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Structure info
Layer group pm2_1n
Layer group number 32
Structure origin original03-18
ICSD id of parent bulk structure ICSD 638005
Stability
Energy above convex hull [eV/atom] 0.054
Heat of formation [eV/atom] -0.039
Dynamically stable Yes
Basic properties
Magnetic No
Ferroelectric Yes
Band gap (PBE) [eV] 0.815
Band gap (HSE06) [eV] 1.103
Band gap (G₀W₀) [eV] 1.286
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 4.376 -0.000 0.000 Yes
2 -0.000 4.230 0.000 Yes
3 -0.000 0.000 17.110 No
Lengths [Å] 4.376 4.230 17.110
Angles [°] 90.000 90.000 90.000

Symmetries
2D Bravais type Rectangular (op)
Layer group number 32
Layer group pm2_1n
Space group number (bulk in AA-stacking) 31
Space group (bulk in AA-stacking) Pmn2_1
Point group mm2
Inversion symmetry No
Structure data
Formula Te2Ge2
Stoichiometry AB
Number of atoms 4
Unit cell area [Å2] 18.508
Thickness [Å] 3.036

Ge2Te2 (2GeTe-1)
Heat of formation [eV/atom] -0.04
Energy above convex hull [eV/atom] 0.05
Monolayers from C2DB
Te2Ge2, (2GeTe-1) -0.04 eV/atom
TeGe (1GeTe-1) -0.01 eV/atom
Te2Ge2 (2GeTe-2) -0.00 eV/atom
Te2Ge (1GeTe2-1) 0.07 eV/atom
Te2Ge (1GeTe2-2) 0.08 eV/atom
Te4Ge2 (2GeTe2-1) 0.14 eV/atom
Te2 (2Te-1) 0.16 eV/atom
Te2Ge (1GeTe2-3) 0.20 eV/atom
Te4Ge2 (2GeTe2-2) 0.27 eV/atom
Te2 (2Te-2) 0.29 eV/atom
Te2Ge2 (2GeTe-3) 0.38 eV/atom
Ge2 (2Ge-1) 0.48 eV/atom
Ge2 (2Ge-2) 0.49 eV/atom
Bulk crystals from OQMD123
TeGe -0.09 eV/atom
Ge2 0.00 eV/atom
Te3 0.00 eV/atom

materials/AB/2GeTe/1/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

DVB [eV] xx yy xy
Γ 2.11 1.79 0.00
X -2.02 -9.84 0.00
S 2.64 0.88 -0.20
Y -7.99 -0.43 0.00
kVBM -3.22 -10.40 0.00
xx yy xy
Band gap [eV] 2.46 13.68 -0.00
DCB [eV] xx yy xy
Γ -3.46 -1.88 0.00
X 3.76 -5.59 0.00
S -3.60 -0.34 -0.34
Y -0.37 3.07 -0.00
kCBM -0.76 3.28 -0.00

Cij (N/m) xx yy xy
xx 23.97 13.54 0.01
yy 15.00 47.74 0.01
xy 0.00 -0.00 49.01
Stiffness tensor eigenvalues
Eigenvalue 0 17.30 N/m
Eigenvalue 1 49.01 N/m
Eigenvalue 2 54.41 N/m

cij [e/Å] xx yy xy
x 1.12 0.00 -0.00
y 0.00 -0.00 1.14
z 0.00 -0.00 0.00
cijclamped [e/Å] xx yy xy
x -0.07 -0.47 0.00
y 0.00 -0.00 -0.48
z -0.00 -0.00 0.00

Key values [eV]
Band gap (PBE) 0.815
Direct band gap (PBE) 0.872
Valence band maximum wrt. vacuum (PBE) -4.202
Conduction band minimum wrt. vacuum (PBE) -3.387
DOS BZ

Key values [eV]
Band gap (HSE06) 1.103
Direct band gap (HSE06) 1.140
Valence band maximum wrt. vacuum (HSE06) -4.313
Conduction band minimum wrt. vacuum (HSE06) -3.210

Key values [eV]
Band gap (G₀W₀) 1.286
Direct band gap (G₀W₀) 1.361
Valence band maximum wrt. vacuum (G₀W₀) -4.633
Conduction band minimum wrt. vacuum (G₀W₀) -3.347

VBM
Property (VBM) Value
Min eff. mass 0.06 m0
Max eff. mass 0.14 m0
DOS eff. mass 0.09 m0
Crystal coordinates [-0.378, -0.024]
Warping parameter -0.002
Barrier height 0.0 meV
Distance to barrier 0 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.05 m0
Max eff. mass 0.23 m0
DOS eff. mass 0.11 m0
Crystal coordinates [-0.000, -0.407]
Warping parameter 0.001
Barrier height > 30.9 meV
Distance to barrier > 0.0164 Å-1

