Structure info | |
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Layer group | c2/m11 |
Layer group number | 18 |
Structure origin | Lyngby22_LDP |
Stability | |
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Energy above convex hull [eV/atom] | 0.038 |
Heat of formation [eV/atom] | -0.868 |
Dynamically stable | Yes |
Basic properties | |
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Magnetic | No |
Band gap (PBE) [eV] | 0.005 |
Symmetries | |
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2D Bravais type | Centered rectangular (oc) |
Layer group number | 18 |
Layer group | c2/m11 |
Space group number (bulk in AA-stacking) | 12 |
Space group (bulk in AA-stacking) | C2/m |
Point group | 2/m |
Inversion symmetry | Yes |
Structure data | |
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Formula | Nb4Se6 |
Stoichiometry | A2B3 |
Number of atoms | 10 |
Unit cell area [Å2] | 33.793 |
Thickness [Å] | 4.709 |
Nb4Se6 (2Nb2Se3-1) | |
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Heat of formation [eV/atom] | -0.87 |
Energy above convex hull [eV/atom] | 0.04 |
Monolayers from C2DB | |
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Nb7Se12 (1Nb7Se12-1) | -0.90 eV/atom |
Nb8Se12 (4Nb2Se3-1) | -0.88 eV/atom |
NbSe2 (1NbSe2-1) | -0.88 eV/atom |
Nb4Se6, (2Nb2Se3-1) | -0.87 eV/atom |
Nb7Se12 (1Nb7Se12-2) | -0.85 eV/atom |
NbSe2 (1NbSe2-2) | -0.85 eV/atom |
Nb9Se12 (3Nb3Se4-1) | -0.82 eV/atom |
Nb8Se12 (4Nb2Se3-2) | -0.80 eV/atom |
Nb9Se12 (3Nb3Se4-2) | -0.75 eV/atom |
Nb4Se12 (4NbSe3-1) | -0.70 eV/atom |
Nb2Se6 (2NbSe3-1) | -0.67 eV/atom |
Se2Nb4 (2SeNb2-1) | -0.55 eV/atom |
Nb2Se2 (2NbSe-1) | -0.53 eV/atom |
Nb2Se2 (2NbSe-2) | -0.51 eV/atom |
Nb2Se2 (2NbSe-3) | -0.46 eV/atom |
NbSe2 (1NbSe2-3) | -0.44 eV/atom |
Nb2Se2 (2NbSe-4) | -0.25 eV/atom |
Nb2Se2 (2NbSe-5) | -0.23 eV/atom |
Se2 (2Se-1) | 0.21 eV/atom |
Se2 (2Se-2) | 0.29 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -0.00 |
Cij (N/m) | xx | yy | xy |
xx | 121.07 | 14.97 | 0.01 |
yy | 15.97 | 124.70 | 0.01 |
xy | 0.00 | 0.00 | 72.93 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 72.93 N/m |
Eigenvalue 1 | 107.32 N/m |
Eigenvalue 2 | 138.45 N/m |
Key values [eV] | |
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Band gap (PBE) | 0.005 |
Direct band gap (PBE) | 0.140 |
Valence band maximum wrt. vacuum (PBE) | -4.955 |
Conduction band minimum wrt. vacuum (PBE) | -4.950 |
Miscellaneous details | |
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Unique ID | 2Nb2Se3-1 |
Number of atoms | 10 |
Number of species | 2 |
Formula | Nb4Se6 |
Reduced formula | Nb2Se3 |
Stoichiometry | A2B3 |
Unit cell area [Å2] | 33.793 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/tree_LDP/A2B3/Nb2Se3/Nb4Se6-d2eb2421cf0d |
Old uid | Nb4Se6-f90ce2acb43f |
Space group (bulk in AA-stacking) | C2/m |
Space group number (bulk in AA-stacking) | 12 |
Point group | 2/m |
Inversion symmetry | Yes |
Layer group number | 18 |
Layer group | c2/m11 |
2D Bravais type | Centered rectangular (oc) |
Thickness [Å] | 4.709 |
Structure origin | Lyngby22_LDP |
Miscellaneous details | |
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Band gap (PBE) [eV] | 0.005 |
Direct band gap (PBE) [eV] | 0.140 |
gap_dir_nosoc | 0.000 |
Vacuum level [eV] | 2.345 |
Fermi level wrt. vacuum (PBE) [eV] | -4.953 |
Valence band maximum wrt. vacuum (PBE) [eV] | -4.955 |
Conduction band minimum wrt. vacuum (PBE) [eV] | -4.950 |
minhessianeig | -0.000 |
Dynamically stable | Yes |
Energy [eV] | -70.884 |
Magnetic | No |
Total magnetic moment [μB] | 0.000 |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Energy above convex hull [eV/atom] | 0.038 |
Heat of formation [eV/atom] | -0.868 |