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Structure info
Layer group p4/mbm
Layer group number 63
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.331
Heat of formation [eV/atom] 0.269
Dynamically stable No
Basic properties
Magnetic No
Topology Z2=1,C_M=1
Band gap (PBE) [eV] 0.032
Band gap (HSE06) [eV] 0.134
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 7.333 -0.000 0.000 Yes
2 -0.000 7.339 0.000 Yes
3 0.000 0.000 16.516 No
Lengths [Å] 7.333 7.339 16.516
Angles [°] 90.000 90.000 90.000

Symmetries
2D Bravais type Square (tp)
Layer group number 63
Layer group p4/mbm
Space group number (bulk in AA-stacking) 127
Space group (bulk in AA-stacking) P4/mbm
Point group 4/mmm
Inversion symmetry Yes
Structure data
Formula Te4Ge2
Stoichiometry AB2
Number of atoms 6
Unit cell area [Å2] 53.822
Thickness [Å] 0.003

Ge2Te4 (2GeTe2-2)
Heat of formation [eV/atom] 0.27
Energy above convex hull [eV/atom] 0.33
Monolayers from C2DB
Te2Ge2 (2GeTe-1) -0.04 eV/atom
TeGe (1GeTe-1) -0.01 eV/atom
Te2Ge2 (2GeTe-2) -0.00 eV/atom
Te2Ge (1GeTe2-1) 0.07 eV/atom
Te2Ge (1GeTe2-2) 0.08 eV/atom
Te4Ge2 (2GeTe2-1) 0.14 eV/atom
Te2 (2Te-1) 0.16 eV/atom
Te2Ge (1GeTe2-3) 0.20 eV/atom
Te4Ge2, (2GeTe2-2) 0.27 eV/atom
Te2 (2Te-2) 0.29 eV/atom
Te2Ge2 (2GeTe-3) 0.38 eV/atom
Ge2 (2Ge-1) 0.48 eV/atom
Ge2 (2Ge-2) 0.49 eV/atom
Bulk crystals from OQMD123
TeGe -0.09 eV/atom
Ge2 0.00 eV/atom
Te3 0.00 eV/atom

materials/AB2/2GeTe2/2/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.83

Cij (N/m) xx yy xy
xx 30.36 18.91 -0.00
yy 18.91 30.82 0.00
xy -0.00 0.00 2.07
Stiffness tensor eigenvalues
Eigenvalue 0 2.07 N/m
Eigenvalue 1 11.68 N/m
Eigenvalue 2 49.50 N/m

Key values [eV]
Band gap (PBE) 0.032
Direct band gap (PBE) 0.174
Valence band maximum wrt. vacuum (PBE) -4.490
Conduction band minimum wrt. vacuum (PBE) -4.457
DOS BZ

Key values [eV]
Band gap (HSE06) 0.134
Direct band gap (HSE06) 0.214
Valence band maximum wrt. vacuum (HSE06) -4.473
Conduction band minimum wrt. vacuum (HSE06) -4.339

VBM
Property (VBM) Value
Min eff. mass 0.05 m0
Max eff. mass 0.06 m0
DOS eff. mass 0.06 m0
Crystal coordinates [0.139, 0.139]
Warping parameter -0.016
Barrier height > 132.0 meV
Distance to barrier > 0.0116 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.06 m0
Max eff. mass 0.11 m0
DOS eff. mass 0.08 m0
Crystal coordinates [-0.000, 0.116]
Warping parameter 0.028
Barrier height > 86.0 meV
Distance to barrier > 0.0114 Å-1

Atom No. Chemical symbol Charges [|e|]
0 Ge 0.38
1 Ge 0.38
2 Te -0.18
3 Te -0.18
4 Te -0.20
5 Te -0.20

materials/AB2/2GeTe2/2/berry-phases0.png

materials/AB2/2GeTe2/2/rpa-pol-x.png materials/AB2/2GeTe2/2/rpa-pol-z.png
materials/AB2/2GeTe2/2/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 11.379
Interband polarizability (y) [Å] 11.590
Interband polarizability (z) [Å] 0.252
Plasma frequency (x) [eV Å0.5] 4.287
Plasma frequency (y) [eV Å0.5] 4.489

Miscellaneous details
Unique ID 2GeTe2-2
Number of atoms 6
Number of species 2
Formula Te4Ge2
Reduced formula Te2Ge
Stoichiometry AB2
Unit cell area [Å2] 53.822
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB2/GeTe2/Ge2Te4-be93b1621bc7
Old uid Ge2Te4-be93b1621bc7
Space group (bulk in AA-stacking) P4/mbm
Space group number (bulk in AA-stacking) 127
Point group 4/mmm
Inversion symmetry Yes
Layer group number 63
Layer group p4/mbm
2D Bravais type Square (tp)
Thickness [Å] 0.003
Structure origin original03-18
Band gap (PBE) [eV] 0.032
Direct band gap (PBE) [eV] 0.174
gap_dir_nosoc 0.178
Vacuum level [eV] 2.134
Fermi level wrt. vacuum (PBE) [eV] -4.473
Miscellaneous details
Valence band maximum wrt. vacuum (PBE) [eV] -4.490
Conduction band minimum wrt. vacuum (PBE) [eV] -4.457
minhessianeig -0.826
Dynamically stable No
Band gap (HSE06) [eV] 0.134
Direct band gap (HSE06) [eV] 0.214
Fermi level wrt. vacuum (HSE) [eV] -4.406
Valence band maximum wrt. vacuum (HSE06) [eV] -4.473
Conduction band minimum wrt. vacuum (HSE06) [eV] -4.339
Interband polarizability (x) [Å] 11.379
Interband polarizability (y) [Å] 11.590
Interband polarizability (z) [Å] 0.252
Plasma frequency (x) [eV Å0.5] 4.287
Plasma frequency (y) [eV Å0.5] 4.489
Energy [eV] -20.236
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Topology Z2=1,C_M=1
Energy above convex hull [eV/atom] 0.331
Heat of formation [eV/atom] 0.269
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