Structure info | |
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Layer group | p-6m2 |
Layer group number | 78 |
Structure origin | original03-18 |
Stability | |
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Energy above convex hull [eV/atom] | 0.574 |
Heat of formation [eV/atom] | -0.231 |
Dynamically stable | No |
Basic properties | |
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Magnetic | No |
Band gap (PBE) [eV] | 0.000 |
Symmetries | |
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2D Bravais type | Hexagonal (hp) |
Layer group number | 78 |
Layer group | p-6m2 |
Space group number (bulk in AA-stacking) | 187 |
Space group (bulk in AA-stacking) | P-6m2 |
Point group | -6m2 |
Inversion symmetry | No |
Structure data | |
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Formula | Nb2Se2 |
Stoichiometry | AB |
Number of atoms | 4 |
Unit cell area [Å2] | 8.968 |
Thickness [Å] | 6.305 |
Nb2Se2 (2NbSe-5) | |
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Heat of formation [eV/atom] | -0.23 |
Energy above convex hull [eV/atom] | 0.57 |
Monolayers from C2DB | |
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Nb7Se12 (1Nb7Se12-1) | -0.90 eV/atom |
Nb8Se12 (4Nb2Se3-1) | -0.88 eV/atom |
NbSe2 (1NbSe2-1) | -0.88 eV/atom |
Nb4Se6 (2Nb2Se3-1) | -0.87 eV/atom |
Nb7Se12 (1Nb7Se12-2) | -0.85 eV/atom |
NbSe2 (1NbSe2-2) | -0.85 eV/atom |
Nb9Se12 (3Nb3Se4-1) | -0.82 eV/atom |
Nb8Se12 (4Nb2Se3-2) | -0.80 eV/atom |
Nb9Se12 (3Nb3Se4-2) | -0.75 eV/atom |
Nb4Se12 (4NbSe3-1) | -0.70 eV/atom |
Nb2Se6 (2NbSe3-1) | -0.67 eV/atom |
Se2Nb4 (2SeNb2-1) | -0.55 eV/atom |
Nb2Se2 (2NbSe-1) | -0.53 eV/atom |
Nb2Se2 (2NbSe-2) | -0.51 eV/atom |
Nb2Se2 (2NbSe-3) | -0.46 eV/atom |
NbSe2 (1NbSe2-3) | -0.44 eV/atom |
Nb2Se2 (2NbSe-4) | -0.25 eV/atom |
Nb2Se2, (2NbSe-5) | -0.23 eV/atom |
Se2 (2Se-1) | 0.21 eV/atom |
Se2 (2Se-2) | 0.29 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -2.84 |
Cij (N/m) | xx | yy | xy |
xx | 106.17 | -17.94 | -0.01 |
yy | -17.79 | 105.88 | -0.01 |
xy | 0.00 | 0.00 | 123.67 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 88.16 N/m |
Eigenvalue 1 | 123.67 N/m |
Eigenvalue 2 | 123.89 N/m |
Key values [eV] | |
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Band gap (PBE) | 0.000 |
Direct band gap (PBE) | 0.000 |
Fermi level wrt. vacuum (PBE) | -5.048 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | Nb | 0.58 |
1 | Nb | 0.63 |
2 | Se | -0.61 |
3 | Se | -0.61 |
Properties | |
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Interband polarizability (x) [Å] | 25.115 |
Interband polarizability (y) [Å] | 25.115 |
Interband polarizability (z) [Å] | 0.763 |
Plasma frequency (x) [eV Å0.5] | 5.863 |
Plasma frequency (y) [eV Å0.5] | 5.863 |
Miscellaneous details | |
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Unique ID | 2NbSe-5 |
Number of atoms | 4 |
Number of species | 2 |
Formula | Nb2Se2 |
Reduced formula | NbSe |
Stoichiometry | AB |
Unit cell area [Å2] | 8.968 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/tree/AB/NbSe/Nb2Se2-d3ce7385d21f |
Old uid | Nb2Se2-d3ce7385d21f |
Space group (bulk in AA-stacking) | P-6m2 |
Space group number (bulk in AA-stacking) | 187 |
Point group | -6m2 |
Inversion symmetry | No |
Layer group number | 78 |
Layer group | p-6m2 |
2D Bravais type | Hexagonal (hp) |
Thickness [Å] | 6.305 |
Structure origin | original03-18 |
Band gap (PBE) [eV] | 0.000 |
Miscellaneous details | |
---|---|
Direct band gap (PBE) [eV] | 0.000 |
gap_dir_nosoc | 0.000 |
Vacuum level [eV] | 5.923 |
Fermi level wrt. vacuum (PBE) [eV] | -5.048 |
minhessianeig | -2.836 |
Dynamically stable | No |
Interband polarizability (x) [Å] | 25.115 |
Interband polarizability (y) [Å] | 25.115 |
Interband polarizability (z) [Å] | 0.763 |
Plasma frequency (x) [eV Å0.5] | 5.863 |
Plasma frequency (y) [eV Å0.5] | 5.863 |
Energy [eV] | -28.542 |
Magnetic | No |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Energy above convex hull [eV/atom] | 0.574 |
Heat of formation [eV/atom] | -0.231 |