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Structure info
Layer group pm2_1n
Layer group number 32
Structure origin Lyngby22_LDP
Stability
Energy above convex hull [eV/atom] 0.002
Heat of formation [eV/atom] -0.531
Dynamically stable Yes
Basic properties
Magnetic No
Band gap (PBE) [eV] 1.136
Band gap (HSE06) [eV] 1.731
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 4.139 -0.000 0.000 Yes
2 0.000 6.747 0.000 Yes
3 0.000 -0.000 37.098 No
Lengths [Å] 4.139 6.747 37.098
Angles [°] 90.000 90.000 90.000

Symmetries
2D Bravais type Rectangular (op)
Layer group number 32
Layer group pm2_1n
Space group number (bulk in AA-stacking) 31
Space group (bulk in AA-stacking) Pmn2_1
Point group mm2
Inversion symmetry No
Structure data
Formula In4Se6
Stoichiometry A2B3
Number of atoms 10
Unit cell area [Å2] 27.928
Thickness [Å] 7.669

In4Se6 (2In2Se3-1)
Heat of formation [eV/atom] -0.53
Energy above convex hull [eV/atom] 0.00
Monolayers from C2DB
In2Se2 (2InSe-1) -0.54 eV/atom
In2Se2 (2InSe-2) -0.53 eV/atom
In4Se6, (2In2Se3-1) -0.53 eV/atom
In2Se3 (1In2Se3-1) -0.53 eV/atom
In8Se12 (4In2Se3-1) -0.51 eV/atom
In3Se4 (1In3Se4-1) -0.51 eV/atom
In2Se2 (2InSe-3) -0.50 eV/atom
In2Se3 (1In2Se3-2) -0.50 eV/atom
Se12In13 (1Se12In13-1) -0.49 eV/atom
In2Se3 (1In2Se3-3) -0.48 eV/atom
Se12In14 (2Se6In7-1) -0.44 eV/atom
Se12In15 (3Se4In5-1) -0.42 eV/atom
In2Se2 (2InSe-4) -0.39 eV/atom
In2Se5 (1In2Se5-1) -0.36 eV/atom
In2Se2 (2InSe-5) -0.29 eV/atom
In2Se2 (2InSe-6) -0.23 eV/atom
In2Se4 (2InSe2-1) -0.22 eV/atom
InSe2 (1InSe2-1) -0.21 eV/atom
In2Se3 (1In2Se3-4) -0.16 eV/atom
In2Se4 (2InSe2-2) -0.16 eV/atom
In2Se4 (2InSe2-3) -0.11 eV/atom
In2Se4 (2InSe2-4) -0.04 eV/atom
InSe4 (1InSe4-1) 0.04 eV/atom
Se2 (2Se-1) 0.21 eV/atom
Se2 (2Se-2) 0.29 eV/atom
Bulk crystals from OQMD123
In4Se4 -0.53 eV/atom
In12Se18 -0.53 eV/atom
In 0.00 eV/atom
Se3 0.00 eV/atom

A2B3/2In2Se3/1/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

DVB [eV] xx yy xy
Γ -2.49 -0.34 0.00
X 2.32 0.52 0.00
S 1.13 -3.09 0.00
Y -2.12 2.09 0.00
kVBM -2.35 0.64 0.00
xx yy xy
Band gap [eV] -1.11 -4.39 -0.00
DCB [eV] xx yy xy
Γ -3.46 -3.75 0.00
X 2.86 -2.78 0.00
S 1.61 -3.61 0.00
Y -2.58 -2.15 0.00
kCBM -3.46 -3.75 0.00

Cij (N/m) xx yy xy
xx 62.84 22.33 -0.00
yy 22.24 84.16 0.00
xy 0.00 0.00 38.82
Stiffness tensor eigenvalues
Eigenvalue 0 38.82 N/m
Eigenvalue 1 48.80 N/m
Eigenvalue 2 98.20 N/m

cij [e/Å] xx yy xy
x 0.00 -0.00 0.21
y 0.21 -0.19 0.00
z -0.00 -0.00 0.00
cijclamped [e/Å] xx yy xy
x -0.00 0.00 -0.06
y -0.06 0.16 0.00
z -0.00 -0.00 -0.00

Key values [eV]
Band gap (PBE) 1.136
Direct band gap (PBE) 1.158
Valence band maximum wrt. vacuum (PBE) -6.183
Conduction band minimum wrt. vacuum (PBE) -5.047
DOS BZ

Key values [eV]
Band gap (HSE06) 1.731
Direct band gap (HSE06) 1.754
Valence band maximum wrt. vacuum (HSE06) -6.710
Conduction band minimum wrt. vacuum (HSE06) -4.979

