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Structure info
Layer group p-3m1
Layer group number 72
Structure origin original03-18
Mono/few-layer report(s) 10.1038/nmat4384
Stability
Energy above convex hull [eV/atom] 0.440
Heat of formation [eV/atom] 0.440
Dynamically stable No
Basic properties
Magnetic No
Topology Z2=1
Band gap (PBE) [eV] 0.065
Band gap (HSE06) [eV] 0.082
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 4.671 0.000 0.000 Yes
2 -2.336 4.046 0.000 Yes
3 -0.000 0.000 15.200 No
Lengths [Å] 4.671 4.671 15.200
Angles [°] 90.000 90.000 120.000

Symmetries
2D Bravais type Hexagonal (hp)
Layer group number 72
Layer group p-3m1
Space group number (bulk in AA-stacking) 164
Space group (bulk in AA-stacking) P-3m1
Point group -3m
Inversion symmetry Yes
Structure data
Formula Sn2
Stoichiometry A
Number of atoms 2
Unit cell area [Å2] 18.898
Thickness [Å] 0.847

Sn2 (2Sn-1)
Heat of formation [eV/atom] 0.44
Energy above convex hull [eV/atom] 0.44
Monolayers from C2DB
Sn4 (4Sn-1) 0.26 eV/atom
Sn2, (2Sn-1) 0.44 eV/atom
Bulk crystals from OQMD123
Sn2 0.00 eV/atom

A/2Sn/1/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.04

Cij (N/m) xx yy xy
xx 28.56 11.40 -0.02
yy 11.15 28.32 0.01
xy -0.00 0.00 17.83
Stiffness tensor eigenvalues
Eigenvalue 0 17.16 N/m
Eigenvalue 1 17.83 N/m
Eigenvalue 2 39.72 N/m

Key values [eV]
Band gap (PBE) 0.065
Direct band gap (PBE) 0.083
Valence band maximum wrt. vacuum (PBE) -4.301
Conduction band minimum wrt. vacuum (PBE) -4.237
DOS BZ

Key values [eV]
Band gap (HSE06) 0.082
Direct band gap (HSE06) 0.082
Valence band maximum wrt. vacuum (HSE06) -4.357
Conduction band minimum wrt. vacuum (HSE06) -4.275

VBM
Property (VBM) Value
Min eff. mass 0.04 m0
Max eff. mass 0.04 m0
DOS eff. mass 0.04 m0
Crystal coordinates [-0.000, -0.000]
Warping parameter -0.000
Barrier height > 341.2 meV
Distance to barrier > 0.0206 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.03 m0
Max eff. mass 0.03 m0
DOS eff. mass 0.03 m0
Crystal coordinates [0.333, 0.333]
Warping parameter 0.000
Barrier height > 292.6 meV
Distance to barrier > 0.0206 Å-1

Atom No. Chemical symbol Charges [|e|]
0 Sn -0.00
1 Sn 0.00

A/2Sn/1/berry-phases0.png

A/2Sn/1/rpa-pol-x.png A/2Sn/1/rpa-pol-z.png
A/2Sn/1/rpa-pol-y.png
Properties
Interband polarizability (x) [Å] 18.315
Interband polarizability (y) [Å] 18.315
Interband polarizability (z) [Å] 0.280
Plasma frequency (x) [eV Å0.5] 0.131
Plasma frequency (y) [eV Å0.5] 0.131

A/2Sn/1/absx.png
A/2Sn/1/absz.png

Miscellaneous details
Unique ID 2Sn-1
Number of atoms 2
Number of species 1
Formula Sn2
Reduced formula Sn
Stoichiometry A
Unit cell area [Å2] 18.898
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/tree/A/Sn/Sn2-3deec82af6d4
Old uid Sn2-3deec82af6d4
Space group (bulk in AA-stacking) P-3m1
Space group number (bulk in AA-stacking) 164
Point group -3m
Inversion symmetry Yes
Layer group number 72
Layer group p-3m1
2D Bravais type Hexagonal (hp)
Thickness [Å] 0.847
Structure origin original03-18
Band gap (PBE) [eV] 0.065
Direct band gap (PBE) [eV] 0.083
gap_dir_nosoc 0.000
Vacuum level [eV] 2.136
Fermi level wrt. vacuum (PBE) [eV] -4.269
Miscellaneous details
Valence band maximum wrt. vacuum (PBE) [eV] -4.301
Conduction band minimum wrt. vacuum (PBE) [eV] -4.237
minhessianeig -0.041
Dynamically stable No
Band gap (HSE06) [eV] 0.082
Direct band gap (HSE06) [eV] 0.082
Fermi level wrt. vacuum (HSE) [eV] -4.316
Valence band maximum wrt. vacuum (HSE06) [eV] -4.357
Conduction band minimum wrt. vacuum (HSE06) [eV] -4.275
Interband polarizability (x) [Å] 18.315
Interband polarizability (y) [Å] 18.315
Interband polarizability (z) [Å] 0.280
Plasma frequency (x) [eV Å0.5] 0.131
Plasma frequency (y) [eV Å0.5] 0.131
Energy [eV] -7.232
Mono/few-layer report(s) 10.1038/nmat4384
Magnetic No
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Topology Z2=1
Energy above convex hull [eV/atom] 0.440
Heat of formation [eV/atom] 0.440
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