Structure info | |
---|---|
Layer group | p-4m2 |
Layer group number | 59 |
Structure origin | original03-18 |
Stability | |
---|---|
Energy above convex hull [eV/atom] | 0.236 |
Heat of formation [eV/atom] | -0.209 |
Dynamically stable | No |
Basic properties | |
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Magnetic | No |
Band gap (PBE) [eV] | 0.000 |
Symmetries | |
---|---|
2D Bravais type | Square (tp) |
Layer group number | 59 |
Layer group | p-4m2 |
Space group number (bulk in AA-stacking) | 115 |
Space group (bulk in AA-stacking) | P-4m2 |
Point group | -42m |
Inversion symmetry | No |
Structure data | |
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Formula | InSe2 |
Stoichiometry | AB2 |
Number of atoms | 3 |
Unit cell area [Å2] | 14.504 |
Thickness [Å] | 3.521 |
InSe2 (1InSe2-1) | |
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Heat of formation [eV/atom] | -0.21 |
Energy above convex hull [eV/atom] | 0.24 |
Monolayers from C2DB | |
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In2Se2 (2InSe-1) | -0.54 eV/atom |
In2Se2 (2InSe-2) | -0.53 eV/atom |
In4Se6 (2In2Se3-1) | -0.53 eV/atom |
In2Se3 (1In2Se3-1) | -0.53 eV/atom |
In8Se12 (4In2Se3-1) | -0.51 eV/atom |
In3Se4 (1In3Se4-1) | -0.51 eV/atom |
In2Se2 (2InSe-3) | -0.50 eV/atom |
In2Se3 (1In2Se3-2) | -0.50 eV/atom |
Se12In13 (1Se12In13-1) | -0.49 eV/atom |
In2Se3 (1In2Se3-3) | -0.48 eV/atom |
Se12In14 (2Se6In7-1) | -0.44 eV/atom |
Se12In15 (3Se4In5-1) | -0.42 eV/atom |
In2Se2 (2InSe-4) | -0.39 eV/atom |
In2Se5 (1In2Se5-1) | -0.36 eV/atom |
In2Se2 (2InSe-5) | -0.29 eV/atom |
In2Se2 (2InSe-6) | -0.23 eV/atom |
In2Se4 (2InSe2-1) | -0.22 eV/atom |
InSe2, (1InSe2-1) | -0.21 eV/atom |
In2Se3 (1In2Se3-4) | -0.16 eV/atom |
In2Se4 (2InSe2-2) | -0.16 eV/atom |
In2Se4 (2InSe2-3) | -0.11 eV/atom |
In2Se4 (2InSe2-4) | -0.04 eV/atom |
InSe4 (1InSe4-1) | 0.04 eV/atom |
Se2 (2Se-1) | 0.21 eV/atom |
Se2 (2Se-2) | 0.29 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -1.31 |
Cij (N/m) | xx | yy | xy |
xx | 25.33 | 4.70 | -0.00 |
yy | 4.70 | 25.33 | -0.00 |
xy | 0.00 | 0.00 | 6.07 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 6.07 N/m |
Eigenvalue 1 | 20.63 N/m |
Eigenvalue 2 | 30.03 N/m |
Key values [eV] | |
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Band gap (PBE) | 0.000 |
Direct band gap (PBE) | 0.000 |
Fermi level wrt. vacuum (PBE) | -5.995 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | In | 0.96 |
1 | Se | -0.48 |
2 | Se | -0.48 |
Properties | |
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Interband polarizability (x) [Å] | 6.907 |
Interband polarizability (y) [Å] | 6.841 |
Interband polarizability (z) [Å] | 0.413 |
Plasma frequency (x) [eV Å0.5] | 6.770 |
Plasma frequency (y) [eV Å0.5] | 6.777 |
Miscellaneous details | |
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Unique ID | 1InSe2-1 |
Number of atoms | 3 |
Number of species | 2 |
Formula | InSe2 |
Reduced formula | InSe2 |
Stoichiometry | AB2 |
Unit cell area [Å2] | 14.504 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/tree/AB2/InSe2/InSe2-47382673eb36 |
Old uid | InSe2-47382673eb36 |
Space group (bulk in AA-stacking) | P-4m2 |
Space group number (bulk in AA-stacking) | 115 |
Point group | -42m |
Inversion symmetry | No |
Layer group number | 59 |
Layer group | p-4m2 |
2D Bravais type | Square (tp) |
Thickness [Å] | 3.521 |
Structure origin | original03-18 |
Band gap (PBE) [eV] | 0.000 |
Miscellaneous details | |
---|---|
Direct band gap (PBE) [eV] | 0.000 |
gap_dir_nosoc | 0.000 |
Vacuum level [eV] | 3.060 |
Fermi level wrt. vacuum (PBE) [eV] | -5.995 |
minhessianeig | -1.314 |
Dynamically stable | No |
Interband polarizability (x) [Å] | 6.907 |
Interband polarizability (y) [Å] | 6.841 |
Interband polarizability (z) [Å] | 0.413 |
Plasma frequency (x) [eV Å0.5] | 6.770 |
Plasma frequency (y) [eV Å0.5] | 6.777 |
Energy [eV] | -10.355 |
Magnetic | No |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Energy above convex hull [eV/atom] | 0.236 |
Heat of formation [eV/atom] | -0.209 |