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Structure info
Layer group pm2m
Layer group number 27
Structure origin exfoliated02-21
ICSD id of parent bulk structure ICSD 36255
Stability
Energy above convex hull [eV/atom] 0.000
Heat of formation [eV/atom] -1.358
Dynamically stable Yes
Basic properties
Magnetic No
Ferroelectric Yes
Band gap (PBE) [eV] 1.024
Band gap (HSE06) [eV] 1.845
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 3.969 0.000 0.000 Yes
2 0.000 7.581 0.000 Yes
3 -0.000 -0.000 34.533 No
Lengths [Å] 3.969 7.581 34.533
Angles [°] 90.000 90.000 90.000

Symmetries
2D Bravais type Rectangular (op)
Layer group number 27
Layer group pm2m
Space group number (bulk in AA-stacking) 25
Space group (bulk in AA-stacking) Pmm2
Point group mm2
Inversion symmetry No
Structure data
Formula Nb2I4O2
Stoichiometry ABC2
Number of atoms 8
Unit cell area [Å2] 30.086
Thickness [Å] 4.596

Nb2O2I4 (2NbOI2-1)
Heat of formation [eV/atom] -1.36
Energy above convex hull [eV/atom] 0.00
Monolayers from C2DB
Nb4O8 (4NbO2-1) -2.42 eV/atom
Nb2O4 (2NbO2-1) -2.38 eV/atom
NbO2 (1NbO2-1) -2.37 eV/atom
NbO2 (1NbO2-2) -2.35 eV/atom
NbO2 (1NbO2-3) -2.20 eV/atom
Nb4IO7 (1INb4O7-1) -2.19 eV/atom
Nb2I2O4 (2INbO2-1) -2.09 eV/atom
Nb2O6 (2NbO3-1) -2.07 eV/atom
Nb4O12 (4NbO3-1) -1.83 eV/atom
Nb3I2O4 (1I2Nb3O4-1) -1.75 eV/atom
Nb2O2 (2NbO-1) -1.53 eV/atom
Nb2I2O2 (2INbO-1) -1.39 eV/atom
Nb2I4O2, (2NbOI2-1) -1.36 eV/atom
Nb2O2 (2NbO-2) -1.30 eV/atom
Nb2O2 (2NbO-3) -1.02 eV/atom
Nb2I2O (1OI2Nb2-1) -0.77 eV/atom
Nb3I7O (1ONb3I7-1) -0.74 eV/atom
Nb3I8 (1Nb3I8-1) -0.54 eV/atom
Nb2I6 (2NbI3-1) -0.42 eV/atom
Nb2I4 (2NbI2-1) -0.37 eV/atom
Nb2I6 (2NbI3-2) -0.36 eV/atom
NbI2 (1NbI2-1) -0.18 eV/atom
NbI2 (1NbI2-2) -0.12 eV/atom
NbI2 (1NbI2-3) 0.13 eV/atom
Nb2I2 (2INb-1) 0.14 eV/atom
Nb2I2 (2INb-2) 0.15 eV/atom
Bulk crystals from OQMD123
Nb2O5 -2.77 eV/atom
Nb8O16 -2.64 eV/atom
Nb3O3 -2.08 eV/atom
Nb4I4O8 -2.08 eV/atom
Nb2I4O2 -1.35 eV/atom
Nb2I6O2 -1.12 eV/atom
Nb4I16 -0.49 eV/atom
Nb2I6 -0.48 eV/atom
Nb2I10 -0.46 eV/atom
I8O20 -0.08 eV/atom
I4 0.00 eV/atom
Nb 0.00 eV/atom
O8 0.00 eV/atom

materials/ABC2/2NbOI2/1/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

DVB [eV] xx yy xy
Γ -2.04 0.05 -0.04
X -0.54 1.11 -0.02
S -0.04 -0.30 -0.01
Y 1.00 -0.52 -0.01
kVBM -2.04 0.05 -0.04
xx yy xy
Band gap [eV] 8.56 -0.28 -0.00
DCB [eV] xx yy xy
Γ 9.41 -2.09 -0.03
X -0.94 -5.40 -0.05
S -1.00 -0.89 -0.05
Y 6.52 -0.23 -0.04
kCBM 6.52 -0.23 -0.04

Cij (N/m) xx yy xy
xx 66.08 5.65 -0.12
yy 3.54 63.13 0.04
xy -0.00 0.01 26.21
Stiffness tensor eigenvalues
Eigenvalue 0 26.21 N/m
Eigenvalue 1 59.89 N/m
Eigenvalue 2 69.31 N/m

cij [e/Å] xx yy xy
x -1.33 0.03 -0.00
y -0.00 0.00 -0.05
z 0.00 -0.00 0.00
cijclamped [e/Å] xx yy xy
x -0.01 -0.00 -0.00
y 0.00 0.00 -0.02
z 0.00 0.00 -0.00

Key values [eV]
Band gap (PBE) 1.024
Direct band gap (PBE) 1.034
Valence band maximum wrt. vacuum (PBE) -5.215
Conduction band minimum wrt. vacuum (PBE) -4.191
DOS BZ

