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Structure info
Layer group p-3m1
Layer group number 72
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.003
Heat of formation [eV/atom] -0.534
Dynamically stable Yes
Basic properties
Magnetic No
Band gap (PBE) [eV] 1.321
Band gap (HSE06) [eV] 1.963
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 4.085 0.000 0.000 Yes
2 -2.042 3.537 0.000 Yes
3 0.000 0.000 20.356 No
Lengths [Å] 4.085 4.085 20.356
Angles [°] 90.000 90.000 120.000

Symmetries
2D Bravais type Hexagonal (hp)
Layer group number 72
Layer group p-3m1
Space group number (bulk in AA-stacking) 164
Space group (bulk in AA-stacking) P-3m1
Point group -3m
Inversion symmetry Yes
Structure data
Formula In2Se2
Stoichiometry AB
Number of atoms 4
Unit cell area [Å2] 14.449
Thickness [Å] 5.356

In2Se2 (2InSe-2)
Heat of formation [eV/atom] -0.53
Energy above convex hull [eV/atom] 0.00
Monolayers from C2DB
In2Se2 (2InSe-1) -0.54 eV/atom
In2Se2, (2InSe-2) -0.53 eV/atom
In4Se6 (2In2Se3-1) -0.53 eV/atom
In2Se3 (1In2Se3-1) -0.53 eV/atom
In8Se12 (4In2Se3-1) -0.51 eV/atom
In3Se4 (1In3Se4-1) -0.51 eV/atom
In2Se2 (2InSe-3) -0.50 eV/atom
In2Se3 (1In2Se3-2) -0.50 eV/atom
Se12In13 (1Se12In13-1) -0.49 eV/atom
In2Se3 (1In2Se3-3) -0.48 eV/atom
Se12In14 (2Se6In7-1) -0.44 eV/atom
Se12In15 (3Se4In5-1) -0.42 eV/atom
In2Se2 (2InSe-4) -0.39 eV/atom
In2Se5 (1In2Se5-1) -0.36 eV/atom
In2Se2 (2InSe-5) -0.29 eV/atom
In2Se2 (2InSe-6) -0.23 eV/atom
In2Se4 (2InSe2-1) -0.22 eV/atom
InSe2 (1InSe2-1) -0.21 eV/atom
In2Se3 (1In2Se3-4) -0.16 eV/atom
In2Se4 (2InSe2-2) -0.16 eV/atom
In2Se4 (2InSe2-3) -0.11 eV/atom
In2Se4 (2InSe2-4) -0.04 eV/atom
InSe4 (1InSe4-1) 0.04 eV/atom
Se2 (2Se-1) 0.21 eV/atom
Se2 (2Se-2) 0.29 eV/atom
Bulk crystals from OQMD123
In4Se4 -0.53 eV/atom
In12Se18 -0.53 eV/atom
In 0.00 eV/atom
Se3 0.00 eV/atom

AB/2InSe/2/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

DVB [eV] xx yy xy
Γ 2.04 2.02 -0.00
M 0.94 2.00 -0.78
K 1.09 1.06 -0.00
kVBM 2.38 2.52 -0.14
xx yy xy
Band gap [eV] -8.39 -8.60 0.14
DCB [eV] xx yy xy
Γ -6.01 -6.08 0.00
M -0.13 -4.84 4.20
K -0.17 -0.16 -0.00
kCBM -6.01 -6.08 0.00

Cij (N/m) xx yy xy
xx 50.46 11.73 0.03
yy 12.29 50.44 0.03
xy -0.01 -0.00 39.63
Stiffness tensor eigenvalues
Eigenvalue 0 38.45 N/m
Eigenvalue 1 39.63 N/m
Eigenvalue 2 62.46 N/m

Key values [eV]
Band gap (PBE) 1.321
Direct band gap (PBE) 1.359
Valence band maximum wrt. vacuum (PBE) -5.894
Conduction band minimum wrt. vacuum (PBE) -4.573
DOS BZ

