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Structure info
Layer group c211
Layer group number 10
Structure origin Wang23
Stability
Energy above convex hull [eV/atom] 0.050
Heat of formation [eV/atom] -0.807
Dynamically stable Yes
Basic properties
Magnetic No
Band gap (PBE) [eV] 1.319
Band gap (HSE06) [eV] 2.034
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 3.810 0.000 0.000 Yes
2 0.000 6.334 0.000 Yes
3 0.000 0.000 21.074 No
Lengths [Å] 3.810 6.334 21.074
Angles [°] 90.000 90.000 90.000

Symmetries
2D Bravais type Centered rectangular (oc)
Layer group number 10
Layer group c211
Space group number (bulk in AA-stacking) 5
Space group (bulk in AA-stacking) C2
Point group 2
Inversion symmetry No
Structure data
Formula Al4Se6
Stoichiometry A2B3
Number of atoms 10
Unit cell area [Å2] 24.134
Thickness [Å] 6.074

Al4Se6 (2Al2Se3-3)
Heat of formation [eV/atom] -0.81
Energy above convex hull [eV/atom] 0.05
Monolayers from C2DB
Al8Se12 (4Al2Se3-1) -0.86 eV/atom
Al4Se6 (2Al2Se3-1) -0.84 eV/atom
Al4Se6 (2Al2Se3-2) -0.83 eV/atom
Al4Se6, (2Al2Se3-3) -0.81 eV/atom
Al2Se3 (1Al2Se3-1) -0.79 eV/atom
Al6Se9 (3Al2Se3-1) -0.77 eV/atom
Al2Se3 (1Al2Se3-2) -0.77 eV/atom
Al3Se4 (1Al3Se4-1) -0.72 eV/atom
Al2Se2 (2AlSe-1) -0.72 eV/atom
Al2Se2 (2AlSe-2) -0.71 eV/atom
Al2Se2 (2AlSe-3) -0.69 eV/atom
Al2Se5 (1Al2Se5-1) -0.60 eV/atom
Al2Se4 (2AlSe2-1) -0.55 eV/atom
AlSe2 (1AlSe2-1) -0.55 eV/atom
Al2Se2 (2AlSe-4) -0.36 eV/atom
Al2Se4 (2AlSe2-2) -0.31 eV/atom
Al2Se2 (2AlSe-5) -0.14 eV/atom
AlSe4 (1AlSe4-1) -0.13 eV/atom
Se2 (2Se-1) 0.21 eV/atom
Se2 (2Se-2) 0.29 eV/atom
Bulk crystals from OQMD123
Al4Se6 -0.84 eV/atom
Al 0.00 eV/atom
Se3 0.00 eV/atom

A2B3/2Al2Se3/3/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

Cij (N/m) xx yy xy
xx 90.02 35.16 0.00
yy 35.69 113.76 0.00
xy -0.00 -0.00 70.50
Stiffness tensor eigenvalues
Eigenvalue 0 64.53 N/m
Eigenvalue 1 70.50 N/m
Eigenvalue 2 139.24 N/m

cij [e/Å] xx yy xy
x 0.46 0.11 0.00
y 0.00 -0.00 0.75
z 0.00 -0.00 -0.02
cijclamped [e/Å] xx yy xy
x 0.04 0.05 0.00
y 0.00 -0.00 0.02
z -0.00 -0.00 -0.01

Key values [eV]
Band gap (PBE) 1.319
Direct band gap (PBE) 1.376
Valence band maximum wrt. vacuum (PBE) -5.990
Conduction band minimum wrt. vacuum (PBE) -4.671
DOS BZ

Key values [eV]
Band gap (HSE06) 2.034
Direct band gap (HSE06) 2.082
Valence band maximum wrt. vacuum (HSE06) -6.501
Conduction band minimum wrt. vacuum (HSE06) -4.468

