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Structure info
Layer group p-3m1
Layer group number 72
Structure origin original03-18
Stability
Energy above convex hull [eV/atom] 0.259
Heat of formation [eV/atom] -0.872
Dynamically stable Yes
Basic properties
Magnetic No
Topology Z2=1
Band gap (PBE) [eV] 0.041
Band gap (HSE06) [eV] 0.026
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 4.042 0.000 0.000 Yes
2 -2.021 3.502 0.000 Yes
3 0.000 0.000 18.856 No
Lengths [Å] 4.042 4.043 18.856
Angles [°] 90.000 90.000 119.987

Symmetries
2D Bravais type Hexagonal (hp)
Layer group number 72
Layer group p-3m1
Space group number (bulk in AA-stacking) 164
Space group (bulk in AA-stacking) P-3m1
Point group -3m
Inversion symmetry Yes
Structure data
Formula Ti2Se2
Stoichiometry AB
Number of atoms 4
Unit cell area [Å2] 14.154
Thickness [Å] 3.559

Se2Ti2 (2SeTi-1)
Heat of formation [eV/atom] -0.87
Energy above convex hull [eV/atom] 0.26
Monolayers from C2DB
Ti4Se8 (4TiSe2-1) -1.13 eV/atom
Ti2Se3 (1Ti2Se3-1) -1.12 eV/atom
TiSe2 (1TiSe2-1) -1.12 eV/atom
TiSe2 (1TiSe2-2) -1.00 eV/atom
Ti2Se2, (2SeTi-1) -0.87 eV/atom
TiSe2 (1TiSe2-3) -0.86 eV/atom
Ti2Se2 (2SeTi-2) -0.83 eV/atom
Ti2Se6 (2TiSe3-1) -0.83 eV/atom
Ti2Se2 (2SeTi-3) -0.78 eV/atom
Ti2Se2 (2SeTi-4) -0.56 eV/atom
Ti2Se2 (2SeTi-5) -0.55 eV/atom
Se2 (2Se-1) 0.21 eV/atom
Se2 (2Se-2) 0.29 eV/atom
Bulk crystals from OQMD123
Ti6Se8 -1.22 eV/atom
Ti2Se4 -1.12 eV/atom
Ti5Se4 -1.06 eV/atom
Ti24Se12 -0.83 eV/atom
Se3 0.00 eV/atom
Ti3 0.00 eV/atom

materials/AB/2SeTi/1/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

Cij (N/m) xx yy xy
xx 50.23 41.85 0.01
yy 42.61 50.33 0.02
xy -0.01 -0.02 8.96
Stiffness tensor eigenvalues
Eigenvalue 0 8.05 N/m
Eigenvalue 1 8.96 N/m
Eigenvalue 2 92.51 N/m

Key values [eV]
Band gap (PBE) 0.041
Direct band gap (PBE) 0.041
Valence band maximum wrt. vacuum (PBE) -4.204
Conduction band minimum wrt. vacuum (PBE) -4.163
DOS BZ

Key values [eV]
Band gap (HSE06) 0.026
Direct band gap (HSE06) 0.026
Valence band maximum wrt. vacuum (HSE06) -3.788
Conduction band minimum wrt. vacuum (HSE06) -3.762

VBM
Property (VBM) Value
Min eff. mass 0.03 m0
Max eff. mass 0.07 m0
DOS eff. mass 0.05 m0
Crystal coordinates [0.213, 0.213]
Warping parameter -0.000
Barrier height > 76.3 meV
Distance to barrier > 0.0179 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.03 m0
Max eff. mass 0.08 m0
DOS eff. mass 0.04 m0
Crystal coordinates [0.213, 0.213]
Warping parameter 0.000
Barrier height > 77.6 meV
Distance to barrier > 0.018 Å-1

