Structure info | |
---|---|
Layer group | p-6m2 |
Layer group number | 78 |
Structure origin | Wang23 |
Stability | |
---|---|
Energy above convex hull [eV/atom] | 0.036 |
Heat of formation [eV/atom] | -0.113 |
Dynamically stable | Yes |
Basic properties | |
---|---|
Magnetic | No |
Band gap (PBE) [eV] | 0.000 |
Symmetries | |
---|---|
2D Bravais type | Hexagonal (hp) |
Layer group number | 78 |
Layer group | p-6m2 |
Space group number (bulk in AA-stacking) | 187 |
Space group (bulk in AA-stacking) | P-6m2 |
Point group | -6m2 |
Inversion symmetry | No |
Structure data | |
---|---|
Formula | Cu3Se2 |
Stoichiometry | A2B3 |
Number of atoms | 5 |
Unit cell area [Å2] | 13.590 |
Thickness [Å] | 4.579 |
Se2Cu3 (1Se2Cu3-1) | |
---|---|
Heat of formation [eV/atom] | -0.11 |
Energy above convex hull [eV/atom] | 0.04 |
Monolayers from C2DB | |
---|---|
Se2Cu3, (1Se2Cu3-1) | -0.11 eV/atom |
Se2Cu4 (2SeCu2-1) | -0.11 eV/atom |
Cu2Se2 (2CuSe-1) | -0.09 eV/atom |
Cu2Se2 (2CuSe-2) | -0.08 eV/atom |
Cu2Se2 (2CuSe-3) | -0.07 eV/atom |
Se5Cu6 (1Se5Cu6-1) | -0.07 eV/atom |
Se2Cu4 (2SeCu2-2) | -0.04 eV/atom |
Cu2Se2 (2CuSe-4) | -0.04 eV/atom |
Cu2Se4 (2CuSe2-1) | -0.00 eV/atom |
Cu2Se2 (2CuSe-5) | 0.02 eV/atom |
CuSe2 (1CuSe2-1) | 0.03 eV/atom |
Cu2Se4 (2CuSe2-2) | 0.10 eV/atom |
CuSe2 (1CuSe2-2) | 0.12 eV/atom |
Cu2Se2 (2CuSe-6) | 0.12 eV/atom |
SeCu2 (1SeCu2-1) | 0.14 eV/atom |
CuSe2 (1CuSe2-3) | 0.17 eV/atom |
Se2 (2Se-1) | 0.21 eV/atom |
Se2 (2Se-2) | 0.29 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -0.00 |
Cij (N/m) | xx | yy | xy |
xx | 60.70 | 38.57 | -0.01 |
yy | 38.66 | 60.81 | -0.01 |
xy | -0.00 | -0.01 | 22.25 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 22.14 N/m |
Eigenvalue 1 | 22.25 N/m |
Eigenvalue 2 | 99.37 N/m |
Key values [eV] | |
---|---|
Band gap (PBE) | 0.000 |
Direct band gap (PBE) | 0.000 |
Fermi level wrt. vacuum (PBE) | -5.185 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | Cu | 0.34 |
1 | Cu | 0.34 |
2 | Cu | 0.23 |
3 | Se | -0.45 |
4 | Se | -0.45 |
Properties | |
---|---|
Interband polarizability (x) [Å] | 12.040 |
Interband polarizability (y) [Å] | 12.041 |
Interband polarizability (z) [Å] | 0.515 |
Plasma frequency (x) [eV Å0.5] | 7.830 |
Plasma frequency (y) [eV Å0.5] | 7.832 |
Miscellaneous details | |
---|---|
Unique ID | 1Se2Cu3-1 |
Number of atoms | 5 |
Number of species | 2 |
Formula | Cu3Se2 |
Reduced formula | Cu3Se2 |
Stoichiometry | A2B3 |
Unit cell area [Å2] | 13.590 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/tree_Wang23/A2B3/Se2Cu3/Se2Cu3-55b0744cb913 |
Old uid | Se2Cu3-f803fca01630 |
Space group (bulk in AA-stacking) | P-6m2 |
Space group number (bulk in AA-stacking) | 187 |
Point group | -6m2 |
Inversion symmetry | No |
Layer group number | 78 |
Layer group | p-6m2 |
2D Bravais type | Hexagonal (hp) |
Thickness [Å] | 4.579 |
Structure origin | Wang23 |
Band gap (PBE) [eV] | 0.000 |
Miscellaneous details | |
---|---|
Direct band gap (PBE) [eV] | 0.000 |
gap_dir_nosoc | 0.000 |
Vacuum level [eV] | 3.674 |
Fermi level wrt. vacuum (PBE) [eV] | -5.185 |
minhessianeig | -0.000 |
Dynamically stable | Yes |
Interband polarizability (x) [Å] | 12.040 |
Interband polarizability (y) [Å] | 12.041 |
Interband polarizability (z) [Å] | 0.515 |
Plasma frequency (x) [eV Å0.5] | 7.830 |
Plasma frequency (y) [eV Å0.5] | 7.832 |
Energy [eV] | -18.560 |
Magnetic | No |
Total magnetic moment [μB] | 0.000 |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Energy above convex hull [eV/atom] | 0.036 |
Heat of formation [eV/atom] | -0.113 |