Structure info
Layer group p4/mmm
Layer group number 61
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.469
Heat of formation [eV/atom] 0.375
Dynamically stable No
Basic properties
Magnetic No
Band gap (PBE) [eV] 0.000
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 5.745 -0.000 0.000 Yes
2 -0.000 5.745 0.000 Yes
3 0.000 0.000 15.000 No
Lengths [Å] 5.745 5.745 15.000
Angles [°] 90.000 90.000 90.000

Symmetries
2D Bravais type Square (tp)
Layer group number 61
Layer group p4/mmm
Space group number (bulk in AA-stacking) 123
Space group (bulk in AA-stacking) P4/mmm
Point group 4/mmm
Inversion symmetry Yes
Structure data
Formula Te2Ge2
Stoichiometry AB
Number of atoms 4
Unit cell area [Å2] 33.005
Thickness [Å] 0.000

Ge2Te2 (2GeTe-3)
Heat of formation [eV/atom] 0.38
Energy above convex hull [eV/atom] 0.47
Monolayers from C2DB
Te2Ge2 (2GeTe-1) -0.04 eV/atom
TeGe (1GeTe-1) -0.01 eV/atom
Te2Ge2 (2GeTe-2) -0.00 eV/atom
Te2Ge (1GeTe2-1) 0.07 eV/atom
Te2Ge (1GeTe2-2) 0.08 eV/atom
Te4Ge2 (2GeTe2-1) 0.14 eV/atom
Te2 (2Te-1) 0.16 eV/atom
Te2Ge (1GeTe2-3) 0.20 eV/atom
Te4Ge2 (2GeTe2-2) 0.27 eV/atom
Te2 (2Te-2) 0.29 eV/atom
Te2Ge2, (2GeTe-3) 0.38 eV/atom
Ge2 (2Ge-1) 0.48 eV/atom
Ge2 (2Ge-2) 0.49 eV/atom
Bulk crystals from OQMD123
TeGe -0.09 eV/atom
Ge2 0.00 eV/atom
Te3 0.00 eV/atom

materials/AB/2GeTe/3/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -3.11

Cij (N/m) xx yy xy
xx -9.41 51.05 -0.00
yy 51.05 -9.41 -0.00
xy 0.00 0.00 -24.82
Stiffness tensor eigenvalues
Eigenvalue 0 -60.46 N/m
Eigenvalue 1 -24.82 N/m
Eigenvalue 2 41.64 N/m

Key values [eV]
Band gap (PBE) 0.000
Direct band gap (PBE) 0.000
Fermi level wrt. vacuum (PBE) -4.464
DOS BZ

materials/AB/2GeTe/3/fermi_surface.png

Atom No. Chemical symbol Charges [|e|]
0 Ge 0.37
1 Ge 0.37
2 Te -0.37
3 Te -0.37

materials/AB/2GeTe/3/rpa-pol-x.png materials/AB/2GeTe/3/rpa-pol-z.png
materials/AB/2GeTe/3/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 13.988
Interband polarizability (y) [Å] 13.988
Interband polarizability (z) [Å] 0.533
Plasma frequency (x) [eV Å0.5] 8.768
Plasma frequency (y) [eV Å0.5] 8.768

Miscellaneous details
Unique ID 2GeTe-3
Number of atoms 4
Number of species 2
Formula Te2Ge2
Reduced formula TeGe
Stoichiometry AB
Unit cell area [Å2] 33.005
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB/GeTe/Ge2Te2-8ef318b354de
Old uid Ge2Te2-8ef318b354de
Space group (bulk in AA-stacking) P4/mmm
Space group number (bulk in AA-stacking) 123
Point group 4/mmm
Inversion symmetry Yes
Layer group number 61
Layer group p4/mmm
2D Bravais type Square (tp)
Thickness [Å] 0.000
Structure origin original03-18
Band gap (PBE) [eV] 0.000
Miscellaneous details
Direct band gap (PBE) [eV] 0.000
gap_dir_nosoc 0.000
Vacuum level [eV] 2.348
Fermi level wrt. vacuum (PBE) [eV] -4.464
minhessianeig -3.106
Dynamically stable No
Interband polarizability (x) [Å] 13.988
Interband polarizability (y) [Å] 13.988
Interband polarizability (z) [Å] 0.533
Plasma frequency (x) [eV Å0.5] 8.768
Plasma frequency (y) [eV Å0.5] 8.768
Energy [eV] -13.941
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.469
Heat of formation [eV/atom] 0.375
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