ZSeij ux uy uz
Px 73.92 36.89 -102.69
Py 0.03 63.75 58.93
Pz 0.00 -0.00 -0.16
ZTiij ux uy uz
Px -73.64 -37.12 102.82
Py -0.04 -62.93 -59.03
Pz -0.00 0.00 0.16
ZSeij ux uy uz
Px 73.91 36.89 -102.70
Py 0.03 63.75 58.93
Pz 0.00 -0.00 -0.16
ZTiij ux uy uz
Px -73.67 -37.12 102.82
Py -0.04 -62.96 -59.03
Pz -0.00 0.00 0.16

Atom No. Chemical symbol Charges [|e|]
0 Se -1.14
1 Se -1.14
2 Ti 1.14
3 Ti 1.14

materials/AB/2SeTi/1/berry-phases0.png

materials/AB/2SeTi/1/rpa-pol-x.png materials/AB/2SeTi/1/rpa-pol-z.png
materials/AB/2SeTi/1/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 128.615
Interband polarizability (y) [Å] 131.200
Interband polarizability (z) [Å] 0.404
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000

materials/AB/2SeTi/1/ir-pol-x.png materials/AB/2SeTi/1/ir-pol-z.png
materials/AB/2SeTi/1/ir-pol-y.png
Static polarizability [Å]
Phonons only (x) 4591.79
Phonons only (y) 2000.99
Phonons only (z) 0.01
Total (phonons + electrons) (x) 4720.40
Total (phonons + electrons) (y) 2132.19
Total (phonons + electrons) (z) 0.41

materials/AB/2SeTi/1/Raman.png
Mode Frequency (1/cm) Degeneracy
Mode 1 0. 3
Mode 2 68.4 2
Mode 3 167.7 1
Mode 4 263.2 2
Mode 5 277.9 1
Mode 6 311.7 2
Mode 7 329.3 1

Miscellaneous details
Unique ID 2SeTi-1
Number of atoms 4
Number of species 2
Formula Ti2Se2
Reduced formula TiSe
Stoichiometry AB
Unit cell area [Å2] 14.154
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/AB/SeTi/Se2Ti2-f346fce11db3
Old uid Se2Ti2-f346fce11db3
Space group (bulk in AA-stacking) P-3m1
Space group number (bulk in AA-stacking) 164
Point group -3m
Inversion symmetry Yes
Layer group number 72
Layer group p-3m1
2D Bravais type Hexagonal (hp)
Thickness [Å] 3.559
Structure origin original03-18
Band gap (PBE) [eV] 0.041
Direct band gap (PBE) [eV] 0.041
gap_dir_nosoc 0.000
Vacuum level [eV] 3.616
Fermi level wrt. vacuum (PBE) [eV] -4.183
Valence band maximum wrt. vacuum (PBE) [eV] -4.204
Conduction band minimum wrt. vacuum (PBE) [eV] -4.163
minhessianeig -0.000
Miscellaneous details
Dynamically stable Yes
Band gap (HSE06) [eV] 0.026
Direct band gap (HSE06) [eV] 0.026
Fermi level wrt. vacuum (HSE) [eV] -3.775
Valence band maximum wrt. vacuum (HSE06) [eV] -3.788
Conduction band minimum wrt. vacuum (HSE06) [eV] -3.762
Interband polarizability (x) [Å] 128.615
Interband polarizability (y) [Å] 131.200
Interband polarizability (z) [Å] 0.404
Static polarizability (phonons) (x) [Å] 4591.785
Static polarizability (phonons + electrons) (x) [Å] 4720.400
Static polarizability (phonons) (y) [Å] 2000.986
Static polarizability (phonons + electrons) (y) [Å] 2132.186
Static polarizability (phonons) (z) [Å] 0.007
Static polarizability (phonons + electrons) (z) [Å] 0.410
Plasma frequency (x) [eV Å0.5] 0.000
Plasma frequency (y) [eV Å0.5] 0.000
Energy [eV] -23.835
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Topology Z2=1
Energy above convex hull [eV/atom] 0.259
Heat of formation [eV/atom] -0.872
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