Structure info | |
---|---|
Layer group | p-6m2 |
Layer group number | 78 |
Structure origin | original03-18 |
COD id of parent bulk structure | COD 9008967 |
ICSD id of parent bulk structure | ICSD 640503 |
Mono/few-layer report(s) | 10.1088/2053-1583/aab390 |
Stability | |
---|---|
Energy above convex hull [eV/atom] | 0.000 |
Heat of formation [eV/atom] | -0.538 |
Dynamically stable | Yes |
Basic properties | |
---|---|
Magnetic | No |
Band gap (PBE) [eV] | 1.404 |
Band gap (HSE06) [eV] | 2.055 |
Band gap (G₀W₀) [eV] | 2.740 |
Symmetries | |
---|---|
2D Bravais type | Hexagonal (hp) |
Layer group number | 78 |
Layer group | p-6m2 |
Space group number (bulk in AA-stacking) | 187 |
Space group (bulk in AA-stacking) | P-6m2 |
Point group | -6m2 |
Inversion symmetry | No |
Structure data | |
---|---|
Formula | In2Se2 |
Stoichiometry | AB |
Number of atoms | 4 |
Unit cell area [Å2] | 14.376 |
Thickness [Å] | 5.367 |
In2Se2 (2InSe-1) | |
---|---|
Heat of formation [eV/atom] | -0.54 |
Energy above convex hull [eV/atom] | 0.00 |
Monolayers from C2DB | |
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In2Se2, (2InSe-1) | -0.54 eV/atom |
In2Se2 (2InSe-2) | -0.53 eV/atom |
In4Se6 (2In2Se3-1) | -0.53 eV/atom |
In2Se3 (1In2Se3-1) | -0.53 eV/atom |
In8Se12 (4In2Se3-1) | -0.51 eV/atom |
In3Se4 (1In3Se4-1) | -0.51 eV/atom |
In2Se2 (2InSe-3) | -0.50 eV/atom |
In2Se3 (1In2Se3-2) | -0.50 eV/atom |
Se12In13 (1Se12In13-1) | -0.49 eV/atom |
In2Se3 (1In2Se3-3) | -0.48 eV/atom |
Se12In14 (2Se6In7-1) | -0.44 eV/atom |
Se12In15 (3Se4In5-1) | -0.42 eV/atom |
In2Se2 (2InSe-4) | -0.39 eV/atom |
In2Se5 (1In2Se5-1) | -0.36 eV/atom |
In2Se2 (2InSe-5) | -0.29 eV/atom |
In2Se2 (2InSe-6) | -0.23 eV/atom |
In2Se4 (2InSe2-1) | -0.22 eV/atom |
InSe2 (1InSe2-1) | -0.21 eV/atom |
In2Se3 (1In2Se3-4) | -0.16 eV/atom |
In2Se4 (2InSe2-2) | -0.16 eV/atom |
In2Se4 (2InSe2-3) | -0.11 eV/atom |
In2Se4 (2InSe2-4) | -0.04 eV/atom |
InSe4 (1InSe4-1) | 0.04 eV/atom |
Se2 (2Se-1) | 0.21 eV/atom |
Se2 (2Se-2) | 0.29 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -0.00 |
DVB [eV] | xx | yy | xy |
Γ | 1.81 | 1.81 | 0.00 |
M | 1.03 | 2.62 | -1.28 |
K | 1.36 | 1.40 | 0.00 |
kVBM | 2.41 | 2.09 | -0.27 |
xx | yy | xy | |
Band gap [eV] | -8.38 | -8.07 | 0.27 |
DCB [eV] | xx | yy | xy |
Γ | -5.98 | -5.98 | 0.00 |
M | -0.24 | -3.82 | 3.06 |
K | 2.91 | 2.93 | 0.00 |
kCBM | -5.98 | -5.98 | 0.00 |
Cij (N/m) | xx | yy | xy |
xx | 51.61 | 15.95 | 0.00 |
yy | 15.52 | 51.32 | 0.00 |
xy | 0.00 | 0.00 | 36.87 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 35.74 N/m |
