Structure info | |
---|---|
Layer group | p4/nmm |
Layer group number | 64 |
Structure origin | exfoliated02-21 |
COD id of parent bulk structure | COD 1540056 |
Stability | |
---|---|
Energy above convex hull [eV/atom] | 0.000 |
Heat of formation [eV/atom] | -0.487 |
Dynamically stable | Yes |
Basic properties | |
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Magnetic | No |
Band gap (PBE) [eV] | 0.000 |
Symmetries | |
---|---|
2D Bravais type | Square (tp) |
Layer group number | 64 |
Layer group | p4/nmm |
Space group number (bulk in AA-stacking) | 129 |
Space group (bulk in AA-stacking) | P4/nmm |
Point group | 4/mmm |
Inversion symmetry | Yes |
Structure data | |
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Formula | Ta4Se2 |
Stoichiometry | AB2 |
Number of atoms | 6 |
Unit cell area [Å2] | 11.507 |
Thickness [Å] | 7.275 |
Se2Ta4 (2SeTa2-1) | |
---|---|
Heat of formation [eV/atom] | -0.49 |
Energy above convex hull [eV/atom] | 0.00 |
Monolayers from C2DB | |
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TaSe2 (1TaSe2-1) | -0.84 eV/atom |
TaSe2 (1TaSe2-2) | -0.81 eV/atom |
Ta4Se6 (2Ta2Se3-1) | -0.79 eV/atom |
Ta7Se12 (1Ta7Se12-1) | -0.77 eV/atom |
Ta4Se12 (4TaSe3-1) | -0.68 eV/atom |
Ta8Se12 (4Ta2Se3-1) | -0.66 eV/atom |
Ta2Se6 (2TaSe3-1) | -0.63 eV/atom |
Ta9Se12 (3Ta3Se4-1) | -0.56 eV/atom |
Se2Ta4, (2SeTa2-1) | -0.49 eV/atom |
Se2Ta2 (2SeTa-1) | -0.38 eV/atom |
TaSe2 (1TaSe2-3) | -0.37 eV/atom |
Se2Ta2 (2SeTa-2) | -0.34 eV/atom |
Se2Ta2 (2SeTa-3) | -0.30 eV/atom |
Se2Ta2 (2SeTa-4) | -0.13 eV/atom |
Se2Ta2 (2SeTa-5) | -0.12 eV/atom |
Se2 (2Se-1) | 0.21 eV/atom |
Se2 (2Se-2) | 0.29 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -0.00 |
Cij (N/m) | xx | yy | xy |
xx | 210.76 | 95.57 | -0.00 |
yy | 95.57 | 210.76 | -0.00 |
xy | 0.00 | 0.00 | 188.30 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 115.19 N/m |
Eigenvalue 1 | 188.30 N/m |
Eigenvalue 2 | 306.32 N/m |
Key values [eV] | |
---|---|
Band gap (PBE) | 0.000 |
Direct band gap (PBE) | 0.000 |
Fermi level wrt. vacuum (PBE) | -3.720 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | Ta | 0.63 |
1 | Se | -0.89 |
2 | Ta | 0.26 |
3 | Ta | 0.63 |
4 | Se | -0.89 |
5 | Ta | 0.26 |
Properties | |
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Interband polarizability (x) [Å] | 114.598 |
Interband polarizability (y) [Å] | 114.598 |
Interband polarizability (z) [Å] | 1.066 |
Plasma frequency (x) [eV Å0.5] | 6.820 |
Plasma frequency (y) [eV Å0.5] | 6.820 |
Miscellaneous details | |
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Unique ID | 2SeTa2-1 |
Number of atoms | 6 |
Number of species | 2 |
Formula | Ta4Se2 |
Reduced formula | Ta2Se |
Stoichiometry | AB2 |
Unit cell area [Å2] | 11.507 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/ICSD-COD/2el/Ta4Se2 |
Old uid | Se2Ta4-683e13afb9a4 |
Space group (bulk in AA-stacking) | P4/nmm |
Space group number (bulk in AA-stacking) | 129 |
Point group | 4/mmm |
Inversion symmetry | Yes |
Layer group number | 64 |
Layer group | p4/nmm |
2D Bravais type | Square (tp) |
Thickness [Å] | 7.275 |
Structure origin | exfoliated02-21 |
Band gap (PBE) [eV] | 0.000 |
Miscellaneous details | |
---|---|
Direct band gap (PBE) [eV] | 0.000 |
gap_dir_nosoc | 0.000 |
Vacuum level [eV] | 3.947 |
Fermi level wrt. vacuum (PBE) [eV] | -3.720 |
minhessianeig | -0.000 |
Dynamically stable | Yes |
Interband polarizability (x) [Å] | 114.598 |
Interband polarizability (y) [Å] | 114.598 |
Interband polarizability (z) [Å] | 1.066 |
Plasma frequency (x) [eV Å0.5] | 6.820 |
Plasma frequency (y) [eV Å0.5] | 6.820 |
Energy [eV] | -49.153 |
COD id of parent bulk structure | COD 1540056 |
Magnetic | No |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Energy above convex hull [eV/atom] | 0.000 |
Heat of formation [eV/atom] | -0.487 |