Structure info | |
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Layer group | p2/m11 |
Layer group number | 14 |
Structure origin | original03-18 |
Stability | |
---|---|
Energy above convex hull [eV/atom] | 0.101 |
Heat of formation [eV/atom] | -0.040 |
Dynamically stable | Yes |
Basic properties | |
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Magnetic | No |
Band gap (PBE) [eV] | 0.447 |
Band gap (HSE06) [eV] | 1.116 |
Symmetries | |
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2D Bravais type | Rectangular (op) |
Layer group number | 14 |
Layer group | p2/m11 |
Space group number (bulk in AA-stacking) | 10 |
Space group (bulk in AA-stacking) | P2/m |
Point group | 2/m |
Inversion symmetry | Yes |
Structure data | |
---|---|
Formula | Cu2Se2 |
Stoichiometry | AB |
Number of atoms | 4 |
Unit cell area [Å2] | 18.266 |
Thickness [Å] | 2.770 |
Cu2Se2 (2CuSe-4) | |
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Heat of formation [eV/atom] | -0.04 |
Energy above convex hull [eV/atom] | 0.10 |
Monolayers from C2DB | |
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Se2Cu3 (1Se2Cu3-1) | -0.11 eV/atom |
Se2Cu4 (2SeCu2-1) | -0.11 eV/atom |
Cu2Se2 (2CuSe-1) | -0.09 eV/atom |
Cu2Se2 (2CuSe-2) | -0.08 eV/atom |
Cu2Se2 (2CuSe-3) | -0.07 eV/atom |
Se5Cu6 (1Se5Cu6-1) | -0.07 eV/atom |
Se2Cu4 (2SeCu2-2) | -0.04 eV/atom |
Cu2Se2, (2CuSe-4) | -0.04 eV/atom |
Cu2Se4 (2CuSe2-1) | -0.00 eV/atom |
Cu2Se2 (2CuSe-5) | 0.02 eV/atom |
CuSe2 (1CuSe2-1) | 0.03 eV/atom |
Cu2Se4 (2CuSe2-2) | 0.10 eV/atom |
CuSe2 (1CuSe2-2) | 0.12 eV/atom |
Cu2Se2 (2CuSe-6) | 0.12 eV/atom |
SeCu2 (1SeCu2-1) | 0.14 eV/atom |
CuSe2 (1CuSe2-3) | 0.17 eV/atom |
Se2 (2Se-1) | 0.21 eV/atom |
Se2 (2Se-2) | 0.29 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -0.00 |
DVB [eV] | xx | yy | xy |
Γ | 0.56 | -3.70 | 0.00 |
X | -1.98 | -1.84 | 0.00 |
S | -2.62 | 0.68 | 0.00 |
Y | -4.44 | -0.20 | -0.00 |
kVBM | -4.44 | -0.20 | -0.00 |
xx | yy | xy | |
Band gap [eV] | 5.80 | 0.71 | 0.00 |
DCB [eV] | xx | yy | xy |
Γ | -5.52 | 0.99 | -0.00 |
X | -0.82 | 0.26 | -0.00 |
S | -0.26 | 1.37 | -0.00 |
Y | -6.03 | 0.46 | 0.00 |
kCBM | 1.37 | 0.51 | 0.00 |
Cij (N/m) | xx | yy | xy |
xx | 40.58 | -1.30 | -0.00 |
yy | -0.68 | 2.81 | -0.00 |
xy | 0.00 | 0.00 | 1.92 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 1.92 N/m |
Eigenvalue 1 | 2.78 N/m |
Eigenvalue 2 | 40.61 N/m |
Key values [eV] | |
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Band gap (PBE) | 0.447 |
Direct band gap (PBE) | 0.977 |
Valence band maximum wrt. vacuum (PBE) | -5.413 |
Conduction band minimum wrt. vacuum (PBE) | -4.966 |
Key values [eV] | |
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Band gap (HSE06) | 1.116 |
Direct band gap (HSE06) | 1.654 |
Valence band maximum wrt. vacuum (HSE06) | -6.278 |
Conduction band minimum wrt. vacuum (HSE06) | -5.162 |
Property (VBM) | Value |
---|---|
Min eff. mass | 0.42 m0 |
Max eff. mass | 0.93 m0 |
DOS eff. mass | 0.63 m0 |
Crystal coordinates | [0.000, 0.500] |
Warping parameter | -0.001 |
Barrier height | > 83.2 meV |
Distance to barrier | > 0.0236 Å-1 |
Property (CBM) | Value |
---|---|
Min eff. mass | 0.31 m0 |
Max eff. mass | 2.17 m0 |
DOS eff. mass | 0.81 m0 |
Crystal coordinates | [0.245, 0.000] |