Eigenvalue 1 | 36.87 N/m |
Eigenvalue 2 | 67.20 N/m |
cij [e/Å] | xx | yy | xy |
x | -0.00 | -0.00 | -0.04 |
y | -0.02 | 0.01 | 0.00 |
z | 0.00 | 0.00 | 0.00 |
cijclamped [e/Å] | xx | yy | xy |
x | -0.00 | -0.00 | -0.31 |
y | -0.31 | 0.31 | -0.00 |
z | -0.00 | 0.00 | 0.00 |
Key values [eV] | |
---|---|
Band gap (PBE) | 1.404 |
Direct band gap (PBE) | 1.448 |
Valence band maximum wrt. vacuum (PBE) | -5.912 |
Conduction band minimum wrt. vacuum (PBE) | -4.507 |
Key values [eV] | |
---|---|
Band gap (HSE06) | 2.055 |
Direct band gap (HSE06) | 2.097 |
Valence band maximum wrt. vacuum (HSE06) | -6.369 |
Conduction band minimum wrt. vacuum (HSE06) | -4.313 |
Key values [eV] | |
---|---|
Band gap (G₀W₀) | 2.740 |
Direct band gap (G₀W₀) | 2.775 |
Valence band maximum wrt. vacuum (G₀W₀) | -6.970 |
Conduction band minimum wrt. vacuum (G₀W₀) | -4.230 |
Property (VBM) | Value |
---|---|
Min eff. mass | 2.57 m0 |
Max eff. mass | 11.35 m0 |
DOS eff. mass | 5.11 m0 |
Crystal coordinates | [0.080, 0.080] |
Warping parameter | -0.020 |
Barrier height | > 4.9 meV |
Distance to barrier | > 0.0179 Å-1 |
Property (CBM) | Value |
---|---|
Min eff. mass | 0.20 m0 |
Max eff. mass | 0.20 m0 |
DOS eff. mass | 0.20 m0 |
Crystal coordinates | [0.000, 0.000] |
Warping parameter | 0.000 |
Barrier height | > 227.8 meV |
Distance to barrier | > 0.0177 Å-1 |
ZInij | ux | uy | uz |
Px | 2.42 | 0.00 | -0.00 |
Py | -0.00 | 2.42 | 0.00 |
Pz | -0.00 | 0.00 | 0.26 |
ZSeij | ux | uy | uz |
Px | -2.42 | -0.00 | 0.00 |
Py | -0.00 | -2.42 | -0.00 |
Pz | 0.00 | 0.00 | -0.26 |
ZInij | ux | uy | uz |
Px | 2.42 | 0.00 | 0.00 |
Py | -0.00 | 2.42 | -0.00 |
Pz | 0.00 | 0.00 | 0.26 |
ZSeij | ux | uy | uz |
Px | -2.42 | -0.00 | -0.00 |
Py | 0.00 | -2.42 | 0.00 |
Pz | 0.00 | -0.00 | -0.26 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | In | 0.66 |
1 | In | 0.71 |
2 | Se | -0.68 |
3 | Se | -0.68 |
Properties | |
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Interband polarizability (x) [Å] | 4.235 |
Interband polarizability (y) [Å] | 4.235 |
Interband polarizability (z) [Å] | 0.561 |
Plasma frequency (x) [eV Å0.5] | 0.000 |
Plasma frequency (y) [eV Å0.5] | 0.000 |
Static polarizability [Å] | |
---|---|
Phonons only (x) | 2.50 |
Phonons only (y) | 2.50 |
Phonons only (z) | 0.02 |
Total (phonons + electrons) (x) | 6.74 |
Total (phonons + electrons) (y) | 6.73 |
Total (phonons + electrons) (z) | 0.58 |
Exciton binding energy (BSE) [eV] | 0.67 |
Element | Relations |
---|---|
yyy | yyy=-xxy=-yxx=-xyx |
Others | 0=xxx=xxz=xyy=xyz=xzx=xzy=xzz=yxy=yxz=yyx=yyz=yzx= yzy=yzz=zxx=zxy=zxz=zyx=zyy=zyz=zzx=zzy=zzz |
