Structure info | |
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Layer group | p4/mmm |
Layer group number | 61 |
Structure origin | original03-18 |
Stability | |
---|---|
Energy above convex hull [eV/atom] | 0.433 |
Heat of formation [eV/atom] | -0.025 |
Dynamically stable | No |
Basic properties | |
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Magnetic | No |
Topology | C_M=2 |
Band gap (PBE) [eV] | 0.067 |
Band gap (HSE06) [eV] | 0.075 |
Symmetries | |
---|---|
2D Bravais type | Square (tp) |
Layer group number | 61 |
Layer group | p4/mmm |
Space group number (bulk in AA-stacking) | 123 |
Space group (bulk in AA-stacking) | P4/mmm |
Point group | 4/mmm |
Inversion symmetry | Yes |
Structure data | |
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Formula | Sn2S2 |
Stoichiometry | AB |
Number of atoms | 4 |
Unit cell area [Å2] | 31.089 |
Thickness [Å] | 0.000 |
S2Sn2 (2SSn-4) | |
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Heat of formation [eV/atom] | -0.02 |
Energy above convex hull [eV/atom] | 0.43 |
Monolayers from C2DB | |
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S4Sn4 (4SSn-1) | -0.42 eV/atom |
S2Sn2 (2SSn-1) | -0.41 eV/atom |
SnS2 (1SnS2-1) | -0.40 eV/atom |
S2Sn2 (2SSn-2) | -0.40 eV/atom |
Sn7S12 (1Sn7S12-1) | -0.38 eV/atom |
Sn9S12 (3Sn3S4-1) | -0.37 eV/atom |
Sn8S12 (4Sn2S3-1) | -0.36 eV/atom |
SSn (1SSn-1) | -0.34 eV/atom |
SnS2 (1SnS2-2) | -0.32 eV/atom |
SnS2 (1SnS2-3) | -0.12 eV/atom |
Sn2S4 (2SnS2-1) | -0.10 eV/atom |
S2Sn2 (2SSn-3) | -0.10 eV/atom |
Sn2S6 (2SnS3-1) | -0.08 eV/atom |
S2Sn2, (2SSn-4) | -0.02 eV/atom |
Sn4 (4Sn-1) | 0.26 eV/atom |
Sn2 (2Sn-1) | 0.44 eV/atom |
S2 (2S-1) | 0.45 eV/atom |
S2 (2S-2) | 0.62 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -7.26 |
Cij (N/m) | xx | yy | xy |
xx | 51.64 | 7.35 | -0.00 |
yy | 7.35 | 51.64 | -0.00 |
xy | 0.00 | 0.00 | 1.28 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 1.28 N/m |
Eigenvalue 1 | 44.29 N/m |
Eigenvalue 2 | 58.99 N/m |
Key values [eV] | |
---|---|
Band gap (PBE) | 0.067 |
Direct band gap (PBE) | 0.121 |
Valence band maximum wrt. vacuum (PBE) | -3.881 |
Conduction band minimum wrt. vacuum (PBE) | -3.814 |
Key values [eV] | |
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Band gap (HSE06) | 0.075 |
Direct band gap (HSE06) | 0.145 |
Valence band maximum wrt. vacuum (HSE06) | -3.746 |
Conduction band minimum wrt. vacuum (HSE06) | -3.671 |
Property (VBM) | Value |
---|---|
Min eff. mass | 0.08 m0 |
Max eff. mass | 0.78 m0 |
DOS eff. mass | 0.26 m0 |
Crystal coordinates | [0.412, 0.463] |
Warping parameter | -0.000 |
Barrier height | 0.0 meV |
Distance to barrier | 0 Å-1 |
Property (CBM) | Value |
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Min eff. mass | 0.11 m0 |
Max eff. mass | 0.51 m0 |
DOS eff. mass | 0.24 m0 |
Crystal coordinates | [0.418, 0.418] |
Warping parameter | 0.043 |
Barrier height | > 68.9 meV |
Distance to barrier | > 0.015 Å-1 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | Sn | 1.03 |
1 | Sn | 1.03 |
2 | S | -1.04 |
3 | S | -1.04 |
Properties | |
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Interband polarizability (x) [Å] | 5.678 |
Interband polarizability (y) [Å] | 5.678 |
Interband polarizability (z) [Å] | 0.219 |
Plasma frequency (x) [eV Å0.5] | 1.844 |
Plasma frequency (y) [eV Å0.5] | 1.844 |
Exciton binding energy (BSE) [eV] | 0.34 |
Miscellaneous details | |
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Unique ID | 2SSn-4 |
Number of atoms | 4 |
Number of species | 2 |
Formula | Sn2S2 |
Reduced formula | SnS |
Stoichiometry | AB |
Unit cell area [Å2] | 31.089 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/tree/AB/SSn/S2Sn2-b8e2ee0faa87 |
Old uid | S2Sn2-b8e2ee0faa87 |
Space group (bulk in AA-stacking) | P4/mmm |
Space group number (bulk in AA-stacking) | 123 |
Point group | 4/mmm |
Inversion symmetry | Yes |
Layer group number | 61 |
Layer group | p4/mmm |
2D Bravais type | Square (tp) |
Thickness [Å] | 0.000 |
Structure origin | original03-18 |
Band gap (PBE) [eV] | 0.067 |
Direct band gap (PBE) [eV] | 0.121 |
gap_dir_nosoc | 0.000 |
Vacuum level [eV] | 2.135 |
Fermi level wrt. vacuum (PBE) [eV] | -3.847 |
Miscellaneous details | |
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Valence band maximum wrt. vacuum (PBE) [eV] | -3.881 |
Conduction band minimum wrt. vacuum (PBE) [eV] | -3.814 |
minhessianeig | -7.261 |
Dynamically stable | No |
Band gap (HSE06) [eV] | 0.075 |
Direct band gap (HSE06) [eV] | 0.145 |
Fermi level wrt. vacuum (HSE) [eV] | -3.728 |
Valence band maximum wrt. vacuum (HSE06) [eV] | -3.746 |
Conduction band minimum wrt. vacuum (HSE06) [eV] | -3.671 |
E_B | 0.343 |
Interband polarizability (x) [Å] | 5.678 |
Interband polarizability (y) [Å] | 5.678 |
Interband polarizability (z) [Å] | 0.219 |
Plasma frequency (x) [eV Å0.5] | 1.844 |
Plasma frequency (y) [eV Å0.5] | 1.844 |
Energy [eV] | -16.367 |
Magnetic | No |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Topology | C_M=2 |
Energy above convex hull [eV/atom] | 0.433 |
Heat of formation [eV/atom] | -0.025 |