |
In3Se4 (1In3Se4-1) | -0.51 eV/atom |
In2Se2 (2InSe-3) | -0.50 eV/atom |
In2Se3 (1In2Se3-2) | -0.50 eV/atom |
Se12In13 (1Se12In13-1) | -0.49 eV/atom |
In2Se3 (1In2Se3-3) | -0.48 eV/atom |
Se12In14 (2Se6In7-1) | -0.44 eV/atom |
Se12In15 (3Se4In5-1) | -0.42 eV/atom |
In2Se2 (2InSe-4) | -0.39 eV/atom |
In2Se5 (1In2Se5-1) | -0.36 eV/atom |
In2Se2 (2InSe-5) | -0.29 eV/atom |
In2Se2 (2InSe-6) | -0.23 eV/atom |
In2Se4 (2InSe2-1) | -0.22 eV/atom |
InSe2 (1InSe2-1) | -0.21 eV/atom |
In2Se3 (1In2Se3-4) | -0.16 eV/atom |
In2Se4 (2InSe2-2) | -0.16 eV/atom |
In2Se4 (2InSe2-3) | -0.11 eV/atom |
In2Se4 (2InSe2-4) | -0.04 eV/atom |
InSe4 (1InSe4-1) | 0.04 eV/atom |
Se2 (2Se-1) | 0.21 eV/atom |
Se2 (2Se-2) | 0.29 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -0.00 |
DVB [eV] | xx | yy | xy |
Γ | -4.03 | -4.07 | -0.00 |
Y | -4.46 | 1.54 | 0.08 |
H | -4.03 | -4.07 | -0.00 |
C | -0.02 | -2.88 | -2.72 |
H1 | -4.03 | -4.07 | -0.00 |
X | 0.10 | -3.00 | 2.77 |
kVBM | -4.03 | -4.07 | -0.00 |
xx | yy | xy | |
Band gap [eV] | -0.67 | -0.65 | -0.03 |
DCB [eV] | xx | yy | xy |
Γ | -4.71 | -4.72 | -0.03 |
Y | -5.75 | 3.29 | 0.10 |
H | -4.71 | -4.72 | -0.03 |
C | 1.37 | -3.51 | -3.06 |
H1 | -4.70 | -4.72 | -0.03 |
X | 1.00 | -3.22 | 2.88 |
kCBM | -4.70 | -4.72 | -0.03 |
Cij (N/m) | xx | yy | xy |
xx | 63.16 | 24.82 | 0.24 |
yy | 25.01 | 63.62 | -0.41 |
xy | 0.72 | -0.62 | 42.29 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 38.36 N/m |
Eigenvalue 1 | 42.40 N/m |
Eigenvalue 2 | 88.30 N/m |
cij [e/Å] | xx | yy | xy |
x | 0.02 | -0.03 | -0.13 |
y | -0.15 | 0.15 | -0.01 |
z | -0.00 | -0.00 | -0.00 |
cijclamped [e/Å] | xx | yy | xy |
x | 0.00 | -0.00 | -0.16 |
y | -0.16 | 0.16 | 0.00 |
z | 0.01 | 0.01 | 0.00 |
Key values [eV] | |
---|---|
Band gap (PBE) | 0.754 |
Direct band gap (PBE) | 0.754 |
Valence band maximum wrt. vacuum (PBE) | -5.736 |
Conduction band minimum wrt. vacuum (PBE) | -4.982 |
Key values [eV] | |
---|---|
Band gap (HSE06) | 1.432 |
Direct band gap (HSE06) | 1.432 |
Valence band maximum wrt. vacuum (HSE06) | -6.265 |
Conduction band minimum wrt. vacuum (HSE06) | -4.833 |
Property (VBM) | Value |
---|---|
Min eff. mass | 0.52 m0 |
Max eff. mass | 1.20 m0 |
DOS eff. mass | 0.77 m0 |
Crystal coordinates | [0.001, -0.000] |
Warping parameter | -0.007 |
Barrier height | 37.6 meV |
Distance to barrier | 0.0164 Å-1 |
Property (CBM) | Value |
---|---|
Min eff. mass | 0.17 m0 |
Max eff. mass | ∞ |
DOS eff. mass | ∞ |
Crystal coordinates | [-0.000, 0.001] |
Warping parameter | 0.003 |
Barrier height | > 193.3 meV |
Distance to barrier | > 0.0176 Å-1 |
ZInij | ux | uy | uz |
Px | 4.03 | 0.00 | 0.01 |
Py | 0.00 | 4.04 | -0.01 |
Pz | -0.00 | 0.00 | 0.35 |
ZInij | ux | uy | uz |
Px | 2.76 | 0.00 | -0.00 |
Py | 0.00 | 2.76 | 0.01 |
Pz | 0.00 | -0.00 | 0.39 |
ZSeij | ux | uy | uz |
Px | -2.53 | 0.00 | 0.00 |
Py | 0.00 | -2.53 | -0.00 |
Pz | 0.00 | -0.00 | -0.22 |
ZSeij | ux | uy | uz |
Px | -2.55 | 0.00 | 0.00 |
Py | 0.00 | -2.54 | -0.00 |
