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Structure info
Layer group p-4m2
Layer group number 59
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.464
Heat of formation [eV/atom] -3.051
Dynamically stable Yes
Basic properties
Magnetic No
Band gap (PBE) [eV] 4.369
Band gap (HSE06) [eV] 6.238
Band gap (G₀W₀) [eV] 7.510
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 3.480 -0.000 0.000 Yes
2 -0.000 3.480 0.000 Yes
3 -0.000 0.000 18.408 No
Lengths [Å] 3.480 3.480 18.408
Angles [°] 90.000 90.000 90.000

Symmetries
2D Bravais type Square (tp)
Layer group number 59
Layer group p-4m2
Space group number (bulk in AA-stacking) 115
Space group (bulk in AA-stacking) P-4m2
Point group -42m
Inversion symmetry No
Structure data
Formula ZrO2
Stoichiometry AB2
Number of atoms 3
Unit cell area [Å2] 12.113
Thickness [Å] 1.877

ZrO2 (1ZrO2-2)
Heat of formation [eV/atom] -3.05
Energy above convex hull [eV/atom] 0.46
Monolayers from C2DB
ZrO2 (1ZrO2-1) -3.30 eV/atom
Zr4O8 (4ZrO2-1) -3.14 eV/atom
ZrO2, (1ZrO2-2) -3.05 eV/atom
ZrO2 (1ZrO2-3) -2.75 eV/atom
Zr2O6 (2ZrO3-1) -2.48 eV/atom
O2Zr2 (2OZr-1) -2.23 eV/atom
O2Zr2 (2OZr-2) -2.05 eV/atom
O2Zr2 (2OZr-3) -1.95 eV/atom
O2Zr2 (2OZr-4) -1.81 eV/atom
OZr (1OZr-1) -1.69 eV/atom
Bulk crystals from OQMD123
O8Zr4 -3.52 eV/atom
O2Zr6 -1.43 eV/atom
O8 0.00 eV/atom
Zr2 0.00 eV/atom

AB2/1ZrO2/2/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

DVB [eV] xx yy xy
Γ 4.38 4.37 0.00
M 4.01 4.01 0.00
X 4.48 7.58 0.00
kVBM 4.38 4.37 0.00
xx yy xy
Band gap [eV] -1.08 -1.08 0.00
DCB [eV] xx yy xy
Γ 1.09 1.09 0.00
M 3.30 3.30 0.00
X 2.19 -4.31 0.00
kCBM 3.30 3.30 0.00

Cij (N/m) xx yy xy
xx 75.38 4.08 0.00
yy 4.08 75.38 0.00
xy 0.00 0.00 8.48
Stiffness tensor eigenvalues
Eigenvalue 0 8.48 N/m
Eigenvalue 1 71.30 N/m
Eigenvalue 2 79.46 N/m

cij [e/Å] xx yy xy
x 0.00 -0.00 -0.00
y 0.00 0.00 0.00
z -0.05 0.05 -0.00
cijclamped [e/Å] xx yy xy
x -0.00 0.00 -0.00
y 0.00 0.00 0.00
z 0.04 -0.04 -0.00

Key values [eV]
Band gap (PBE) 4.369
Direct band gap (PBE) 4.531
Valence band maximum wrt. vacuum (PBE) -7.490
Conduction band minimum wrt. vacuum (PBE) -3.122
DOS BZ

Key values [eV]
Band gap (HSE06) 6.238
Direct band gap (HSE06) 6.410
Valence band maximum wrt. vacuum (HSE06) -8.741
Conduction band minimum wrt. vacuum (HSE06) -2.503

Key values [eV]
Band gap (G₀W₀) 7.510
Direct band gap (G₀W₀) 7.510
Valence band maximum wrt. vacuum (G₀W₀) -9.237
Conduction band minimum wrt. vacuum (G₀W₀) -1.728

VBM
Property (VBM) Value
Min eff. mass 1.08 m0
Max eff. mass
DOS eff. mass
Crystal coordinates [0.000, 0.000]
Warping parameter -0.037
Barrier height > 19.7 meV
Distance to barrier > 0.0181 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.82 m0
Max eff. mass 3.38 m0
DOS eff. mass 1.67 m0
Crystal coordinates [0.492, 0.492]
Warping parameter 0.004
Barrier height 0.0 meV
Distance to barrier 0 Å-1