Key values [eV]
Band gap (HSE06) 1.845
Direct band gap (HSE06) 2.040
Valence band maximum wrt. vacuum (HSE06) -5.501
Conduction band minimum wrt. vacuum (HSE06) -3.656

VBM
Property (VBM) Value
Min eff. mass 0.65 m0
Max eff. mass 1.43 m0
DOS eff. mass 0.99 m0
Crystal coordinates [0.000, 0.000]
Warping parameter -0.005
Barrier height > 19.8 meV
Distance to barrier > 0.0158 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.72 m0
Max eff. mass 1.00 m0
DOS eff. mass 0.88 m0
Crystal coordinates [0.000, 0.496]
Warping parameter 0.002
Barrier height > 35.5 meV
Distance to barrier > 0.0158 Å-1

ZNbij ux uy uz
Px 6.44 0.01 0.00
Py 0.25 3.44 -0.00
Pz 0.00 -0.00 0.45
ZIij ux uy uz
Px -0.16 -0.00 0.01
Py -0.00 -1.65 -0.00
Pz 0.01 0.00 -0.11
ZNbij ux uy uz
Px 6.44 -0.01 -0.00
Py -0.25 3.44 -0.00
Pz -0.00 -0.00 0.45
ZIij ux uy uz
Px -0.16 0.00 -0.01
Py 0.00 -1.65 -0.00
Pz -0.01 0.00 -0.11
ZOij ux uy uz
Px -6.24 -0.06 -0.00
Py -0.26 -1.35 -0.00
Pz -0.00 0.00 -0.17
ZIij ux uy uz
Px -0.04 0.00 0.08
Py 0.00 -0.44 0.00
Pz 0.02 -0.00 -0.17
ZOij ux uy uz
Px -6.24 0.06 0.00
Py 0.26 -1.35 -0.00
Pz 0.00 0.00 -0.17
ZIij ux uy uz
Px -0.04 -0.00 -0.08
Py -0.00 -0.44 0.00
Pz -0.02 -0.00 -0.17

Atom No. Chemical symbol Charges [|e|]
0 Nb 1.80
1 O -1.03
2 I -0.41
3 I -0.35
4 Nb 1.78
5 O -1.03
6 I -0.41
7 I -0.35

Spontaneous polarization vector component [pC/m]
Px -183.061
Py -0.000
Pz 0.000

materials/ABC2/2NbOI2/1/rpa-pol-x.png materials/ABC2/2NbOI2/1/rpa-pol-z.png
materials/ABC2/2NbOI2/1/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 2.542
Interband polarizability (y) [Å] 4.094
Interband polarizability (z) [Å] 0.458

materials/ABC2/2NbOI2/1/ir-pol-x.png materials/ABC2/2NbOI2/1/ir-pol-z.png
materials/ABC2/2NbOI2/1/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 2.74
Phonons only (y) 1.84
Phonons only (z) 0.01
Total (phonons + electrons) (x) 5.29
Total (phonons + electrons) (y) 5.93
Total (phonons + electrons) (z) 0.47

Miscellaneous details
Unique ID 2NbOI2-1
Number of atoms 8
Number of species 3
Formula Nb2I4O2
Reduced formula NbI2O
Stoichiometry ABC2
Unit cell area [Å2] 30.086
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/ICSD-COD/3el/Nb4I8O4
Old uid Nb2O2I4-4a99bd580b02
Space group (bulk in AA-stacking) Pmm2
Space group number (bulk in AA-stacking) 25
Point group mm2
Inversion symmetry No
Layer group number 27
Layer group pm2m
2D Bravais type Rectangular (op)
Thickness [Å] 4.596
Structure origin exfoliated02-21
Band gap (PBE) [eV] 1.024
Direct band gap (PBE) [eV] 1.034
gap_dir_nosoc 1.108
Vacuum level [eV] 2.049
Fermi level wrt. vacuum (PBE) [eV] -4.703
Valence band maximum wrt. vacuum (PBE) [eV] -5.215
Conduction band minimum wrt. vacuum (PBE) [eV] -4.191
minhessianeig -0.000
Miscellaneous details
Dynamically stable Yes
Band gap (HSE06) [eV] 1.845
Direct band gap (HSE06) [eV] 2.040
Fermi level wrt. vacuum (HSE) [eV] -4.578
Valence band maximum wrt. vacuum (HSE06) [eV] -5.501
Conduction band minimum wrt. vacuum (HSE06) [eV] -3.656
Interband polarizability (x) [Å] 2.542
Interband polarizability (y) [Å] 4.094
Interband polarizability (z) [Å] 0.458
Static polarizability (phonons) (x) [Å] 2.745
Static polarizability (phonons + electrons) (x) [Å] 5.287
Static polarizability (phonons) (y) [Å] 1.840
Static polarizability (phonons + electrons) (y) [Å] 5.934
Static polarizability (phonons) (z) [Å] 0.015
Static polarizability (phonons + electrons) (z) [Å] 0.473
Energy [eV] -47.682
ICSD id of parent bulk structure ICSD 36255
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Ferroelectric Yes
Spontaneous polarization [pC/m] 183.061
Energy above convex hull [eV/atom] 0.000
Heat of formation [eV/atom] -1.358
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