Structure info | |
---|---|
Layer group | pm2_1n |
Layer group number | 32 |
Structure origin | original03-18 |
ICSD id of parent bulk structure | ICSD 638005 |
Stability | |
---|---|
Energy above convex hull [eV/atom] | 0.054 |
Heat of formation [eV/atom] | -0.039 |
Dynamically stable | Yes |
Basic properties | |
---|---|
Magnetic | No |
Ferroelectric | Yes |
Band gap (PBE) [eV] | 0.815 |
Band gap (HSE06) [eV] | 1.103 |
Band gap (G₀W₀) [eV] | 1.286 |
Symmetries | |
---|---|
2D Bravais type | Rectangular (op) |
Layer group number | 32 |
Layer group | pm2_1n |
Space group number (bulk in AA-stacking) | 31 |
Space group (bulk in AA-stacking) | Pmn2_1 |
Point group | mm2 |
Inversion symmetry | No |
Structure data | |
---|---|
Formula | Te2Ge2 |
Stoichiometry | AB |
Number of atoms | 4 |
Unit cell area [Å2] | 18.508 |
Thickness [Å] | 3.036 |
Ge2Te2 (2GeTe-1) | |
---|---|
Heat of formation [eV/atom] | -0.04 |
Energy above convex hull [eV/atom] | 0.05 |
Monolayers from C2DB | |
---|---|
Te2Ge2, (2GeTe-1) | -0.04 eV/atom |
TeGe (1GeTe-1) | -0.01 eV/atom |
Te2Ge2 (2GeTe-2) | -0.00 eV/atom |
Te2Ge (1GeTe2-1) | 0.07 eV/atom |
Te2Ge (1GeTe2-2) | 0.08 eV/atom |
Te4Ge2 (2GeTe2-1) | 0.14 eV/atom |
Te2 (2Te-1) | 0.16 eV/atom |
Te2Ge (1GeTe2-3) | 0.20 eV/atom |
Te4Ge2 (2GeTe2-2) | 0.27 eV/atom |
Te2 (2Te-2) | 0.29 eV/atom |
Te2Ge2 (2GeTe-3) | 0.38 eV/atom |
Ge2 (2Ge-1) | 0.48 eV/atom |
Ge2 (2Ge-2) | 0.49 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -0.00 |
DVB [eV] | xx | yy | xy |
Γ | 2.11 | 1.79 | 0.00 |
X | -2.02 | -9.84 | 0.00 |
S | 2.64 | 0.88 | -0.20 |
Y | -7.99 | -0.43 | 0.00 |
kVBM | -3.22 | -10.40 | 0.00 |
xx | yy | xy | |
Band gap [eV] | 2.46 | 13.68 | -0.00 |
DCB [eV] | xx | yy | xy |
Γ | -3.46 | -1.88 | 0.00 |
X | 3.76 | -5.59 | 0.00 |
S | -3.60 | -0.34 | -0.34 |
Y | -0.37 | 3.07 | -0.00 |
kCBM | -0.76 | 3.28 | -0.00 |
Cij (N/m) | xx | yy | xy |
xx | 23.97 | 13.54 | 0.01 |
yy | 15.00 | 47.74 | 0.01 |
xy | 0.00 | -0.00 | 49.01 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 17.30 N/m |
Eigenvalue 1 | 49.01 N/m |
Eigenvalue 2 | 54.41 N/m |
cij [e/Å] | xx | yy | xy |
x | 1.12 | 0.00 | -0.00 |
y | 0.00 | -0.00 | 1.14 |
z | 0.00 | -0.00 | 0.00 |
cijclamped [e/Å] | xx | yy | xy |
x | -0.07 | -0.47 | 0.00 |
y | 0.00 | -0.00 | -0.48 |
z | -0.00 | -0.00 | 0.00 |
Key values [eV] | |
---|---|
Band gap (PBE) | 0.815 |
Direct band gap (PBE) | 0.872 |
Valence band maximum wrt. vacuum (PBE) | -4.202 |
Conduction band minimum wrt. vacuum (PBE) | -3.387 |
Key values [eV] | |
---|---|
Band gap (HSE06) | 1.103 |
Direct band gap (HSE06) | 1.140 |
Valence band maximum wrt. vacuum (HSE06) | -4.313 |
Conduction band minimum wrt. vacuum (HSE06) | -3.210 |
Key values [eV] | |
---|---|
Band gap (G₀W₀) | 1.286 |
Direct band gap (G₀W₀) | 1.361 |
Valence band maximum wrt. vacuum (G₀W₀) | -4.633 |
Conduction band minimum wrt. vacuum (G₀W₀) | -3.347 |
Property (VBM) | Value |
---|---|
Min eff. mass | 0.06 m0 |
Max eff. mass | 0.14 m0 |
DOS eff. mass | 0.09 m0 |
Crystal coordinates | [-0.378, -0.024] |
Warping parameter | -0.002 |
Barrier height | 0.0 meV |
Distance to barrier | 0 Å-1 |
Property (CBM) | Value |
---|---|
Min eff. mass | 0.05 m0 |
Max eff. mass | 0.23 m0 |
DOS eff. mass | 0.11 m0 |
Crystal coordinates | [-0.000, -0.407] |
Warping parameter | 0.001 |
Barrier height | > 30.9 meV |
Distance to barrier | > 0.0164 Å-1 |
ZTeij | ux | uy | uz |
Px | -4.20 | -0.00 | 0.05 |
Py | -0.00 | -5.68 | -0.00 |
Pz | -0.01 | -0.00 | -0.16 |
ZGeij | ux | uy | uz |
Px | 4.20 | -0.00 | 0.98 |
Py | -0.00 | 5.68 | 0.00 |
Pz | 0.06 | -0.00 | 0.16 |
