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Structure info
Layer group p-62m
Layer group number 79
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.174
Heat of formation [eV/atom] -0.928
Dynamically stable No
Basic properties
Magnetic No
Band gap (PBE) [eV] 2.524
Band gap (HSE06) [eV] 3.813
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 6.470 0.000 0.000 Yes
2 -3.235 5.603 0.000 Yes
3 0.000 0.000 18.063 No
Lengths [Å] 6.470 6.470 18.063
Angles [°] 90.000 90.000 120.000

Symmetries
2D Bravais type Hexagonal (hp)
Layer group number 79
Layer group p-62m
Space group number (bulk in AA-stacking) 189
Space group (bulk in AA-stacking) P-62m
Point group -6m2
Inversion symmetry No
Structure data
Formula Ga2Cl6
Stoichiometry AB3
Number of atoms 8
Unit cell area [Å2] 36.254
Thickness [Å] 3.063

Ga2Cl6 (2GaCl3-2)
Heat of formation [eV/atom] -0.93
Energy above convex hull [eV/atom] 0.17
Monolayers from C2DB
Ga2Cl6 (2GaCl3-1) -1.09 eV/atom
Ga2Cl6, (2GaCl3-2) -0.93 eV/atom
GaCl2 (1GaCl2-1) -0.80 eV/atom
GaCl2 (1GaCl2-2) -0.74 eV/atom
GaCl2 (1GaCl2-3) -0.62 eV/atom
Cl2Ga2 (2ClGa-1) -0.60 eV/atom
Ga4 (4Ga-1) 0.16 eV/atom
Bulk crystals from OQMD123
Cl6Ga2 -1.10 eV/atom
Cl16Ga8 -1.03 eV/atom
Cl4 0.00 eV/atom
Ga4 0.00 eV/atom

AB3/2GaCl3/2/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -1.02

Cij (N/m) xx yy xy
xx 22.50 -4.94 0.00
yy -4.81 22.75 0.00
xy 0.00 0.00 28.44
Stiffness tensor eigenvalues
Eigenvalue 0 17.75 N/m
Eigenvalue 1 27.50 N/m
Eigenvalue 2 28.44 N/m

Key values [eV]
Band gap (PBE) 2.524
Direct band gap (PBE) 2.562
Valence band maximum wrt. vacuum (PBE) -7.688
Conduction band minimum wrt. vacuum (PBE) -5.164
DOS BZ

Key values [eV]
Band gap (HSE06) 3.813
Direct band gap (HSE06) 3.813
Valence band maximum wrt. vacuum (HSE06) -8.646
Conduction band minimum wrt. vacuum (HSE06) -4.833

VBM
Property (VBM) Value
Min eff. mass 1.05 m0
Max eff. mass 3.27 m0
DOS eff. mass 1.85 m0
Crystal coordinates [0.152, -0.000]
Warping parameter -0.001
Barrier height > 3.8 meV
Distance to barrier > 0.0115 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.88 m0
Max eff. mass 0.88 m0
DOS eff. mass 0.88 m0
Crystal coordinates [-0.000, 0.000]
Warping parameter 0.000
Barrier height > 21.1 meV
Distance to barrier > 0.0112 Å-1

Atom No. Chemical symbol Charges [|e|]
0 Ga 1.53
1 Ga 1.53
2 Cl -0.51
3 Cl -0.51
4 Cl -0.51
5 Cl -0.51
6 Cl -0.51
7 Cl -0.51

AB3/2GaCl3/2/rpa-pol-x.png AB3/2GaCl3/2/rpa-pol-z.png
AB3/2GaCl3/2/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 1.092
Interband polarizability (y) [Å] 1.092
Interband polarizability (z) [Å] 0.309
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000

AB3/2GaCl3/2/shg1.png
Element Relations
xxx xxx=-xyy=-yxy=-yyx
Others 0=yyy=xxz=xxy=xyz=xzx=xzy=xzz=yxx=yxz=xyx=yyz=yzx= yzy=yzz=zxx=zxy=zxz=zyx=zyy=zyz=zzx=zzy=zzz
AB3/2GaCl3/2/shg2.png

Miscellaneous details
Unique ID 2GaCl3-2
Number of atoms 8
Number of species 2
Formula Ga2Cl6
Reduced formula GaCl3
Stoichiometry AB3
Unit cell area [Å2] 36.254
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB3/GaCl3/Ga2Cl6-c306553fa81a
Old uid Ga2Cl6-c306553fa81a
Space group (bulk in AA-stacking) P-62m
Space group number (bulk in AA-stacking) 189
Point group -6m2
Inversion symmetry No
Layer group number 79
Layer group p-62m
2D Bravais type Hexagonal (hp)
Thickness [Å] 3.063
Structure origin original03-18
Band gap (PBE) [eV] 2.524
Direct band gap (PBE) [eV] 2.562
gap_dir_nosoc 2.569
Vacuum level [eV] 2.569
Miscellaneous details
Fermi level wrt. vacuum (PBE) [eV] -6.426
Valence band maximum wrt. vacuum (PBE) [eV] -7.688
Conduction band minimum wrt. vacuum (PBE) [eV] -5.164
minhessianeig -1.016
Dynamically stable No
Band gap (HSE06) [eV] 3.813
Direct band gap (HSE06) [eV] 3.813
Fermi level wrt. vacuum (HSE) [eV] -6.740
Valence band maximum wrt. vacuum (HSE06) [eV] -8.646
Conduction band minimum wrt. vacuum (HSE06) [eV] -4.833
Interband polarizability (x) [Å] 1.092
Interband polarizability (y) [Å] 1.092
Interband polarizability (z) [Å] 0.309
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000
Energy [eV] -23.942
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.174
Heat of formation [eV/atom] -0.928
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