Pz | 0.00 | -0.00 | -0.18 |
ZSeij | ux | uy | uz |
Px | -1.71 | -0.01 | -0.01 |
Py | -0.01 | -1.74 | 0.01 |
Pz | -0.00 | 0.00 | -0.34 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | In | 1.08 |
1 | Se | -0.64 |
2 | In | 0.96 |
3 | Se | -0.73 |
4 | Se | -0.68 |
Spontaneous polarization vector component [pC/m] | |
---|---|
Px | 0 |
Py | 0 |
Pz | -16.091 |
Properties | |
---|---|
Interband polarizability (x) [Å] | 5.577 |
Interband polarizability (y) [Å] | 5.552 |
Interband polarizability (z) [Å] | 0.660 |
Static polarizability [Å] | |
---|---|
Phonons only (x) | 5.70 |
Phonons only (y) | 5.54 |
Phonons only (z) | 0.03 |
Total (phonons + electrons) (x) | 11.28 |
Total (phonons + electrons) (y) | 11.09 |
Total (phonons + electrons) (z) | 0.69 |
Element | Relations |
---|---|
xxx | |
xxz | xxz=xzx |
xyx | xyx=yxx=xxy |
xyy | xyy=yxy=yyx |
xyz | xyz=xzy=yxz=yzx |
yyy | |
yyz | yyz=yzy |
Others | 0=xzz=yzz=zxz=zyz=zzx=zzy |
zxx | |
zxy | zxy=zyx |
zyy | |
zzz |
Miscellaneous details | |
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Unique ID | 1In2Se3-1 |
Number of atoms | 5 |
Number of species | 2 |
Formula | In2Se3 |
Reduced formula | In2Se3 |
Stoichiometry | A2B3 |
Unit cell area [Å2] | 14.528 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/adhoc_materials/In2Se3_1 |
Old uid | In2Se3-1f1215531144 |
Space group (bulk in AA-stacking) | P3m1 |
Space group number (bulk in AA-stacking) | 156 |
Point group | 3m |
Inversion symmetry | No |
Layer group number | 69 |
Layer group | p3m1 |
2D Bravais type | Hexagonal (hp) |
Thickness [Å] | 6.786 |
Structure origin | adhoc_material |
Band gap (PBE) [eV] | 0.754 |
Direct band gap (PBE) [eV] | 0.754 |
gap_dir_nosoc | 0.875 |
Vacuum level [eV] | 2.686 |
Fermi level wrt. vacuum (PBE) [eV] | -5.359 |
Valence band maximum wrt. vacuum (PBE) [eV] | -5.736 |
Conduction band minimum wrt. vacuum (PBE) [eV] | -4.982 |
minhessianeig | -0.000 |
Miscellaneous details | |
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Dynamically stable | Yes |
Band gap (HSE06) [eV] | 1.432 |
Direct band gap (HSE06) [eV] | 1.432 |
Fermi level wrt. vacuum (HSE) [eV] | -5.549 |
Valence band maximum wrt. vacuum (HSE06) [eV] | -6.265 |
Conduction band minimum wrt. vacuum (HSE06) [eV] | -4.833 |
Interband polarizability (x) [Å] | 5.577 |
Interband polarizability (y) [Å] | 5.552 |
Interband polarizability (z) [Å] | 0.660 |
Static polarizability (phonons) (x) [Å] | 5.704 |
Static polarizability (phonons + electrons) (x) [Å] | 11.281 |
Static polarizability (phonons) (y) [Å] | 5.540 |
Static polarizability (phonons + electrons) (y) [Å] | 11.093 |
Static polarizability (phonons) (z) [Å] | 0.027 |
Static polarizability (phonons + electrons) (z) [Å] | 0.687 |
Energy [eV] | -18.604 |
Magnetic | No |
Total magnetic moment [μB] | 0.000 |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Ferroelectric | Yes |
Spontaneous polarization [pC/m] | 16.091 |
Energy above convex hull [eV/atom] | 0.008 |
Heat of formation [eV/atom] | -0.526 |