Structure info
Layer group p-4m2
Layer group number 59
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.236
Heat of formation [eV/atom] -0.209
Dynamically stable No
Basic properties
Magnetic No
Band gap (PBE) [eV] 0.000
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 3.808 -0.000 0.000 Yes
2 0.000 3.808 0.000 Yes
3 0.000 0.000 18.705 No
Lengths [Å] 3.808 3.808 18.705
Angles [°] 90.000 90.000 90.000

Symmetries
2D Bravais type Square (tp)
Layer group number 59
Layer group p-4m2
Space group number (bulk in AA-stacking) 115
Space group (bulk in AA-stacking) P-4m2
Point group -42m
Inversion symmetry No
Structure data
Formula InSe2
Stoichiometry AB2
Number of atoms 3
Unit cell area [Å2] 14.504
Thickness [Å] 3.521

InSe2 (1InSe2-1)
Heat of formation [eV/atom] -0.21
Energy above convex hull [eV/atom] 0.24
Monolayers from C2DB
In2Se2 (2InSe-1) -0.54 eV/atom
In2Se2 (2InSe-2) -0.53 eV/atom
In4Se6 (2In2Se3-1) -0.53 eV/atom
In2Se3 (1In2Se3-1) -0.53 eV/atom
In8Se12 (4In2Se3-1) -0.51 eV/atom
In3Se4 (1In3Se4-1) -0.51 eV/atom
In2Se2 (2InSe-3) -0.50 eV/atom
In2Se3 (1In2Se3-2) -0.50 eV/atom
Se12In13 (1Se12In13-1) -0.49 eV/atom
In2Se3 (1In2Se3-3) -0.48 eV/atom
Se12In14 (2Se6In7-1) -0.44 eV/atom
Se12In15 (3Se4In5-1) -0.42 eV/atom
In2Se2 (2InSe-4) -0.39 eV/atom
In2Se5 (1In2Se5-1) -0.36 eV/atom
In2Se2 (2InSe-5) -0.29 eV/atom
In2Se2 (2InSe-6) -0.23 eV/atom
In2Se4 (2InSe2-1) -0.22 eV/atom
InSe2, (1InSe2-1) -0.21 eV/atom
In2Se3 (1In2Se3-4) -0.16 eV/atom
In2Se4 (2InSe2-2) -0.16 eV/atom
In2Se4 (2InSe2-3) -0.11 eV/atom
In2Se4 (2InSe2-4) -0.04 eV/atom
InSe4 (1InSe4-1) 0.04 eV/atom
Se2 (2Se-1) 0.21 eV/atom
Se2 (2Se-2) 0.29 eV/atom
Bulk crystals from OQMD123
In4Se4 -0.53 eV/atom
In12Se18 -0.53 eV/atom
In 0.00 eV/atom
Se3 0.00 eV/atom

AB2/1InSe2/1/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -1.31

Cij (N/m) xx yy xy
xx 25.33 4.70 -0.00
yy 4.70 25.33 -0.00
xy 0.00 0.00 6.07
Stiffness tensor eigenvalues
Eigenvalue 0 6.07 N/m
Eigenvalue 1 20.63 N/m
Eigenvalue 2 30.03 N/m

Key values [eV]
Band gap (PBE) 0.000
Direct band gap (PBE) 0.000
Fermi level wrt. vacuum (PBE) -5.995
DOS BZ

AB2/1InSe2/1/fermi_surface.png

Atom No. Chemical symbol Charges [|e|]
0 In 0.96
1 Se -0.48
2 Se -0.48

AB2/1InSe2/1/rpa-pol-x.png AB2/1InSe2/1/rpa-pol-z.png
AB2/1InSe2/1/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 6.907
Interband polarizability (y) [Å] 6.841
Interband polarizability (z) [Å] 0.413
Plasma frequency (x) [eV Å0.5] 6.770
Plasma frequency (y) [eV Å0.5] 6.777

Miscellaneous details
Unique ID 1InSe2-1
Number of atoms 3
Number of species 2
Formula InSe2
Reduced formula InSe2
Stoichiometry AB2
Unit cell area [Å2] 14.504
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB2/InSe2/InSe2-47382673eb36
Old uid InSe2-47382673eb36
Space group (bulk in AA-stacking) P-4m2
Space group number (bulk in AA-stacking) 115
Point group -42m
Inversion symmetry No
Layer group number 59
Layer group p-4m2
2D Bravais type Square (tp)
Thickness [Å] 3.521
Structure origin original03-18
Band gap (PBE) [eV] 0.000
Miscellaneous details
Direct band gap (PBE) [eV] 0.000
gap_dir_nosoc 0.000
Vacuum level [eV] 3.060
Fermi level wrt. vacuum (PBE) [eV] -5.995
minhessianeig -1.314
Dynamically stable No
Interband polarizability (x) [Å] 6.907
Interband polarizability (y) [Å] 6.841
Interband polarizability (z) [Å] 0.413
Plasma frequency (x) [eV Å0.5] 6.770
Plasma frequency (y) [eV Å0.5] 6.777
Energy [eV] -10.355
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.236
Heat of formation [eV/atom] -0.209
This work is licensed under a Creative Commons Attribution-Noncomercial 4.0 International License.
Creative Commons License
Powered by Bottle and CAMD-Web