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Structure info
Layer group p-3m1
Layer group number 72
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.006
Heat of formation [eV/atom] -0.711
Dynamically stable Yes
Basic properties
Magnetic No
Band gap (PBE) [eV] 2.138
Band gap (HSE06) [eV] 2.866
Band gap (G₀W₀) [eV] 3.738
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 3.792 0.000 0.000 Yes
2 -1.896 3.284 0.000 Yes
3 0.000 0.000 19.899 No
Lengths [Å] 3.792 3.792 19.899
Angles [°] 90.000 90.000 120.000

Symmetries
2D Bravais type Hexagonal (hp)
Layer group number 72
Layer group p-3m1
Space group number (bulk in AA-stacking) 164
Space group (bulk in AA-stacking) P-3m1
Point group -3m
Inversion symmetry Yes
Structure data
Formula Al2Se2
Stoichiometry AB
Number of atoms 4
Unit cell area [Å2] 12.454
Thickness [Å] 4.899

Al2Se2 (2AlSe-2)
Heat of formation [eV/atom] -0.71
Energy above convex hull [eV/atom] 0.01
Monolayers from C2DB
Al8Se12 (4Al2Se3-1) -0.86 eV/atom
Al4Se6 (2Al2Se3-1) -0.84 eV/atom
Al4Se6 (2Al2Se3-2) -0.83 eV/atom
Al4Se6 (2Al2Se3-3) -0.81 eV/atom
Al2Se3 (1Al2Se3-1) -0.79 eV/atom
Al6Se9 (3Al2Se3-1) -0.77 eV/atom
Al2Se3 (1Al2Se3-2) -0.77 eV/atom
Al3Se4 (1Al3Se4-1) -0.72 eV/atom
Al2Se2 (2AlSe-1) -0.72 eV/atom
Al2Se2, (2AlSe-2) -0.71 eV/atom
Al2Se2 (2AlSe-3) -0.69 eV/atom
Al2Se5 (1Al2Se5-1) -0.60 eV/atom
Al2Se4 (2AlSe2-1) -0.55 eV/atom
AlSe2 (1AlSe2-1) -0.55 eV/atom
Al2Se2 (2AlSe-4) -0.36 eV/atom
Al2Se4 (2AlSe2-2) -0.31 eV/atom
Al2Se2 (2AlSe-5) -0.14 eV/atom
AlSe4 (1AlSe4-1) -0.13 eV/atom
Se2 (2Se-1) 0.21 eV/atom
Se2 (2Se-2) 0.29 eV/atom
Bulk crystals from OQMD123
Al4Se6 -0.84 eV/atom
Al 0.00 eV/atom
Se3 0.00 eV/atom

AB/2AlSe/2/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

DVB [eV] xx yy xy
Γ 2.77 2.80 0.00
M 0.17 1.54 -0.83
K 0.01 0.05 0.00
kVBM 2.63 2.47 -0.36
xx yy xy
Band gap [eV] 0.29 -1.53 1.76
DCB [eV] xx yy xy
Γ -9.12 -9.11 0.00
M 2.92 0.93 1.40
K 3.00 3.05 0.00
kCBM 2.92 0.93 1.40

Cij (N/m) xx yy xy
xx 70.21 14.52 -0.01
yy 14.69 70.11 -0.00
xy 0.00 0.00 57.59
Stiffness tensor eigenvalues
Eigenvalue 0 55.55 N/m
Eigenvalue 1 57.59 N/m
Eigenvalue 2 84.76 N/m

Key values [eV]
Band gap (PBE) 2.138
Direct band gap (PBE) 2.710
Valence band maximum wrt. vacuum (PBE) -5.792
Conduction band minimum wrt. vacuum (PBE) -3.654
DOS BZ

Key values [eV]
Band gap (HSE06) 2.866
Direct band gap (HSE06) 3.515
Valence band maximum wrt. vacuum (HSE06) -6.283
Conduction band minimum wrt. vacuum (HSE06) -3.417

Key values [eV]
Band gap (G₀W₀) 3.738
Direct band gap (G₀W₀) 4.349
Valence band maximum wrt. vacuum (G₀W₀) -7.036
Conduction band minimum wrt. vacuum (G₀W₀) -3.297

