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Structure info
Layer group p2_1/m11
Layer group number 15
Structure origin exfoliated02-21
ICSD id of parent bulk structure ICSD 418061
Stability
Energy above convex hull [eV/atom] 0.000
Heat of formation [eV/atom] -2.093
Dynamically stable Yes
Basic properties
Magnetic No
Band gap (PBE) [eV] 1.188
Band gap (HSE06) [eV] 2.295
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 3.777 0.000 0.000 Yes
2 0.000 3.988 0.000 Yes
3 0.000 0.000 37.333 No
Lengths [Å] 3.777 3.988 37.333
Angles [°] 90.000 90.000 90.000

Symmetries
2D Bravais type Rectangular (op)
Layer group number 15
Layer group p2_1/m11
Space group number (bulk in AA-stacking) 11
Space group (bulk in AA-stacking) P2_1/m
Point group 2/m
Inversion symmetry Yes
Structure data
Formula Nb2I2O4
Stoichiometry ABC2
Number of atoms 8
Unit cell area [Å2] 15.063
Thickness [Å] 7.370

I2Nb2O4 (2INbO2-1)
Heat of formation [eV/atom] -2.09
Energy above convex hull [eV/atom] 0.00
Monolayers from C2DB
Nb4O8 (4NbO2-1) -2.42 eV/atom
Nb2O4 (2NbO2-1) -2.38 eV/atom
NbO2 (1NbO2-1) -2.37 eV/atom
NbO2 (1NbO2-2) -2.35 eV/atom
NbO2 (1NbO2-3) -2.20 eV/atom
Nb4IO7 (1INb4O7-1) -2.19 eV/atom
Nb2I2O4, (2INbO2-1) -2.09 eV/atom
Nb2O6 (2NbO3-1) -2.07 eV/atom
Nb4O12 (4NbO3-1) -1.83 eV/atom
Nb3I2O4 (1I2Nb3O4-1) -1.75 eV/atom
Nb2O2 (2NbO-1) -1.53 eV/atom
Nb2I2O2 (2INbO-1) -1.39 eV/atom
Nb2I4O2 (2NbOI2-1) -1.36 eV/atom
Nb2O2 (2NbO-2) -1.30 eV/atom
Nb2O2 (2NbO-3) -1.02 eV/atom
Nb2I2O (1OI2Nb2-1) -0.77 eV/atom
Nb3I7O (1ONb3I7-1) -0.74 eV/atom
Nb3I8 (1Nb3I8-1) -0.54 eV/atom
Nb2I6 (2NbI3-1) -0.42 eV/atom
Nb2I4 (2NbI2-1) -0.37 eV/atom
Nb2I6 (2NbI3-2) -0.36 eV/atom
NbI2 (1NbI2-1) -0.18 eV/atom
NbI2 (1NbI2-2) -0.12 eV/atom
NbI2 (1NbI2-3) 0.13 eV/atom
Nb2I2 (2INb-1) 0.14 eV/atom
Nb2I2 (2INb-2) 0.15 eV/atom
Bulk crystals from OQMD123
Nb2O5 -2.77 eV/atom
Nb8O16 -2.64 eV/atom
Nb3O3 -2.08 eV/atom
Nb4I4O8 -2.08 eV/atom
Nb2I4O2 -1.35 eV/atom
Nb2I6O2 -1.12 eV/atom
Nb4I16 -0.49 eV/atom
Nb2I6 -0.48 eV/atom
Nb2I10 -0.46 eV/atom
I8O20 -0.08 eV/atom
I4 0.00 eV/atom
Nb 0.00 eV/atom
O8 0.00 eV/atom

materials/ABC2/2INbO2/1/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

DVB [eV] xx yy xy
Γ -0.97 -5.93 0.00
X -2.34 -5.40 0.00
S -1.83 2.54 0.00
Y -10.20 -2.35 -0.00
kVBM -2.22 -5.83 0.00
xx yy xy
Band gap [eV] -5.80 16.13 -0.00
DCB [eV] xx yy xy
Γ -8.02 10.30 0.00
X -1.67 6.33 0.00
S -8.29 0.81 0.00
Y -2.11 0.85 -0.00
kCBM -8.02 10.30 0.00

Cij (N/m) xx yy xy
xx 168.99 21.90 -0.00
yy 16.68 113.75 -0.00
xy 0.00 0.00 65.59
Stiffness tensor eigenvalues
Eigenvalue 0 65.59 N/m
Eigenvalue 1 107.78 N/m
Eigenvalue 2 174.96 N/m

Key values [eV]
Band gap (PBE) 1.188
Direct band gap (PBE) 1.273
Valence band maximum wrt. vacuum (PBE) -5.678
Conduction band minimum wrt. vacuum (PBE) -4.490
DOS BZ

Key values [eV]
Band gap (HSE06) 2.295
Direct band gap (HSE06) 2.484
Valence band maximum wrt. vacuum (HSE06) -6.242
Conduction band minimum wrt. vacuum (HSE06) -3.947

