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Structure info
Layer group p2_1/b11
Layer group number 17
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.103
Heat of formation [eV/atom] -0.310
Dynamically stable Yes
Basic properties
Magnetic No
Band gap (PBE) [eV] 1.441
Band gap (HSE06) [eV] 2.297
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 5.735 -0.000 0.000 Yes
2 -0.000 5.905 0.000 Yes
3 0.000 0.000 16.439 No
Lengths [Å] 5.735 5.905 16.439
Angles [°] 90.000 90.000 90.000

Symmetries
2D Bravais type Rectangular (op)
Layer group number 17
Layer group p2_1/b11
Space group number (bulk in AA-stacking) 14
Space group (bulk in AA-stacking) P2_1/c
Point group 2/m
Inversion symmetry Yes
Structure data
Formula Pt2Se4
Stoichiometry AB2
Number of atoms 6
Unit cell area [Å2] 33.867
Thickness [Å] 1.503

Pt2Se4 (2PtSe2-1)
Heat of formation [eV/atom] -0.31
Energy above convex hull [eV/atom] 0.10
Monolayers from C2DB
PtSe2 (1PtSe2-1) -0.41 eV/atom
Pt2Se4, (2PtSe2-1) -0.31 eV/atom
Pt2Se2 (2PtSe-1) -0.17 eV/atom
Pt2Se6 (2PtSe3-1) -0.13 eV/atom
Pt2Se2 (2PtSe-2) -0.10 eV/atom
PtSe2 (1PtSe2-2) 0.04 eV/atom
Pt2Se2 (2PtSe-3) 0.07 eV/atom
Pt2Se2 (2PtSe-4) 0.07 eV/atom
Pt2Se2 (2PtSe-5) 0.12 eV/atom
PtSe2 (1PtSe2-3) 0.13 eV/atom
Se2 (2Se-1) 0.21 eV/atom
Se2 (2Se-2) 0.29 eV/atom
Bulk crystals from OQMD123
PtSe2 -0.40 eV/atom
Pt10Se8 -0.34 eV/atom
Pt 0.00 eV/atom
Se3 0.00 eV/atom

materials/AB2/2PtSe2/1/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

DVB [eV] xx yy xy
Γ -0.16 0.03 0.00
X -1.47 -2.00 -0.00
S -0.94 -1.54 -0.00
Y -1.50 -1.33 -0.00
kVBM -1.36 -1.97 0.00
xx yy xy
Band gap [eV] -1.51 -2.81 -0.00
DCB [eV] xx yy xy
Γ -2.40 -3.41 -0.00
X -1.22 -3.76 0.00
S -8.31 -9.24 -0.00
Y -3.91 -5.56 -0.00
kCBM -2.87 -4.78 -0.00

Cij (N/m) xx yy xy
xx 47.55 3.25 -0.00
yy 3.02 74.82 -0.00
xy 0.00 0.00 49.89
Stiffness tensor eigenvalues
Eigenvalue 0 47.20 N/m
Eigenvalue 1 49.89 N/m
Eigenvalue 2 75.18 N/m

Key values [eV]
Band gap (PBE) 1.441
Direct band gap (PBE) 1.560
Valence band maximum wrt. vacuum (PBE) -5.391
Conduction band minimum wrt. vacuum (PBE) -3.949
DOS BZ

Key values [eV]
Band gap (HSE06) 2.297
Direct band gap (HSE06) 2.442
Valence band maximum wrt. vacuum (HSE06) -6.067
Conduction band minimum wrt. vacuum (HSE06) -3.770

VBM
Property (VBM) Value
Min eff. mass 0.58 m0
Max eff. mass 1.44 m0
DOS eff. mass 0.92 m0
Crystal coordinates [0.413, 0.000]
Warping parameter -0.000
Barrier height > 23.0 meV
Distance to barrier > 0.0147 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.43 m0
Max eff. mass 1.14 m0
DOS eff. mass 0.70 m0
Crystal coordinates [-0.000, 0.310]
Warping parameter 0.000
Barrier height > 26.6 meV
Distance to barrier > 0.0145 Å-1