VBM
Property (VBM) Value
Min eff. mass 2.00 m0
Max eff. mass 5.49 m0
DOS eff. mass 3.32 m0
Crystal coordinates [0.112, 0.112]
Warping parameter -0.000
Barrier height > 7.1 meV
Distance to barrier > 0.019 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.08 m0
Max eff. mass 0.24 m0
DOS eff. mass 0.15 m0
Crystal coordinates [0.499, 0.001]
Warping parameter 0.015
Barrier height > 41.3 meV
Distance to barrier > 0.019 Å-1

ZAlij ux uy uz
Px 2.15 0.00 0.00
Py 0.00 2.15 -0.00
Pz -0.00 0.00 0.26
ZSeij ux uy uz
Px -2.15 -0.00 -0.00
Py -0.00 -2.15 0.00
Pz 0.00 -0.00 -0.26
ZSeij ux uy uz
Px -2.15 -0.00 -0.00
Py -0.00 -2.15 0.00
Pz 0.00 0.00 -0.26
ZAlij ux uy uz
Px 2.15 0.00 0.00
Py 0.00 2.15 -0.00
Pz -0.00 0.00 0.26

Atom No. Chemical symbol Charges [|e|]
0 Al 1.27
1 Se -1.40
2 Se -1.40
3 Al 1.54

AB/2AlSe/2/rpa-pol-x.png AB/2AlSe/2/rpa-pol-z.png
AB/2AlSe/2/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 3.486
Interband polarizability (y) [Å] 3.486
Interband polarizability (z) [Å] 0.516
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000

AB/2AlSe/2/ir-pol-x.png AB/2AlSe/2/ir-pol-z.png
AB/2AlSe/2/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 1.81
Phonons only (y) 1.81
Phonons only (z) 0.02
Total (phonons + electrons) (x) 5.30
Total (phonons + electrons) (y) 5.30
Total (phonons + electrons) (z) 0.54

AB/2AlSe/2/Raman.png
Mode Frequency (1/cm) Degeneracy
Mode 1 0.1 3
Mode 2 60.7 2
Mode 3 123.2 1
Mode 4 292.7 3
Mode 5 294.7 1
Mode 6 325.7 1
Mode 7 458.9 1

Miscellaneous details
Unique ID 2AlSe-2
Number of atoms 4
Number of species 2
Formula Al2Se2
Reduced formula AlSe
Stoichiometry AB
Unit cell area [Å2] 12.454
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB/AlSe/Al2Se2-136900211245
Old uid Al2Se2-136900211245
Space group (bulk in AA-stacking) P-3m1
Space group number (bulk in AA-stacking) 164
Point group -3m
Inversion symmetry Yes
Layer group number 72
Layer group p-3m1
2D Bravais type Hexagonal (hp)
Thickness [Å] 4.899
Structure origin original03-18
Band gap (PBE) [eV] 2.138
Direct band gap (PBE) [eV] 2.710
gap_dir_nosoc 2.725
Vacuum level [eV] 3.800
Fermi level wrt. vacuum (PBE) [eV] -4.723
Valence band maximum wrt. vacuum (PBE) [eV] -5.792
Conduction band minimum wrt. vacuum (PBE) [eV] -3.654
minhessianeig -0.000
Dynamically stable Yes
Band gap (HSE06) [eV] 2.866
Miscellaneous details
Direct band gap (HSE06) [eV] 3.515
Fermi level wrt. vacuum (HSE) [eV] -4.472
Valence band maximum wrt. vacuum (HSE06) [eV] -6.283
Conduction band minimum wrt. vacuum (HSE06) [eV] -3.417
Band gap (G₀W₀) [eV] 3.738
Direct band gap (G₀W₀) [eV] 4.349
Fermi level wrt. vacuum (G₀W₀) [eV] -4.543
Valence band maximum wrt. vacuum (G₀W₀) [eV] -7.036
Conduction band minimum wrt. vacuum (G₀W₀) [eV] -3.297
Interband polarizability (x) [Å] 3.486
Interband polarizability (y) [Å] 3.486
Interband polarizability (z) [Å] 0.516
Static polarizability (phonons) (x) [Å] 1.813
Static polarizability (phonons + electrons) (x) [Å] 5.298
Static polarizability (phonons) (y) [Å] 1.812
Static polarizability (phonons + electrons) (y) [Å] 5.299
Static polarizability (phonons) (z) [Å] 0.021
Static polarizability (phonons + electrons) (z) [Å] 0.537
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000
Energy [eV] -17.287
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.006
Heat of formation [eV/atom] -0.711
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