VBM
Property (VBM) Value
Min eff. mass 0.55 m0
Max eff. mass 1.60 m0
DOS eff. mass 0.93 m0
Crystal coordinates [0.442, 0.000]
Warping parameter -0.008
Barrier height > 18.4 meV
Distance to barrier > 0.017 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.60 m0
Max eff. mass 1.56 m0
DOS eff. mass 0.97 m0
Crystal coordinates [0.057, 0.000]
Warping parameter 0.000
Barrier height > 6.7 meV
Distance to barrier > 0.0165 Å-1

ZNbij ux uy uz
Px 6.56 0.00 -0.00
Py 0.00 6.23 0.19
Pz -0.00 0.11 0.94
ZIij ux uy uz
Px -1.36 0.00 -0.00
Py -0.00 -0.12 0.08
Pz -0.00 0.01 -0.20
ZNbij ux uy uz
Px 6.56 -0.00 -0.00
Py -0.00 6.23 0.19
Pz -0.00 0.11 0.94
ZIij ux uy uz
Px -1.36 -0.00 -0.00
Py 0.00 -0.12 0.08
Pz -0.00 0.01 -0.20
ZOij ux uy uz
Px -1.31 -0.00 0.00
Py -0.00 -5.24 -0.08
Pz -0.00 -0.04 -0.19
ZOij ux uy uz
Px -3.90 -0.00 -0.00
Py 0.00 -0.87 -0.19
Pz 0.00 -0.09 -0.55
ZOij ux uy uz
Px -1.31 -0.00 0.00
Py 0.00 -5.24 -0.08
Pz -0.00 -0.04 -0.19
ZOij ux uy uz
Px -3.90 -0.00 -0.00
Py 0.00 -0.87 -0.19
Pz -0.00 -0.09 -0.55

Atom No. Chemical symbol Charges [|e|]
0 Nb 2.53
1 O -1.02
2 I -0.37
3 O -1.14
4 Nb 2.53
5 O -1.02
6 I -0.37
7 O -1.14

materials/ABC2/2INbO2/1/rpa-pol-x.png materials/ABC2/2INbO2/1/rpa-pol-z.png
materials/ABC2/2INbO2/1/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 4.715
Interband polarizability (y) [Å] 3.346
Interband polarizability (z) [Å] 0.658

materials/ABC2/2INbO2/1/ir-pol-x.png materials/ABC2/2INbO2/1/ir-pol-z.png
materials/ABC2/2INbO2/1/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 8.83
Phonons only (y) 3.53
Phonons only (z) 0.06
Total (phonons + electrons) (x) 13.54
Total (phonons + electrons) (y) 6.87
Total (phonons + electrons) (z) 0.72

Miscellaneous details
Unique ID 2INbO2-1
Number of atoms 8
Number of species 3
Formula Nb2I2O4
Reduced formula NbIO2
Stoichiometry ABC2
Unit cell area [Å2] 15.063
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/ICSD-COD/3el/Nb4I4O8
Old uid I2Nb2O4-8b99d87752f2
Space group (bulk in AA-stacking) P2_1/m
Space group number (bulk in AA-stacking) 11
Point group 2/m
Inversion symmetry Yes
Layer group number 15
Layer group p2_1/m11
2D Bravais type Rectangular (op)
Thickness [Å] 7.370
Structure origin exfoliated02-21
Band gap (PBE) [eV] 1.188
Direct band gap (PBE) [eV] 1.273
gap_dir_nosoc 1.327
Vacuum level [eV] 2.930
Fermi level wrt. vacuum (PBE) [eV] -5.084
Valence band maximum wrt. vacuum (PBE) [eV] -5.678
Conduction band minimum wrt. vacuum (PBE) [eV] -4.490
Miscellaneous details
minhessianeig -0.000
Dynamically stable Yes
Band gap (HSE06) [eV] 2.295
Direct band gap (HSE06) [eV] 2.484
Fermi level wrt. vacuum (HSE) [eV] -5.094
Valence band maximum wrt. vacuum (HSE06) [eV] -6.242
Conduction band minimum wrt. vacuum (HSE06) [eV] -3.947
Interband polarizability (x) [Å] 4.715
Interband polarizability (y) [Å] 3.346
Interband polarizability (z) [Å] 0.658
Static polarizability (phonons) (x) [Å] 8.826
Static polarizability (phonons + electrons) (x) [Å] 13.541
Static polarizability (phonons) (y) [Å] 3.528
Static polarizability (phonons + electrons) (y) [Å] 6.874
Static polarizability (phonons) (z) [Å] 0.064
Static polarizability (phonons + electrons) (z) [Å] 0.722
Energy [eV] -60.851
ICSD id of parent bulk structure ICSD 418061
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.000
Heat of formation [eV/atom] -2.093
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