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Structure info
Layer group p-4m2
Layer group number 59
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.270
Heat of formation [eV/atom] -0.861
Dynamically stable Yes
Basic properties
Magnetic No
Band gap (PBE) [eV] 0.878
Band gap (HSE06) [eV] 2.220
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 3.829 -0.000 0.000 Yes
2 0.000 3.829 0.000 Yes
3 -0.000 0.000 18.960 No
Lengths [Å] 3.829 3.829 18.960
Angles [°] 90.000 90.000 90.000

Symmetries
2D Bravais type Square (tp)
Layer group number 59
Layer group p-4m2
Space group number (bulk in AA-stacking) 115
Space group (bulk in AA-stacking) P-4m2
Point group -42m
Inversion symmetry No
Structure data
Formula TiSe2
Stoichiometry AB2
Number of atoms 3
Unit cell area [Å2] 14.659
Thickness [Å] 2.943

TiSe2 (1TiSe2-3)
Heat of formation [eV/atom] -0.86
Energy above convex hull [eV/atom] 0.27
Monolayers from C2DB
Ti4Se8 (4TiSe2-1) -1.13 eV/atom
Ti2Se3 (1Ti2Se3-1) -1.12 eV/atom
TiSe2 (1TiSe2-1) -1.12 eV/atom
TiSe2 (1TiSe2-2) -1.00 eV/atom
Ti2Se2 (2SeTi-1) -0.87 eV/atom
TiSe2, (1TiSe2-3) -0.86 eV/atom
Ti2Se2 (2SeTi-2) -0.83 eV/atom
Ti2Se6 (2TiSe3-1) -0.83 eV/atom
Ti2Se2 (2SeTi-3) -0.78 eV/atom
Ti2Se2 (2SeTi-4) -0.56 eV/atom
Ti2Se2 (2SeTi-5) -0.55 eV/atom
Se2 (2Se-1) 0.21 eV/atom
Se2 (2Se-2) 0.29 eV/atom
Bulk crystals from OQMD123
Ti6Se8 -1.22 eV/atom
Ti2Se4 -1.12 eV/atom
Ti5Se4 -1.06 eV/atom
Ti24Se12 -0.83 eV/atom
Se3 0.00 eV/atom
Ti3 0.00 eV/atom

materials/AB2/1TiSe2/3/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

DVB [eV] xx yy xy
Γ -3.23 -3.23 0.00
M 2.04 2.04 0.00
X -5.26 -0.62 -0.00
kVBM -3.23 -3.23 0.00
xx yy xy
Band gap [eV] 2.01 2.01 0.60
DCB [eV] xx yy xy
Γ 0.91 0.91 0.00
M -2.09 -2.09 0.00
X -0.80 -6.06 0.00
kCBM -1.22 -1.22 0.60

Cij (N/m) xx yy xy
xx 26.15 2.99 0.00
yy 2.99 26.15 0.00
xy 0.00 0.00 8.54
Stiffness tensor eigenvalues
Eigenvalue 0 8.54 N/m
Eigenvalue 1 23.17 N/m
Eigenvalue 2 29.14 N/m

cij [e/Å] xx yy xy
x 0.00 0.00 -0.00
y 0.00 0.00 -0.00
z 0.01 -0.01 0.00
cijclamped [e/Å] xx yy xy
x -0.00 0.00 -0.00
y 0.00 0.00 -0.00
z 0.03 -0.03 0.00

Key values [eV]
Band gap (PBE) 0.878
Direct band gap (PBE) 1.320
Valence band maximum wrt. vacuum (PBE) -5.906
Conduction band minimum wrt. vacuum (PBE) -5.028
DOS BZ

Key values [eV]
Band gap (HSE06) 2.220
Direct band gap (HSE06) 2.886
Valence band maximum wrt. vacuum (HSE06) -6.386
Conduction band minimum wrt. vacuum (HSE06) -4.166

VBM
Property (VBM) Value
Min eff. mass 0.57 m0
Max eff. mass 57.25 m0
DOS eff. mass 5.62 m0
Crystal coordinates [0.000, 0.004]
Warping parameter -0.003
Barrier height > 41.7 meV
Distance to barrier > 0.0163 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.77 m0
Max eff. mass 1.59 m0
DOS eff. mass 1.10 m0
Crystal coordinates [0.362, 0.362]
Warping parameter 0.001
Barrier height > 24.9 meV
Distance to barrier > 0.0164 Å-1

