Structure info | |
---|---|
Layer group | p-3m1 |
Layer group number | 72 |
Structure origin | original03-18 |
COD id of parent bulk structure | COD 9009120 |
ICSD id of parent bulk structure | ICSD 43003 |
Mono/few-layer report(s) | 10.1002/anie.201204675 |
Stability | |
---|---|
Energy above convex hull [eV/atom] | 0.000 |
Heat of formation [eV/atom] | -0.402 |
Dynamically stable | Yes |
Basic properties | |
---|---|
Magnetic | No |
Band gap (PBE) [eV] | 1.587 |
Band gap (HSE06) [eV] | 2.361 |
Band gap (G₀W₀) [eV] | 3.150 |
Symmetries | |
---|---|
2D Bravais type | Hexagonal (hp) |
Layer group number | 72 |
Layer group | p-3m1 |
Space group number (bulk in AA-stacking) | 164 |
Space group (bulk in AA-stacking) | P-3m1 |
Point group | -3m |
Inversion symmetry | Yes |
Structure data | |
---|---|
Formula | SnS2 |
Stoichiometry | AB2 |
Number of atoms | 3 |
Unit cell area [Å2] | 11.830 |
Thickness [Å] | 2.955 |
SnS2 (1SnS2-1) | |
---|---|
Heat of formation [eV/atom] | -0.40 |
Energy above convex hull [eV/atom] | 0.00 |
Monolayers from C2DB | |
---|---|
S4Sn4 (4SSn-1) | -0.42 eV/atom |
S2Sn2 (2SSn-1) | -0.41 eV/atom |
SnS2, (1SnS2-1) | -0.40 eV/atom |
S2Sn2 (2SSn-2) | -0.40 eV/atom |
Sn7S12 (1Sn7S12-1) | -0.38 eV/atom |
Sn9S12 (3Sn3S4-1) | -0.37 eV/atom |
Sn8S12 (4Sn2S3-1) | -0.36 eV/atom |
SSn (1SSn-1) | -0.34 eV/atom |
SnS2 (1SnS2-2) | -0.32 eV/atom |
SnS2 (1SnS2-3) | -0.12 eV/atom |
Sn2S4 (2SnS2-1) | -0.10 eV/atom |
S2Sn2 (2SSn-3) | -0.10 eV/atom |
Sn2S6 (2SnS3-1) | -0.08 eV/atom |
S2Sn2 (2SSn-4) | -0.02 eV/atom |
Sn4 (4Sn-1) | 0.26 eV/atom |
Sn2 (2Sn-1) | 0.44 eV/atom |
S2 (2S-1) | 0.45 eV/atom |
S2 (2S-2) | 0.62 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -0.00 |
DVB [eV] | xx | yy | xy |
Γ | -4.59 | -4.55 | -0.00 |
M | -0.05 | -4.03 | 3.41 |
K | 1.43 | 1.44 | -0.00 |
kVBM | -6.07 | -1.55 | -0.00 |
xx | yy | xy | |
Band gap [eV] | 5.73 | -3.28 | 3.91 |
DCB [eV] | xx | yy | xy |
Γ | -8.75 | -8.74 | -0.00 |
M | -0.34 | -4.84 | 3.91 |
K | -1.87 | -1.78 | -0.00 |
kCBM | -0.34 | -4.84 | 3.91 |
Cij (N/m) | xx | yy | xy |
xx | 70.47 | 16.96 | -0.09 |
yy | 17.36 | 70.01 | -0.09 |
xy | 0.00 | 0.00 | 53.08 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 53.08 N/m |
Eigenvalue 1 | 53.08 N/m |
Eigenvalue 2 | 87.40 N/m |
Key values [eV] | |
---|---|
Band gap (PBE) | 1.587 |
Direct band gap (PBE) | 1.820 |
Valence band maximum wrt. vacuum (PBE) | -6.823 |
Conduction band minimum wrt. vacuum (PBE) | -5.235 |
Key values [eV] | |
---|---|
Band gap (HSE06) | 2.361 |
Direct band gap (HSE06) | 2.627 |
Valence band maximum wrt. vacuum (HSE06) | -7.382 |
Conduction band minimum wrt. vacuum (HSE06) | -5.021 |
Key values [eV] | |
---|---|
Band gap (G₀W₀) | 3.150 |
Direct band gap (G₀W₀) | 3.402 |
Valence band maximum wrt. vacuum (G₀W₀) | -7.942 |
Conduction band minimum wrt. vacuum (G₀W₀) | -4.792 |
Property (VBM) | Value |
---|---|
Min eff. mass | 0.27 m0 |
Max eff. mass | 2.10 m0 |
DOS eff. mass | 0.75 m0 |
Crystal coordinates | [0.145, -0.000] |
Warping parameter | -0.000 |
Barrier height | > 25.3 meV |
Distance to barrier | > 0.0201 Å-1 |
Property (CBM) | Value |
---|---|
Min eff. mass | 0.25 m0 |
Max eff. mass | 0.78 m0 |
DOS eff. mass | 0.45 m0 |
Crystal coordinates | [0.500, 0.000] |
Warping parameter | 0.002 |
Barrier height | > 76.8 meV |
Distance to barrier | > 0.0195 Å-1 |
ZSnij | ux | uy | uz |