ZPtij ux uy uz
Px -1.74 -0.06 -0.13
Py 0.26 -1.58 -0.11
Pz 0.14 0.03 -0.13
ZSeij ux uy uz
Px 0.87 0.57 -0.02
Py 0.65 0.79 0.06
Pz -0.01 -0.01 0.07
ZSeij ux uy uz
Px 0.87 0.57 -0.02
Py 0.65 0.79 0.06
Pz -0.01 -0.01 0.07
ZPtij ux uy uz
Px -1.74 0.06 0.13
Py -0.26 -1.58 -0.11
Pz -0.14 0.03 -0.13
ZSeij ux uy uz
Px 0.87 -0.57 0.02
Py -0.65 0.79 0.06
Pz 0.01 -0.01 0.07
ZSeij ux uy uz
Px 0.87 -0.57 0.02
Py -0.65 0.79 0.06
Pz 0.01 -0.01 0.07

Atom No. Chemical symbol Charges [|e|]
0 Pt -0.02
1 Pt -0.02
2 Se 0.01
3 Se 0.01
4 Se 0.01
5 Se 0.01

materials/AB2/2PtSe2/1/rpa-pol-x.png materials/AB2/2PtSe2/1/rpa-pol-z.png
materials/AB2/2PtSe2/1/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 3.945
Interband polarizability (y) [Å] 4.119
Interband polarizability (z) [Å] 0.269
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000

materials/AB2/2PtSe2/1/ir-pol-x.png materials/AB2/2PtSe2/1/ir-pol-z.png
materials/AB2/2PtSe2/1/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 0.35
Phonons only (y) 0.32
Phonons only (z) 0.00
Total (phonons + electrons) (x) 4.29
Total (phonons + electrons) (y) 4.43
Total (phonons + electrons) (z) 0.27

materials/AB2/2PtSe2/1/absx.png
Exciton binding energy (BSE) [eV] 0.84
materials/AB2/2PtSe2/1/absz.png

materials/AB2/2PtSe2/1/Raman.png
Mode Frequency (1/cm) Degeneracy
Mode 1 0.3 3
Mode 2 74.3 1
Mode 3 99. 1
Mode 4 118.6 1
Mode 5 127.4 1
Mode 6 137.1 1
Mode 7 162.9 2
Mode 8 213.7 1
Mode 9 222.2 2
Mode 10 242.7 1
Mode 11 245.2 2
Mode 12 255. 1
Mode 13 263.8 1

Miscellaneous details
Unique ID 2PtSe2-1
Number of atoms 6
Number of species 2
Formula Pt2Se4
Reduced formula PtSe2
Stoichiometry AB2
Unit cell area [Å2] 33.867
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB2/PtSe2/Pt2Se4-60c67ebd5bd2
Old uid Pt2Se4-60c67ebd5bd2
Space group (bulk in AA-stacking) P2_1/c
Space group number (bulk in AA-stacking) 14
Point group 2/m
Inversion symmetry Yes
Layer group number 17
Layer group p2_1/b11
2D Bravais type Rectangular (op)
Thickness [Å] 1.503
Structure origin original03-18
Band gap (PBE) [eV] 1.441
Direct band gap (PBE) [eV] 1.560
gap_dir_nosoc 1.629
Vacuum level [eV] 2.794
Fermi level wrt. vacuum (PBE) [eV] -4.670
Valence band maximum wrt. vacuum (PBE) [eV] -5.391
Conduction band minimum wrt. vacuum (PBE) [eV] -3.949
minhessianeig -0.000
Miscellaneous details
Dynamically stable Yes
Band gap (HSE06) [eV] 2.297
Direct band gap (HSE06) [eV] 2.442
Fermi level wrt. vacuum (HSE) [eV] -4.919
Valence band maximum wrt. vacuum (HSE06) [eV] -6.067
Conduction band minimum wrt. vacuum (HSE06) [eV] -3.770
E_B 0.837
Interband polarizability (x) [Å] 3.945
Interband polarizability (y) [Å] 4.119
Interband polarizability (z) [Å] 0.269
Static polarizability (phonons) (x) [Å] 0.345
Static polarizability (phonons + electrons) (x) [Å] 4.291
Static polarizability (phonons) (y) [Å] 0.316
Static polarizability (phonons + electrons) (y) [Å] 4.435
Static polarizability (phonons) (z) [Å] 0.004
Static polarizability (phonons + electrons) (z) [Å] 0.273
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000
Energy [eV] -28.500
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.103
Heat of formation [eV/atom] -0.310
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