Element | Relations |
---|---|
yyy | yyy=-xyx=-yxx=-xxy |
Others | 0=xxx=xxz=xyy=xyz=xzx=xzy=xzz=yxy=yxz=yyx=yyz=yzx= yzy=yzz=zxx=zxy=zxz=zyx=zyy=zyz=zzx=zzy=zzz |
Miscellaneous details | |
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Unique ID | 2InSe-1 |
Number of atoms | 4 |
Number of species | 2 |
Formula | In2Se2 |
Reduced formula | InSe |
Stoichiometry | AB |
Unit cell area [Å2] | 14.376 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/tree/AB/InSe/In2Se2-eb204c739879 |
Old uid | In2Se2-eb204c739879 |
Space group (bulk in AA-stacking) | P-6m2 |
Space group number (bulk in AA-stacking) | 187 |
Point group | -6m2 |
Inversion symmetry | No |
Layer group number | 78 |
Layer group | p-6m2 |
2D Bravais type | Hexagonal (hp) |
Thickness [Å] | 5.367 |
Structure origin | original03-18 |
Band gap (PBE) [eV] | 1.404 |
Direct band gap (PBE) [eV] | 1.448 |
gap_dir_nosoc | 1.501 |
Vacuum level [eV] | 3.968 |
Fermi level wrt. vacuum (PBE) [eV] | -5.209 |
Valence band maximum wrt. vacuum (PBE) [eV] | -5.912 |
Conduction band minimum wrt. vacuum (PBE) [eV] | -4.507 |
minhessianeig | -0.000 |
Dynamically stable | Yes |
Band gap (HSE06) [eV] | 2.055 |
Direct band gap (HSE06) [eV] | 2.097 |
Fermi level wrt. vacuum (HSE) [eV] | -5.243 |
Miscellaneous details | |
---|---|
Valence band maximum wrt. vacuum (HSE06) [eV] | -6.369 |
Conduction band minimum wrt. vacuum (HSE06) [eV] | -4.313 |
Band gap (G₀W₀) [eV] | 2.740 |
Direct band gap (G₀W₀) [eV] | 2.775 |
Fermi level wrt. vacuum (G₀W₀) [eV] | -5.600 |
Valence band maximum wrt. vacuum (G₀W₀) [eV] | -6.970 |
Conduction band minimum wrt. vacuum (G₀W₀) [eV] | -4.230 |
E_B | 0.667 |
Interband polarizability (x) [Å] | 4.235 |
Interband polarizability (y) [Å] | 4.235 |
Interband polarizability (z) [Å] | 0.561 |
Static polarizability (phonons) (x) [Å] | 2.500 |
Static polarizability (phonons + electrons) (x) [Å] | 6.735 |
Static polarizability (phonons) (y) [Å] | 2.500 |
Static polarizability (phonons + electrons) (y) [Å] | 6.735 |
Static polarizability (phonons) (z) [Å] | 0.022 |
Static polarizability (phonons + electrons) (z) [Å] | 0.584 |
Plasma frequency (x) [eV Å0.5] | 0.000 |
Plasma frequency (y) [eV Å0.5] | 0.000 |
Energy [eV] | -14.642 |
ICSD id of parent bulk structure | ICSD 640503 |
COD id of parent bulk structure | COD 9008967 |
Mono/few-layer report(s) | 10.1088/2053-1583/aab390 |
Magnetic | No |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Energy above convex hull [eV/atom] | 0.000 |
Heat of formation [eV/atom] | -0.538 |