Structure info | |
---|---|
Layer group | pmma |
Layer group number | 41 |
Structure origin | Wang23 |
Stability | |
---|---|
Energy above convex hull [eV/atom] | 0.083 |
Heat of formation [eV/atom] | -0.042 |
Dynamically stable | Yes |
Basic properties | |
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Magnetic | No |
Band gap (PBE) [eV] | 0.100 |
Band gap (HSE06) [eV] | 1.209 |
Symmetries | |
---|---|
2D Bravais type | Rectangular (op) |
Layer group number | 41 |
Layer group | pmma |
Space group number (bulk in AA-stacking) | 51 |
Space group (bulk in AA-stacking) | Pmma |
Point group | mmm |
Inversion symmetry | Yes |
Structure data | |
---|---|
Formula | Cu4Se2 |
Stoichiometry | AB2 |
Number of atoms | 6 |
Unit cell area [Å2] | 22.262 |
Thickness [Å] | 3.846 |
Se2Cu4 (2SeCu2-2) | |
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Heat of formation [eV/atom] | -0.04 |
Energy above convex hull [eV/atom] | 0.08 |
Monolayers from C2DB | |
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Se2Cu3 (1Se2Cu3-1) | -0.11 eV/atom |
Se2Cu4 (2SeCu2-1) | -0.11 eV/atom |
Cu2Se2 (2CuSe-1) | -0.09 eV/atom |
Cu2Se2 (2CuSe-2) | -0.08 eV/atom |
Cu2Se2 (2CuSe-3) | -0.07 eV/atom |
Se5Cu6 (1Se5Cu6-1) | -0.07 eV/atom |
Se2Cu4, (2SeCu2-2) | -0.04 eV/atom |
Cu2Se2 (2CuSe-4) | -0.04 eV/atom |
Cu2Se4 (2CuSe2-1) | -0.00 eV/atom |
Cu2Se2 (2CuSe-5) | 0.02 eV/atom |
CuSe2 (1CuSe2-1) | 0.03 eV/atom |
Cu2Se4 (2CuSe2-2) | 0.10 eV/atom |
CuSe2 (1CuSe2-2) | 0.12 eV/atom |
Cu2Se2 (2CuSe-6) | 0.12 eV/atom |
SeCu2 (1SeCu2-1) | 0.14 eV/atom |
CuSe2 (1CuSe2-3) | 0.17 eV/atom |
Se2 (2Se-1) | 0.21 eV/atom |
Se2 (2Se-2) | 0.29 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -0.00 |
Cij (N/m) | xx | yy | xy |
xx | 15.93 | 2.57 | -0.00 |
yy | 2.06 | 74.52 | 0.00 |
xy | 0.00 | 0.00 | 13.94 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 13.94 N/m |
Eigenvalue 1 | 15.84 N/m |
Eigenvalue 2 | 74.61 N/m |
Key values [eV] | |
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Band gap (PBE) | 0.100 |
Direct band gap (PBE) | 0.395 |
Valence band maximum wrt. vacuum (PBE) | -4.730 |
Conduction band minimum wrt. vacuum (PBE) | -4.630 |
Key values [eV] | |
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Band gap (HSE06) | 1.209 |
Direct band gap (HSE06) | 1.470 |
Valence band maximum wrt. vacuum (HSE06) | -6.017 |
Conduction band minimum wrt. vacuum (HSE06) | -4.808 |
ZCuij | ux | uy | uz |
Px | 0.57 | -0.00 | -0.00 |
Py | 0.00 | 1.06 | -0.00 |
Pz | -0.00 | -0.00 | 0.10 |
ZCuij | ux | uy | uz |
Px | 0.53 | -0.00 | 0.57 |
Py | -0.00 | -0.00 | 0.00 |
Pz | 0.07 | -0.00 | 0.11 |
ZSeij | ux | uy | uz |
Px | -1.10 | 0.00 | 0.00 |
Py | -0.00 | -1.06 | -0.00 |
Pz | 0.00 | -0.00 | -0.21 |
ZCuij | ux | uy | uz |
Px | 0.57 | -0.00 | 0.00 |
Py | 0.00 | 1.06 | 0.00 |
Pz | -0.00 | 0.00 | 0.10 |
ZCuij | ux | uy | uz |
Px | 0.53 | -0.00 | -0.57 |
Py | -0.00 | -0.00 | -0.00 |
Pz | -0.07 | 0.00 | 0.11 |
ZSeij | ux | uy | uz |
Px | -1.10 | 0.00 | -0.00 |
Py | -0.00 | -1.06 | 0.00 |
Pz | 0.00 | 0.00 | -0.21 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | Cu | 0.26 |
1 | Cu | 0.26 |
2 | Cu | 0.21 |
3 | Cu | 0.21 |
4 | Se | -0.47 |
5 | Se | -0.47 |
Properties | |
---|---|
Interband polarizability (x) [Å] | 2.893 |
Interband polarizability (y) [Å] | 4.986 |
Interband polarizability (z) [Å] | 0.397 |
Miscellaneous details | |
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Unique ID | 2SeCu2-2 |
Number of atoms | 6 |
Number of species | 2 |
Formula | Cu4Se2 |
Reduced formula | Cu2Se |
Stoichiometry | AB2 |
Unit cell area [Å2] | 22.262 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/tree_Wang23/AB2/SeCu2/Se2Cu4-f6fe5be7f1aa |
Old uid | Se2Cu4-92ceaa56d8a0 |
Space group (bulk in AA-stacking) | Pmma |
Space group number (bulk in AA-stacking) | 51 |
Point group | mmm |
Inversion symmetry | Yes |
Layer group number | 41 |
Layer group | pmma |
2D Bravais type | Rectangular (op) |
Thickness [Å] | 3.846 |
Structure origin | Wang23 |
Band gap (PBE) [eV] | 0.100 |
Direct band gap (PBE) [eV] | 0.395 |
gap_dir_nosoc | 0.398 |
Vacuum level [eV] | 2.685 |
Miscellaneous details | |
---|---|
Fermi level wrt. vacuum (PBE) [eV] | -4.680 |
Valence band maximum wrt. vacuum (PBE) [eV] | -4.730 |
Conduction band minimum wrt. vacuum (PBE) [eV] | -4.630 |
minhessianeig | -0.000 |
Dynamically stable | Yes |
Band gap (HSE06) [eV] | 1.209 |
Direct band gap (HSE06) [eV] | 1.470 |
Fermi level wrt. vacuum (HSE) [eV] | -5.412 |
Valence band maximum wrt. vacuum (HSE06) [eV] | -6.017 |
Conduction band minimum wrt. vacuum (HSE06) [eV] | -4.808 |
Interband polarizability (x) [Å] | 2.893 |
Interband polarizability (y) [Å] | 4.986 |
Interband polarizability (z) [Å] | 0.397 |
Energy [eV] | -21.922 |
Magnetic | No |
Total magnetic moment [μB] | 0.000 |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Energy above convex hull [eV/atom] | 0.083 |
Heat of formation [eV/atom] | -0.042 |