ZTeij ux uy uz
Px -4.20 -0.00 0.05
Py -0.00 -5.68 -0.00
Pz -0.01 -0.00 -0.16
ZGeij ux uy uz
Px 4.20 -0.00 0.98
Py -0.00 5.68 0.00
Pz 0.06 -0.00 0.16
ZTeij ux uy uz
Px -4.20 0.00 -0.05
Py 0.00 -5.68 -0.00
Pz 0.01 -0.00 -0.16
ZGeij ux uy uz
Px 4.20 0.00 -0.98
Py 0.00 5.68 0.00
Pz -0.06 0.00 0.16

Atom No. Chemical symbol Charges [|e|]
0 Te -0.40
1 Te -0.40
2 Ge 0.40
3 Ge 0.40

Spontaneous polarization vector component [pC/m]
Px 314.243
Py -0.001
Pz -0.001

materials/AB/2GeTe/1/rpa-pol-x.png materials/AB/2GeTe/1/rpa-pol-z.png
materials/AB/2GeTe/1/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 15.568
Interband polarizability (y) [Å] 18.472
Interband polarizability (z) [Å] 0.426
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000

materials/AB/2GeTe/1/ir-pol-x.png materials/AB/2GeTe/1/ir-pol-z.png
materials/AB/2GeTe/1/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 14.68
Phonons only (y) 49.39
Phonons only (z) 0.01
Total (phonons + electrons) (x) 30.25
Total (phonons + electrons) (y) 67.86
Total (phonons + electrons) (z) 0.44

materials/AB/2GeTe/1/absx.png
Exciton binding energy (BSE) [eV] 0.46
materials/AB/2GeTe/1/absz.png

materials/AB/2GeTe/1/shg1.png materials/AB/2GeTe/1/shg3.png materials/AB/2GeTe/1/shg5.png
Element Relations
xxx
xyy
xzz
yxy yxy=yyx
Others 0=yyy=xxz=xxy=xyz=xzx=xzy=yxx=yxz=xyx=yyz=yzx=yzy= yzz=zxx=zxy=zyx=zyy=zyz=zzy=zzz
zxz zxz=zzx
materials/AB/2GeTe/1/shg2.png materials/AB/2GeTe/1/shg4.png materials/AB/2GeTe/1/shg6.png

Shift-current Shift-current Shift-current
Shift-current Shift-current
Element Relations
xxx
xyy
xzz
yxy yxy=yyx
Others 0=yyy=xxz=xyx=xyz=xzx=xzy=yxx=yxz=xxy=yyz=yzx=yzy= yzz=zxx=zxy=zyx=zyy=zyz=zzy=zzz
zxz zxz=zzx

Miscellaneous details
Unique ID 2GeTe-1
Number of atoms 4
Number of species 2
Formula Te2Ge2
Reduced formula TeGe
Stoichiometry AB
Unit cell area [Å2] 18.508
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB/GeTe/Ge2Te2-3b5fa8791e0d
Old uid Ge2Te2-3b5fa8791e0d
Space group (bulk in AA-stacking) Pmn2_1
Space group number (bulk in AA-stacking) 31
Point group mm2
Inversion symmetry No
Layer group number 32
Layer group pm2_1n
2D Bravais type Rectangular (op)
Thickness [Å] 3.036
Structure origin original03-18
Band gap (PBE) [eV] 0.815
Direct band gap (PBE) [eV] 0.872
gap_dir_nosoc 0.916
Vacuum level [eV] 3.573
Fermi level wrt. vacuum (PBE) [eV] -3.795
Valence band maximum wrt. vacuum (PBE) [eV] -4.202
Conduction band minimum wrt. vacuum (PBE) [eV] -3.387
minhessianeig -0.000
Dynamically stable Yes
Band gap (HSE06) [eV] 1.103
Direct band gap (HSE06) [eV] 1.140
Fermi level wrt. vacuum (HSE) [eV] -3.793
Miscellaneous details
Valence band maximum wrt. vacuum (HSE06) [eV] -4.313
Conduction band minimum wrt. vacuum (HSE06) [eV] -3.210
Band gap (G₀W₀) [eV] 1.286
Direct band gap (G₀W₀) [eV] 1.361
Fermi level wrt. vacuum (G₀W₀) [eV] -3.994
Valence band maximum wrt. vacuum (G₀W₀) [eV] -4.633
Conduction band minimum wrt. vacuum (G₀W₀) [eV] -3.347
E_B 0.464
Interband polarizability (x) [Å] 15.568
Interband polarizability (y) [Å] 18.472
Interband polarizability (z) [Å] 0.426
Static polarizability (phonons) (x) [Å] 14.680
Static polarizability (phonons + electrons) (x) [Å] 30.248
Static polarizability (phonons) (y) [Å] 49.390
Static polarizability (phonons + electrons) (y) [Å] 67.862
Static polarizability (phonons) (z) [Å] 0.009
Static polarizability (phonons + electrons) (z) [Å] 0.436
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000
Energy [eV] -15.598
ICSD id of parent bulk structure ICSD 638005
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Ferroelectric Yes
Spontaneous polarization [pC/m] 314.243
Energy above convex hull [eV/atom] 0.054
Heat of formation [eV/atom] -0.039
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