ZZrij ux uy uz
Px 5.45 -0.00 -0.00
Py -0.00 5.45 0.00
Pz -0.00 -0.00 1.09
ZOij ux uy uz
Px -4.45 0.00 0.00
Py 0.00 -1.00 -0.00
Pz -0.00 -0.00 -0.54
ZOij ux uy uz
Px -1.00 0.00 0.00
Py -0.00 -4.45 -0.00
Pz -0.00 -0.00 -0.54

Atom No. Chemical symbol Charges [|e|]
0 Zr 2.47
1 O -1.23
2 O -1.23

AB2/1ZrO2/2/rpa-pol-x.png AB2/1ZrO2/2/rpa-pol-z.png
AB2/1ZrO2/2/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 1.048
Interband polarizability (y) [Å] 1.048
Interband polarizability (z) [Å] 0.195
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000

AB2/1ZrO2/2/ir-pol-x.png AB2/1ZrO2/2/ir-pol-z.png
AB2/1ZrO2/2/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 2.29
Phonons only (y) 2.29
Phonons only (z) 0.05
Total (phonons + electrons) (x) 3.34
Total (phonons + electrons) (y) 3.34
Total (phonons + electrons) (z) 0.24

AB2/1ZrO2/2/shg1.png AB2/1ZrO2/2/shg3.png
AB2/1ZrO2/2/shg2.png
Element Relations
xxz xxz=xzx=-yyz=-yzy
Others 0=xxx=yyy=xxy=xyy=xyz=xzy=xzz=yxx=yxy=yxz=yyx=xyx= yzx=yzz=zxy=zxz=zyx=zyz=zzx=zzy=zzz
zxx zxx=-zyy

Shift-current
Element Relations
xxz xxz=xzx=-yyz=-yzy
Others 0=xxx=yyy=xyx=xyy=xyz=xzy=xzz=yxx=yxy=yxz=yyx=xxy= yzx=yzz=zxy=zxz=zyx=zyz=zzx=zzy=zzz
zxx zxx=-zyy
Shift-current

AB2/1ZrO2/2/Raman.png
Mode Frequency (1/cm) Degeneracy
Mode 1 0. 3
Mode 2 174.3 2
Mode 3 492.7 1
Mode 4 569.9 2
Mode 5 585.2 1

Miscellaneous details
Unique ID 1ZrO2-2
Number of atoms 3
Number of species 2
Formula ZrO2
Reduced formula ZrO2
Stoichiometry AB2
Unit cell area [Å2] 12.113
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB2/ZrO2/ZrO2-da3987f48688
Old uid ZrO2-da3987f48688
Space group (bulk in AA-stacking) P-4m2
Space group number (bulk in AA-stacking) 115
Point group -42m
Inversion symmetry No
Layer group number 59
Layer group p-4m2
2D Bravais type Square (tp)
Thickness [Å] 1.877
Structure origin original03-18
Band gap (PBE) [eV] 4.369
Direct band gap (PBE) [eV] 4.531
gap_dir_nosoc 4.569
Vacuum level [eV] 2.216
Fermi level wrt. vacuum (PBE) [eV] -5.306
Valence band maximum wrt. vacuum (PBE) [eV] -7.490
Conduction band minimum wrt. vacuum (PBE) [eV] -3.122
minhessianeig -0.000
Dynamically stable Yes
Band gap (HSE06) [eV] 6.238
Miscellaneous details
Direct band gap (HSE06) [eV] 6.410
Fermi level wrt. vacuum (HSE) [eV] -5.622
Valence band maximum wrt. vacuum (HSE06) [eV] -8.741
Conduction band minimum wrt. vacuum (HSE06) [eV] -2.503
Band gap (G₀W₀) [eV] 7.510
Direct band gap (G₀W₀) [eV] 7.510
Fermi level wrt. vacuum (G₀W₀) [eV] -5.482
Valence band maximum wrt. vacuum (G₀W₀) [eV] -9.237
Conduction band minimum wrt. vacuum (G₀W₀) [eV] -1.728
Interband polarizability (x) [Å] 1.048
Interband polarizability (y) [Å] 1.048
Interband polarizability (z) [Å] 0.195
Static polarizability (phonons) (x) [Å] 2.291
Static polarizability (phonons + electrons) (x) [Å] 3.339
Static polarizability (phonons) (y) [Å] 2.291
Static polarizability (phonons + electrons) (y) [Å] 3.339
Static polarizability (phonons) (z) [Å] 0.049
Static polarizability (phonons + electrons) (z) [Å] 0.244
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000
Energy [eV] -26.805
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.464
Heat of formation [eV/atom] -3.051
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