ZTeij | ux | uy | uz |
Px | -4.20 | 0.00 | -0.05 |
Py | 0.00 | -5.68 | -0.00 |
Pz | 0.01 | -0.00 | -0.16 |
ZGeij | ux | uy | uz |
Px | 4.20 | 0.00 | -0.98 |
Py | 0.00 | 5.68 | 0.00 |
Pz | -0.06 | 0.00 | 0.16 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | Te | -0.40 |
1 | Te | -0.40 |
2 | Ge | 0.40 |
3 | Ge | 0.40 |
Spontaneous polarization vector component [pC/m] | |
---|---|
Px | 314.243 |
Py | -0.001 |
Pz | -0.001 |
Properties | |
---|---|
Interband polarizability (x) [Å] | 15.568 |
Interband polarizability (y) [Å] | 18.472 |
Interband polarizability (z) [Å] | 0.426 |
Plasma frequency (x) [eV Å0.5] | 0.000 |
Plasma frequency (y) [eV Å0.5] | 0.000 |
Static polarizability [Å] | |
---|---|
Phonons only (x) | 14.68 |
Phonons only (y) | 49.39 |
Phonons only (z) | 0.01 |
Total (phonons + electrons) (x) | 30.25 |
Total (phonons + electrons) (y) | 67.86 |
Total (phonons + electrons) (z) | 0.44 |
Exciton binding energy (BSE) [eV] | 0.46 |
Element | Relations |
---|---|
xxx | |
xyy | |
xzz | |
yxy | yxy=yyx |
Others | 0=yyy=xxz=xxy=xyz=xzx=xzy=yxx=yxz=xyx=yyz=yzx=yzy= yzz=zxx=zxy=zyx=zyy=zyz=zzy=zzz |
zxz | zxz=zzx |
Element | Relations |
---|---|
xxx | |
xyy | |
xzz | |
yxy | yxy=yyx |
Others | 0=yyy=xxz=xyx=xyz=xzx=xzy=yxx=yxz=xxy=yyz=yzx=yzy= yzz=zxx=zxy=zyx=zyy=zyz=zzy=zzz |
zxz | zxz=zzx |
Miscellaneous details | |
---|---|
Unique ID | 2GeTe-1 |
Number of atoms | 4 |
Number of species | 2 |
Formula | Te2Ge2 |
Reduced formula | TeGe |
Stoichiometry | AB |
Unit cell area [Å2] | 18.508 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/tree/AB/GeTe/Ge2Te2-3b5fa8791e0d |
Old uid | Ge2Te2-3b5fa8791e0d |
Space group (bulk in AA-stacking) | Pmn2_1 |
Space group number (bulk in AA-stacking) | 31 |
Point group | mm2 |
Inversion symmetry | No |
Layer group number | 32 |
Layer group | pm2_1n |
2D Bravais type | Rectangular (op) |
Thickness [Å] | 3.036 |
Structure origin | original03-18 |
Band gap (PBE) [eV] | 0.815 |
Direct band gap (PBE) [eV] | 0.872 |
gap_dir_nosoc | 0.916 |
Vacuum level [eV] | 3.573 |
Fermi level wrt. vacuum (PBE) [eV] | -3.795 |
Valence band maximum wrt. vacuum (PBE) [eV] | -4.202 |
Conduction band minimum wrt. vacuum (PBE) [eV] | -3.387 |
minhessianeig | -0.000 |
Dynamically stable | Yes |
Band gap (HSE06) [eV] | 1.103 |
Direct band gap (HSE06) [eV] | 1.140 |
Fermi level wrt. vacuum (HSE) [eV] | -3.793 |
Miscellaneous details | |
---|---|
Valence band maximum wrt. vacuum (HSE06) [eV] | -4.313 |
Conduction band minimum wrt. vacuum (HSE06) [eV] | -3.210 |
Band gap (G₀W₀) [eV] | 1.286 |
Direct band gap (G₀W₀) [eV] | 1.361 |
Fermi level wrt. vacuum (G₀W₀) [eV] | -3.994 |
Valence band maximum wrt. vacuum (G₀W₀) [eV] | -4.633 |
Conduction band minimum wrt. vacuum (G₀W₀) [eV] | -3.347 |
E_B | 0.464 |
Interband polarizability (x) [Å] | 15.568 |
Interband polarizability (y) [Å] | 18.472 |
Interband polarizability (z) [Å] | 0.426 |
Static polarizability (phonons) (x) [Å] | 14.680 |
Static polarizability (phonons + electrons) (x) [Å] | 30.248 |
Static polarizability (phonons) (y) [Å] | 49.390 |
Static polarizability (phonons + electrons) (y) [Å] | 67.862 |
Static polarizability (phonons) (z) [Å] | 0.009 |
Static polarizability (phonons + electrons) (z) [Å] | 0.436 |
Plasma frequency (x) [eV Å0.5] | 0.000 |
Plasma frequency (y) [eV Å0.5] | 0.000 |
Energy [eV] | -15.598 |
ICSD id of parent bulk structure | ICSD 638005 |
Magnetic | No |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Ferroelectric | Yes |
Spontaneous polarization [pC/m] | 314.243 |
Energy above convex hull [eV/atom] | 0.054 |
Heat of formation [eV/atom] | -0.039 |