Key values [eV]
Band gap (HSE06) 1.963
Direct band gap (HSE06) 1.998
Valence band maximum wrt. vacuum (HSE06) -6.351
Conduction band minimum wrt. vacuum (HSE06) -4.389

VBM
Property (VBM) Value
Min eff. mass 2.13 m0
Max eff. mass 22.05 m0
DOS eff. mass 6.85 m0
Crystal coordinates [0.128, 0.000]
Warping parameter -0.035
Barrier height 0.0 meV
Distance to barrier 0 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.19 m0
Max eff. mass 0.19 m0
DOS eff. mass 0.19 m0
Crystal coordinates [0.000, 0.000]
Warping parameter 0.000
Barrier height > 231.0 meV
Distance to barrier > 0.0177 Å-1

ZInij ux uy uz
Px 2.47 0.00 0.00
Py 0.00 2.47 -0.00
Pz 0.00 -0.00 0.26
ZSeij ux uy uz
Px -2.47 -0.00 -0.00
Py -0.00 -2.47 0.00
Pz 0.00 0.00 -0.26
ZSeij ux uy uz
Px -2.47 -0.00 -0.00
Py -0.00 -2.47 0.00
Pz 0.00 -0.00 -0.26
ZInij ux uy uz
Px 2.47 0.00 0.00
Py 0.00 2.47 -0.00
Pz -0.00 0.00 0.26

Atom No. Chemical symbol Charges [|e|]
0 In 0.67
1 Se -0.69
2 Se -0.69
3 In 0.71

AB/2InSe/2/rpa-pol-x.png AB/2InSe/2/rpa-pol-z.png
AB/2InSe/2/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 4.204
Interband polarizability (y) [Å] 4.204
Interband polarizability (z) [Å] 0.561
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000

AB/2InSe/2/ir-pol-x.png AB/2InSe/2/ir-pol-z.png
AB/2InSe/2/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 2.63
Phonons only (y) 2.63
Phonons only (z) 0.02
Total (phonons + electrons) (x) 6.83
Total (phonons + electrons) (y) 6.83
Total (phonons + electrons) (z) 0.58

Miscellaneous details
Unique ID 2InSe-2
Number of atoms 4
Number of species 2
Formula In2Se2
Reduced formula InSe
Stoichiometry AB
Unit cell area [Å2] 14.449
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB/InSe/In2Se2-178396d52e5c
Old uid In2Se2-178396d52e5c
Space group (bulk in AA-stacking) P-3m1
Space group number (bulk in AA-stacking) 164
Point group -3m
Inversion symmetry Yes
Layer group number 72
Layer group p-3m1
2D Bravais type Hexagonal (hp)
Thickness [Å] 5.356
Structure origin original03-18
Band gap (PBE) [eV] 1.321
Direct band gap (PBE) [eV] 1.359
gap_dir_nosoc 1.408
Vacuum level [eV] 3.955
Fermi level wrt. vacuum (PBE) [eV] -5.234
Valence band maximum wrt. vacuum (PBE) [eV] -5.894
Conduction band minimum wrt. vacuum (PBE) [eV] -4.573
Miscellaneous details
minhessianeig -0.000
Dynamically stable Yes
Band gap (HSE06) [eV] 1.963
Direct band gap (HSE06) [eV] 1.998
Fermi level wrt. vacuum (HSE) [eV] -5.267
Valence band maximum wrt. vacuum (HSE06) [eV] -6.351
Conduction band minimum wrt. vacuum (HSE06) [eV] -4.389
Interband polarizability (x) [Å] 4.204
Interband polarizability (y) [Å] 4.204
Interband polarizability (z) [Å] 0.561
Static polarizability (phonons) (x) [Å] 2.627
Static polarizability (phonons + electrons) (x) [Å] 6.831
Static polarizability (phonons) (y) [Å] 2.627
Static polarizability (phonons + electrons) (y) [Å] 6.831
Static polarizability (phonons) (z) [Å] 0.022
Static polarizability (phonons + electrons) (z) [Å] 0.583
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000
Energy [eV] -14.629
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.003
Heat of formation [eV/atom] -0.534
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