Px | 4.84 | 0.00 | -0.00 |
Py | -0.00 | 4.84 | 0.00 |
Pz | -0.00 | 0.00 | 0.49 |
ZSij | ux | uy | uz |
Px | -2.42 | -0.00 | 0.00 |
Py | 0.00 | -2.42 | -0.00 |
Pz | -0.00 | -0.00 | -0.25 |
ZSij | ux | uy | uz |
Px | -2.42 | -0.00 | 0.00 |
Py | 0.00 | -2.42 | -0.00 |
Pz | -0.00 | -0.00 | -0.25 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | Sn | 1.54 |
1 | S | -0.77 |
2 | S | -0.77 |
Properties | |
---|---|
Interband polarizability (x) [Å] | 3.168 |
Interband polarizability (y) [Å] | 3.168 |
Interband polarizability (z) [Å] | 0.367 |
Plasma frequency (x) [eV Å0.5] | 0.000 |
Plasma frequency (y) [eV Å0.5] | 0.000 |
Static polarizability [Å] | |
---|---|
Phonons only (x) | 4.37 |
Phonons only (y) | 4.17 |
Phonons only (z) | 0.02 |
Total (phonons + electrons) (x) | 7.53 |
Total (phonons + electrons) (y) | 7.33 |
Total (phonons + electrons) (z) | 0.38 |
Exciton binding energy (BSE) [eV] | 1.01 |
Mode | Frequency (1/cm) | Degeneracy |
---|---|---|
Mode 1 | 0. | 3 |
Mode 2 | 198.8 | 2 |
Mode 3 | 204.9 | 2 |
Mode 4 | 304.3 | 1 |
Mode 5 | 355.4 | 1 |
Miscellaneous details | |
---|---|
Unique ID | 1SnS2-1 |
Number of atoms | 3 |
Number of species | 2 |
Formula | SnS2 |
Reduced formula | SnS2 |
Stoichiometry | AB2 |
Unit cell area [Å2] | 11.830 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/tree/AB2/SnS2/SnS2-42a44e4e7298 |
Old uid | SnS2-42a44e4e7298 |
Space group (bulk in AA-stacking) | P-3m1 |
Space group number (bulk in AA-stacking) | 164 |
Point group | -3m |
Inversion symmetry | Yes |
Layer group number | 72 |
Layer group | p-3m1 |
2D Bravais type | Hexagonal (hp) |
Thickness [Å] | 2.955 |
Structure origin | original03-18 |
Band gap (PBE) [eV] | 1.587 |
Direct band gap (PBE) [eV] | 1.820 |
gap_dir_nosoc | 1.823 |
Vacuum level [eV] | 3.612 |
Fermi level wrt. vacuum (PBE) [eV] | -6.029 |
Valence band maximum wrt. vacuum (PBE) [eV] | -6.823 |
Conduction band minimum wrt. vacuum (PBE) [eV] | -5.235 |
minhessianeig | -0.000 |
Dynamically stable | Yes |
Band gap (HSE06) [eV] | 2.361 |
Direct band gap (HSE06) [eV] | 2.627 |
Fermi level wrt. vacuum (HSE) [eV] | -6.058 |
Miscellaneous details | |
---|---|
Valence band maximum wrt. vacuum (HSE06) [eV] | -7.382 |
Conduction band minimum wrt. vacuum (HSE06) [eV] | -5.021 |
Band gap (G₀W₀) [eV] | 3.150 |
Direct band gap (G₀W₀) [eV] | 3.402 |
Fermi level wrt. vacuum (G₀W₀) [eV] | -6.367 |
Valence band maximum wrt. vacuum (G₀W₀) [eV] | -7.942 |
Conduction band minimum wrt. vacuum (G₀W₀) [eV] | -4.792 |
E_B | 1.010 |
Interband polarizability (x) [Å] | 3.168 |
Interband polarizability (y) [Å] | 3.168 |
Interband polarizability (z) [Å] | 0.367 |
Static polarizability (phonons) (x) [Å] | 4.365 |
Static polarizability (phonons + electrons) (x) [Å] | 7.533 |
Static polarizability (phonons) (y) [Å] | 4.167 |
Static polarizability (phonons + electrons) (y) [Å] | 7.335 |
Static polarizability (phonons) (z) [Å] | 0.016 |
Static polarizability (phonons + electrons) (z) [Å] | 0.383 |
Plasma frequency (x) [eV Å0.5] | 0.000 |
Plasma frequency (y) [eV Å0.5] | 0.000 |
Energy [eV] | -13.417 |
ICSD id of parent bulk structure | ICSD 43003 |
COD id of parent bulk structure | COD 9009120 |
Mono/few-layer report(s) | 10.1002/anie.201204675 |
Magnetic | No |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Energy above convex hull [eV/atom] | 0.000 |
Heat of formation [eV/atom] | -0.402 |