Structure info | |
---|---|
Layer group | p4/mmm |
Layer group number | 61 |
Structure origin | original03-18 |
Stability | |
---|---|
Energy above convex hull [eV/atom] | 0.469 |
Heat of formation [eV/atom] | 0.375 |
Dynamically stable | No |
Basic properties | |
---|---|
Magnetic | No |
Band gap (PBE) [eV] | 0.000 |
Symmetries | |
---|---|
2D Bravais type | Square (tp) |
Layer group number | 61 |
Layer group | p4/mmm |
Space group number (bulk in AA-stacking) | 123 |
Space group (bulk in AA-stacking) | P4/mmm |
Point group | 4/mmm |
Inversion symmetry | Yes |
Structure data | |
---|---|
Formula | Te2Ge2 |
Stoichiometry | AB |
Number of atoms | 4 |
Unit cell area [Å2] | 33.005 |
Thickness [Å] | 0.000 |
Ge2Te2 (2GeTe-3) | |
---|---|
Heat of formation [eV/atom] | 0.38 |
Energy above convex hull [eV/atom] | 0.47 |
Monolayers from C2DB | |
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Te2Ge2 (2GeTe-1) | -0.04 eV/atom |
TeGe (1GeTe-1) | -0.01 eV/atom |
Te2Ge2 (2GeTe-2) | -0.00 eV/atom |
Te2Ge (1GeTe2-1) | 0.07 eV/atom |
Te2Ge (1GeTe2-2) | 0.08 eV/atom |
Te4Ge2 (2GeTe2-1) | 0.14 eV/atom |
Te2 (2Te-1) | 0.16 eV/atom |
Te2Ge (1GeTe2-3) | 0.20 eV/atom |
Te4Ge2 (2GeTe2-2) | 0.27 eV/atom |
Te2 (2Te-2) | 0.29 eV/atom |
Te2Ge2, (2GeTe-3) | 0.38 eV/atom |
Ge2 (2Ge-1) | 0.48 eV/atom |
Ge2 (2Ge-2) | 0.49 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -3.11 |
Cij (N/m) | xx | yy | xy |
xx | -9.41 | 51.05 | -0.00 |
yy | 51.05 | -9.41 | -0.00 |
xy | 0.00 | 0.00 | -24.82 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | -60.46 N/m |
Eigenvalue 1 | -24.82 N/m |
Eigenvalue 2 | 41.64 N/m |
Key values [eV] | |
---|---|
Band gap (PBE) | 0.000 |
Direct band gap (PBE) | 0.000 |
Fermi level wrt. vacuum (PBE) | -4.464 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | Ge | 0.37 |
1 | Ge | 0.37 |
2 | Te | -0.37 |
3 | Te | -0.37 |
Properties | |
---|---|
Interband polarizability (x) [Å] | 13.988 |
Interband polarizability (y) [Å] | 13.988 |
Interband polarizability (z) [Å] | 0.533 |
Plasma frequency (x) [eV Å0.5] | 8.768 |
Plasma frequency (y) [eV Å0.5] | 8.768 |
Miscellaneous details | |
---|---|
Unique ID | 2GeTe-3 |
Number of atoms | 4 |
Number of species | 2 |
Formula | Te2Ge2 |
Reduced formula | TeGe |
Stoichiometry | AB |
Unit cell area [Å2] | 33.005 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/tree/AB/GeTe/Ge2Te2-8ef318b354de |
Old uid | Ge2Te2-8ef318b354de |
Space group (bulk in AA-stacking) | P4/mmm |
Space group number (bulk in AA-stacking) | 123 |
Point group | 4/mmm |
Inversion symmetry | Yes |
Layer group number | 61 |
Layer group | p4/mmm |
2D Bravais type | Square (tp) |
Thickness [Å] | 0.000 |
Structure origin | original03-18 |
Band gap (PBE) [eV] | 0.000 |
Miscellaneous details | |
---|---|
Direct band gap (PBE) [eV] | 0.000 |
gap_dir_nosoc | 0.000 |
Vacuum level [eV] | 2.348 |
Fermi level wrt. vacuum (PBE) [eV] | -4.464 |
minhessianeig | -3.106 |
Dynamically stable | No |
Interband polarizability (x) [Å] | 13.988 |
Interband polarizability (y) [Å] | 13.988 |
Interband polarizability (z) [Å] | 0.533 |
Plasma frequency (x) [eV Å0.5] | 8.768 |
Plasma frequency (y) [eV Å0.5] | 8.768 |
Energy [eV] | -13.941 |
Magnetic | No |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Energy above convex hull [eV/atom] | 0.469 |
Heat of formation [eV/atom] | 0.375 |