VBM
Property (VBM) Value
Min eff. mass 0.29 m0
Max eff. mass 11.63 m0
DOS eff. mass 0.80 m0
Crystal coordinates [0.008, 0.204]
Warping parameter -0.035
Barrier height > 12.9 meV
Distance to barrier > 0.0156 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.18 m0
Max eff. mass 0.27 m0
DOS eff. mass 0.22 m0
Crystal coordinates [0.001, 0.000]
Warping parameter 0.007
Barrier height > 122.1 meV
Distance to barrier > 0.0151 Å-1

ZInij ux uy uz
Px 4.17 0.00 -0.00
Py 0.00 3.94 0.26
Pz -0.00 0.15 0.52
ZInij ux uy uz
Px 2.87 -0.00 0.00
Py 0.00 3.36 0.39
Pz 0.00 -0.03 0.34
ZSeij ux uy uz
Px -2.18 -0.00 0.00
Py 0.00 -2.58 0.43
Pz 0.00 0.04 -0.40
ZSeij ux uy uz
Px -2.74 -0.00 -0.00
Py 0.00 -1.98 -0.25
Pz -0.00 -0.04 -0.23
ZSeij ux uy uz
Px -2.12 0.00 -0.00
Py 0.00 -2.74 -0.29
Pz -0.00 -0.08 -0.23
ZInij ux uy uz
Px 4.17 -0.00 0.00
Py -0.00 3.94 -0.26
Pz 0.00 -0.15 0.52
ZInij ux uy uz
Px 2.87 0.00 0.00
Py -0.00 3.36 -0.39
Pz 0.00 0.03 0.34
ZSeij ux uy uz
Px -2.18 0.00 0.00
Py 0.00 -2.58 -0.43
Pz 0.00 -0.04 -0.40
ZSeij ux uy uz
Px -2.74 -0.00 0.00
Py -0.00 -1.98 0.25
Pz 0.00 0.04 -0.23
ZSeij ux uy uz
Px -2.12 -0.00 -0.00
Py 0.00 -2.74 0.29
Pz 0.00 0.08 -0.23

Atom No. Chemical symbol Charges [|e|]
0 In 1.08
1 In 1.08
2 In 1.00
3 In 1.00
4 Se -0.76
5 Se -0.76
6 Se -0.67
7 Se -0.67
8 Se -0.66
9 Se -0.66

A2B3/2In2Se3/1/rpa-pol-x.png A2B3/2In2Se3/1/rpa-pol-z.png
A2B3/2In2Se3/1/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 6.050
Interband polarizability (y) [Å] 6.496
Interband polarizability (z) [Å] 0.675

A2B3/2In2Se3/1/ir-pol-x.png A2B3/2In2Se3/1/ir-pol-z.png
A2B3/2In2Se3/1/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 6.00
Phonons only (y) 7.07
Phonons only (z) 0.05
Total (phonons + electrons) (x) 12.04
Total (phonons + electrons) (y) 13.57
Total (phonons + electrons) (z) 0.73

Miscellaneous details
Unique ID 2In2Se3-1
Number of atoms 10
Number of species 2
Formula In4Se6
Reduced formula In2Se3
Stoichiometry A2B3
Unit cell area [Å2] 27.928
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree_LDP/A2B3/In2Se3/In4Se6-aab434491218
Old uid In4Se6-5aa8560dfab5
Space group (bulk in AA-stacking) Pmn2_1
Space group number (bulk in AA-stacking) 31
Point group mm2
Inversion symmetry No
Layer group number 32
Layer group pm2_1n
2D Bravais type Rectangular (op)
Thickness [Å] 7.669
Structure origin Lyngby22_LDP
Band gap (PBE) [eV] 1.136
Direct band gap (PBE) [eV] 1.158
gap_dir_nosoc 1.182
Vacuum level [eV] 2.729
Fermi level wrt. vacuum (PBE) [eV] -5.615
Valence band maximum wrt. vacuum (PBE) [eV] -6.183
Conduction band minimum wrt. vacuum (PBE) [eV] -5.047
Miscellaneous details
minhessianeig -0.000
Dynamically stable Yes
Band gap (HSE06) [eV] 1.731
Direct band gap (HSE06) [eV] 1.754
Fermi level wrt. vacuum (HSE) [eV] -5.845
Valence band maximum wrt. vacuum (HSE06) [eV] -6.710
Conduction band minimum wrt. vacuum (HSE06) [eV] -4.979
Interband polarizability (x) [Å] 6.050
Interband polarizability (y) [Å] 6.496
Interband polarizability (z) [Å] 0.675
Static polarizability (phonons) (x) [Å] 5.995
Static polarizability (phonons + electrons) (x) [Å] 12.045
Static polarizability (phonons) (y) [Å] 7.070
Static polarizability (phonons + electrons) (y) [Å] 13.566
Static polarizability (phonons) (z) [Å] 0.053
Static polarizability (phonons + electrons) (z) [Å] 0.728
Energy [eV] -37.263
Magnetic No
Total magnetic moment [μB] 0.000
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.002
Heat of formation [eV/atom] -0.531
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