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Structure info
Layer group p-4m2
Layer group number 59
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.082
Heat of formation [eV/atom] -0.319
Dynamically stable Yes
Basic properties
Magnetic No
Band gap (PBE) [eV] 1.438
Band gap (HSE06) [eV] 2.509
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 3.782 -0.000 0.000 Yes
2 0.000 3.782 0.000 Yes
3 0.000 0.000 18.451 No
Lengths [Å] 3.782 3.782 18.451
Angles [°] 90.000 90.000 90.000

Symmetries
2D Bravais type Square (tp)
Layer group number 59
Layer group p-4m2
Space group number (bulk in AA-stacking) 115
Space group (bulk in AA-stacking) P-4m2
Point group -42m
Inversion symmetry No
Structure data
Formula SnS2
Stoichiometry AB2
Number of atoms 3
Unit cell area [Å2] 14.300
Thickness [Å] 3.074

SnS2 (1SnS2-2)
Heat of formation [eV/atom] -0.32
Energy above convex hull [eV/atom] 0.08
Monolayers from C2DB
S4Sn4 (4SSn-1) -0.42 eV/atom
S2Sn2 (2SSn-1) -0.41 eV/atom
SnS2 (1SnS2-1) -0.40 eV/atom
S2Sn2 (2SSn-2) -0.40 eV/atom
Sn7S12 (1Sn7S12-1) -0.38 eV/atom
Sn9S12 (3Sn3S4-1) -0.37 eV/atom
Sn8S12 (4Sn2S3-1) -0.36 eV/atom
SSn (1SSn-1) -0.34 eV/atom
SnS2, (1SnS2-2) -0.32 eV/atom
SnS2 (1SnS2-3) -0.12 eV/atom
Sn2S4 (2SnS2-1) -0.10 eV/atom
S2Sn2 (2SSn-3) -0.10 eV/atom
Sn2S6 (2SnS3-1) -0.08 eV/atom
S2Sn2 (2SSn-4) -0.02 eV/atom
Sn4 (4Sn-1) 0.26 eV/atom
Sn2 (2Sn-1) 0.44 eV/atom
S2 (2S-1) 0.45 eV/atom
S2 (2S-2) 0.62 eV/atom
Bulk crystals from OQMD123
S4Sn4 -0.46 eV/atom
S2Sn -0.40 eV/atom
S48 0.00 eV/atom
Sn2 0.00 eV/atom

AB2/1SnS2/2/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

DVB [eV] xx yy xy
Γ -1.88 -1.88 0.00
M 2.07 2.07 0.00
X -4.90 -0.11 0.00
kVBM -4.90 -0.11 0.00
xx yy xy
Band gap [eV] 0.39 -4.40 -0.00
DCB [eV] xx yy xy
Γ -4.51 -4.51 0.00
M 0.37 0.37 -0.00
X -9.56 -0.53 0.00
kCBM -4.51 -4.51 0.00

Cij (N/m) xx yy xy
xx 53.00 -2.80 -0.00
yy -2.80 53.00 -0.00
xy 0.00 0.00 1.13
Stiffness tensor eigenvalues
Eigenvalue 0 1.13 N/m
Eigenvalue 1 50.20 N/m
Eigenvalue 2 55.80 N/m

cij [e/Å] xx yy xy
x -0.00 0.00 -0.00
y 0.00 0.00 0.00
z -0.00 0.00 -0.00
cijclamped [e/Å] xx yy xy
x 0.00 0.00 -0.00
y -0.00 0.00 0.00
z 0.02 -0.02 -0.00

Key values [eV]
Band gap (PBE) 1.438
Direct band gap (PBE) 1.689
Valence band maximum wrt. vacuum (PBE) -6.118
Conduction band minimum wrt. vacuum (PBE) -4.679
DOS BZ

Key values [eV]
Band gap (HSE06) 2.509
Direct band gap (HSE06) 2.724
Valence band maximum wrt. vacuum (HSE06) -6.879
Conduction band minimum wrt. vacuum (HSE06) -4.370

VBM
Property (VBM) Value
Min eff. mass 0.60 m0
Max eff. mass 3.49 m0
DOS eff. mass 1.32 m0
Crystal coordinates [0.000, 0.497]
Warping parameter -0.007
Barrier height > 9.8 meV
Distance to barrier > 0.0165 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.33 m0
Max eff. mass
DOS eff. mass
Crystal coordinates [-0.000, 0.001]
Warping parameter 0.040
Barrier height > 89.2 meV
Distance to barrier > 0.0165 Å-1