Warping parameter | 0.003 |
Barrier height | > 34.3 meV |
Distance to barrier | > 0.0237 Å-1 |
ZCuij | ux | uy | uz |
Px | 0.30 | -0.00 | -0.00 |
Py | -0.00 | 0.16 | -0.21 |
Pz | -0.00 | 0.08 | 0.06 |
ZCuij | ux | uy | uz |
Px | 2.04 | -0.00 | -0.00 |
Py | -0.00 | 0.19 | -0.17 |
Pz | -0.00 | -0.04 | -0.02 |
ZSeij | ux | uy | uz |
Px | -1.17 | 0.00 | -0.00 |
Py | 0.00 | -0.18 | 0.19 |
Pz | -0.00 | -0.02 | -0.02 |
ZSeij | ux | uy | uz |
Px | -1.17 | -0.00 | 0.00 |
Py | -0.00 | -0.18 | 0.19 |
Pz | 0.00 | -0.02 | -0.02 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | Cu | 0.31 |
1 | Se | -0.36 |
2 | Cu | 0.40 |
3 | Se | -0.36 |
Properties | |
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Interband polarizability (x) [Å] | 8.171 |
Interband polarizability (y) [Å] | 2.760 |
Interband polarizability (z) [Å] | 0.343 |
Plasma frequency (x) [eV Å0.5] | 0.000 |
Plasma frequency (y) [eV Å0.5] | 0.000 |
Static polarizability [Å] | |
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Phonons only (x) | 0.33 |
Phonons only (y) | 0.07 |
Phonons only (z) | 0.00 |
Total (phonons + electrons) (x) | 8.50 |
Total (phonons + electrons) (y) | 2.83 |
Total (phonons + electrons) (z) | 0.34 |
Exciton binding energy (BSE) [eV] | 0.86 |
Miscellaneous details | |
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Unique ID | 2CuSe-4 |
Number of atoms | 4 |
Number of species | 2 |
Formula | Cu2Se2 |
Reduced formula | CuSe |
Stoichiometry | AB |
Unit cell area [Å2] | 18.266 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/tree/AB/CuSe/Cu2Se2-0fb3eda814f3 |
Old uid | Cu2Se2-0fb3eda814f3 |
Space group (bulk in AA-stacking) | P2/m |
Space group number (bulk in AA-stacking) | 10 |
Point group | 2/m |
Inversion symmetry | Yes |
Layer group number | 14 |
Layer group | p2/m11 |
2D Bravais type | Rectangular (op) |
Thickness [Å] | 2.770 |
Structure origin | original03-18 |
Band gap (PBE) [eV] | 0.447 |
Direct band gap (PBE) [eV] | 0.977 |
gap_dir_nosoc | 0.989 |
Vacuum level [eV] | 2.595 |
Fermi level wrt. vacuum (PBE) [eV] | -5.189 |
Valence band maximum wrt. vacuum (PBE) [eV] | -5.413 |
Conduction band minimum wrt. vacuum (PBE) [eV] | -4.966 |
minhessianeig | -0.003 |
Miscellaneous details | |
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Dynamically stable | Yes |
Band gap (HSE06) [eV] | 1.116 |
Direct band gap (HSE06) [eV] | 1.654 |
Fermi level wrt. vacuum (HSE) [eV] | -5.748 |
Valence band maximum wrt. vacuum (HSE06) [eV] | -6.278 |
Conduction band minimum wrt. vacuum (HSE06) [eV] | -5.162 |
E_B | 0.859 |
Interband polarizability (x) [Å] | 8.171 |
Interband polarizability (y) [Å] | 2.760 |
Interband polarizability (z) [Å] | 0.343 |
Static polarizability (phonons) (x) [Å] | 0.329 |
Static polarizability (phonons + electrons) (x) [Å] | 8.500 |
Static polarizability (phonons) (y) [Å] | 0.069 |
Static polarizability (phonons + electrons) (y) [Å] | 2.829 |
Static polarizability (phonons) (z) [Å] | 0.001 |
Static polarizability (phonons + electrons) (z) [Å] | 0.345 |
Plasma frequency (x) [eV Å0.5] | 0.000 |
Plasma frequency (y) [eV Å0.5] | 0.000 |
Energy [eV] | -14.479 |
Magnetic | No |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Energy above convex hull [eV/atom] | 0.101 |
Heat of formation [eV/atom] | -0.040 |