ZTiij ux uy uz
Px 4.75 0.00 -0.00
Py -0.00 4.75 0.00
Pz 0.00 -0.00 0.29
ZSeij ux uy uz
Px -4.55 -0.00 -0.00
Py 0.00 -0.20 0.00
Pz -0.00 -0.00 -0.15
ZSeij ux uy uz
Px -0.20 0.00 0.00
Py 0.00 -4.55 -0.00
Pz 0.00 0.00 -0.15

Atom No. Chemical symbol Charges [|e|]
0 Ti 1.57
1 Se -0.79
2 Se -0.79

materials/AB2/1TiSe2/3/rpa-pol-x.png materials/AB2/1TiSe2/3/rpa-pol-z.png
materials/AB2/1TiSe2/3/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 3.681
Interband polarizability (y) [Å] 3.670
Interband polarizability (z) [Å] 0.349
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000

materials/AB2/1TiSe2/3/ir-pol-x.png materials/AB2/1TiSe2/3/ir-pol-z.png
materials/AB2/1TiSe2/3/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 2.85
Phonons only (y) 2.85
Phonons only (z) 0.01
Total (phonons + electrons) (x) 6.53
Total (phonons + electrons) (y) 6.52
Total (phonons + electrons) (z) 0.35

materials/AB2/1TiSe2/3/shg1.png materials/AB2/1TiSe2/3/shg3.png
materials/AB2/1TiSe2/3/shg2.png
Element Relations
xxz xxz=xzx=-yyz=-yzy
Others 0=xxx=yyy=xxy=xyy=xyz=xzy=xzz=yxx=yxy=yxz=yyx=xyx= yzx=yzz=zxy=zxz=zyx=zyz=zzx=zzy=zzz
zxx zxx=-zyy

Shift-current
Element Relations
xxz xxz=xzx=-yyz=-yzy
Others 0=xxx=yyy=xyx=xyy=xyz=xzy=xzz=yxx=yxy=yxz=yyx=xxy= yzx=yzz=zxy=zxz=zyx=zyz=zzx=zzy=zzz
zxx zxx=-zyy
Shift-current

materials/AB2/1TiSe2/3/Raman.png
Mode Frequency (1/cm) Degeneracy
Mode 1 0. 3
Mode 2 56.8 2
Mode 3 174.4 1
Mode 4 271.9 2
Mode 5 358.1 1

Miscellaneous details
Unique ID 1TiSe2-3
Number of atoms 3
Number of species 2
Formula TiSe2
Reduced formula TiSe2
Stoichiometry AB2
Unit cell area [Å2] 14.659
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB2/TiSe2/TiSe2-0684166af1fd
Old uid TiSe2-0684166af1fd
Space group (bulk in AA-stacking) P-4m2
Space group number (bulk in AA-stacking) 115
Point group -42m
Inversion symmetry No
Layer group number 59
Layer group p-4m2
2D Bravais type Square (tp)
Thickness [Å] 2.943
Structure origin original03-18
Band gap (PBE) [eV] 0.878
Direct band gap (PBE) [eV] 1.320
gap_dir_nosoc 1.388
Vacuum level [eV] 2.746
Fermi level wrt. vacuum (PBE) [eV] -5.467
Valence band maximum wrt. vacuum (PBE) [eV] -5.906
Conduction band minimum wrt. vacuum (PBE) [eV] -5.028
Miscellaneous details
minhessianeig -0.000
Dynamically stable Yes
Band gap (HSE06) [eV] 2.220
Direct band gap (HSE06) [eV] 2.886
Fermi level wrt. vacuum (HSE) [eV] -5.276
Valence band maximum wrt. vacuum (HSE06) [eV] -6.386
Conduction band minimum wrt. vacuum (HSE06) [eV] -4.166
Interband polarizability (x) [Å] 3.681
Interband polarizability (y) [Å] 3.670
Interband polarizability (z) [Å] 0.349
Static polarizability (phonons) (x) [Å] 2.852
Static polarizability (phonons + electrons) (x) [Å] 6.533
Static polarizability (phonons) (y) [Å] 2.853
Static polarizability (phonons + electrons) (y) [Å] 6.522
Static polarizability (phonons) (z) [Å] 0.005
Static polarizability (phonons + electrons) (z) [Å] 0.354
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000
Energy [eV] -16.239
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.270
Heat of formation [eV/atom] -0.861
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