ZAlij ux uy uz
Px 3.17 -0.30 0.06
Py -0.30 3.51 -0.10
Pz -0.01 -0.03 0.45
ZAlij ux uy uz
Px 3.17 -0.30 0.06
Py -0.30 3.51 -0.10
Pz -0.01 -0.03 0.45
ZSeij ux uy uz
Px -2.12 -0.03 -0.01
Py -0.10 -2.02 0.09
Pz 0.01 0.00 -0.22
ZSeij ux uy uz
Px -2.12 -0.03 -0.01
Py -0.10 -2.02 0.09
Pz 0.01 0.00 -0.22
ZSeij ux uy uz
Px -2.11 -0.00 -0.00
Py 0.00 -2.99 0.02
Pz 0.00 0.06 -0.46
ZAlij ux uy uz
Px 3.17 0.30 -0.06
Py 0.30 3.51 -0.10
Pz 0.01 -0.03 0.45
ZAlij ux uy uz
Px 3.17 0.30 -0.06
Py 0.30 3.51 -0.10
Pz 0.01 -0.03 0.45
ZSeij ux uy uz
Px -2.12 0.03 0.01
Py 0.10 -2.02 0.09
Pz -0.01 0.00 -0.22
ZSeij ux uy uz
Px -2.12 0.03 0.01
Py 0.10 -2.02 0.09
Pz -0.01 0.00 -0.22
ZSeij ux uy uz
Px -2.11 -0.00 -0.00
Py -0.00 -2.99 0.02
Pz -0.00 0.06 -0.46

Atom No. Chemical symbol Charges [|e|]
0 Al 2.05
1 Al 2.05
2 Al 2.05
3 Al 2.05
4 Se -1.34
5 Se -1.34
6 Se -1.34
7 Se -1.34
8 Se -1.42
9 Se -1.42

A2B3/2Al2Se3/3/rpa-pol-x.png A2B3/2Al2Se3/3/rpa-pol-z.png
A2B3/2Al2Se3/3/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 4.729
Interband polarizability (y) [Å] 5.028
Interband polarizability (z) [Å] 0.607

A2B3/2Al2Se3/3/ir-pol-x.png A2B3/2Al2Se3/3/ir-pol-z.png
A2B3/2Al2Se3/3/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 4.47
Phonons only (y) 18.63
Phonons only (z) 0.09
Total (phonons + electrons) (x) 9.20
Total (phonons + electrons) (y) 23.66
Total (phonons + electrons) (z) 0.70

Miscellaneous details
Unique ID 2Al2Se3-3
Number of atoms 10
Number of species 2
Formula Al4Se6
Reduced formula Al2Se3
Stoichiometry A2B3
Unit cell area [Å2] 24.134
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree_Wang23/A2B3/Al2Se3/Al4Se6-02a889d9a89a
Old uid Al4Se6-5f5967159e45
Space group (bulk in AA-stacking) C2
Space group number (bulk in AA-stacking) 5
Point group 2
Inversion symmetry No
Layer group number 10
Layer group c211
2D Bravais type Centered rectangular (oc)
Thickness [Å] 6.074
Structure origin Wang23
Band gap (PBE) [eV] 1.319
Direct band gap (PBE) [eV] 1.376
gap_dir_nosoc 1.399
Vacuum level [eV] 4.733
Fermi level wrt. vacuum (PBE) [eV] -5.331
Valence band maximum wrt. vacuum (PBE) [eV] -5.990
Conduction band minimum wrt. vacuum (PBE) [eV] -4.671
Miscellaneous details
minhessianeig -0.000
Dynamically stable Yes
Band gap (HSE06) [eV] 2.034
Direct band gap (HSE06) [eV] 2.082
Fermi level wrt. vacuum (HSE) [eV] -5.484
Valence band maximum wrt. vacuum (HSE06) [eV] -6.501
Conduction band minimum wrt. vacuum (HSE06) [eV] -4.468
Interband polarizability (x) [Å] 4.729
Interband polarizability (y) [Å] 5.028
Interband polarizability (z) [Å] 0.607
Static polarizability (phonons) (x) [Å] 4.474
Static polarizability (phonons + electrons) (x) [Å] 9.203
Static polarizability (phonons) (y) [Å] 18.632
Static polarizability (phonons + electrons) (y) [Å] 23.660
Static polarizability (phonons) (z) [Å] 0.093
Static polarizability (phonons + electrons) (z) [Å] 0.699
Energy [eV] -43.921
Magnetic No
Total magnetic moment [μB] 0.000
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.050
Heat of formation [eV/atom] -0.807
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