ZSnij ux uy uz
Px 3.68 -0.00 0.00
Py -0.00 3.68 0.00
Pz 0.00 -0.00 0.48
ZSij ux uy uz
Px -2.74 -0.00 0.00
Py 0.00 -0.94 -0.00
Pz 0.00 0.00 -0.24
ZSij ux uy uz
Px -0.94 -0.00 -0.00
Py -0.00 -2.74 -0.00
Pz -0.00 -0.00 -0.24

Atom No. Chemical symbol Charges [|e|]
0 Sn 1.45
1 S -0.73
2 S -0.73

AB2/1SnS2/2/rpa-pol-x.png AB2/1SnS2/2/rpa-pol-z.png
AB2/1SnS2/2/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 2.094
Interband polarizability (y) [Å] 2.094
Interband polarizability (z) [Å] 0.355
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000

AB2/1SnS2/2/ir-pol-x.png AB2/1SnS2/2/ir-pol-z.png
AB2/1SnS2/2/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 2.73
Phonons only (y) 2.72
Phonons only (z) 0.01
Total (phonons + electrons) (x) 4.82
Total (phonons + electrons) (y) 4.82
Total (phonons + electrons) (z) 0.37

AB2/1SnS2/2/shg1.png AB2/1SnS2/2/shg3.png
AB2/1SnS2/2/shg2.png
Element Relations
xxz xxz=xzx=-yyz=-yzy
Others 0=xxx=yyy=xxy=xyy=xyz=xzy=xzz=yxx=yxy=yxz=yyx=xyx= yzx=yzz=zxy=zxz=zyx=zyz=zzx=zzy=zzz
zxx zxx=-zyy

Shift-current
Element Relations
xxz xxz=xzx=-yyz=-yzy
Others 0=xxx=yyy=xyx=xyy=xyz=xzy=xzz=yxx=yxy=yxz=yyx=xxy= yzx=yzz=zxy=zxz=zyx=zyz=zzx=zzy=zzz
zxx zxx=-zyy
Shift-current

AB2/1SnS2/2/Raman.png
Mode Frequency (1/cm) Degeneracy
Mode 1 0.1 3
Mode 2 81.1 2
Mode 3 307. 2
Mode 4 309.7 1
Mode 5 385.5 1

Miscellaneous details
Unique ID 1SnS2-2
Number of atoms 3
Number of species 2
Formula SnS2
Reduced formula SnS2
Stoichiometry AB2
Unit cell area [Å2] 14.300
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB2/SnS2/SnS2-08a9307b286e
Old uid SnS2-08a9307b286e
Space group (bulk in AA-stacking) P-4m2
Space group number (bulk in AA-stacking) 115
Point group -42m
Inversion symmetry No
Layer group number 59
Layer group p-4m2
2D Bravais type Square (tp)
Thickness [Å] 3.074
Structure origin original03-18
Band gap (PBE) [eV] 1.438
Direct band gap (PBE) [eV] 1.689
gap_dir_nosoc 1.709
Vacuum level [eV] 2.879
Fermi level wrt. vacuum (PBE) [eV] -5.399
Valence band maximum wrt. vacuum (PBE) [eV] -6.118
Conduction band minimum wrt. vacuum (PBE) [eV] -4.679
Miscellaneous details
minhessianeig -0.000
Dynamically stable Yes
Band gap (HSE06) [eV] 2.509
Direct band gap (HSE06) [eV] 2.724
Fermi level wrt. vacuum (HSE) [eV] -5.625
Valence band maximum wrt. vacuum (HSE06) [eV] -6.879
Conduction band minimum wrt. vacuum (HSE06) [eV] -4.370
Interband polarizability (x) [Å] 2.094
Interband polarizability (y) [Å] 2.094
Interband polarizability (z) [Å] 0.355
Static polarizability (phonons) (x) [Å] 2.725
Static polarizability (phonons + electrons) (x) [Å] 4.819
Static polarizability (phonons) (y) [Å] 2.723
Static polarizability (phonons + electrons) (y) [Å] 4.817
Static polarizability (phonons) (z) [Å] 0.011
Static polarizability (phonons + electrons) (z) [Å] 0.366
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000
Energy [eV] -13.170
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.082
Heat of formation [eV/atom] -0.319
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