Structure info | |
---|---|
Layer group | pmmn |
Layer group number | 46 |
Structure origin | original03-18 |
ICSD id of parent bulk structure | ICSD 652233 |
Stability | |
---|---|
Energy above convex hull [eV/atom] | 0.000 |
Heat of formation [eV/atom] | -1.078 |
Dynamically stable | Yes |
Basic properties | |
---|---|
Magnetic | No |
Topology | Trivial |
Band gap (PBE) [eV] | 0.410 |
Band gap (HSE06) [eV] | 1.031 |
Symmetries | |
---|---|
2D Bravais type | Rectangular (op) |
Layer group number | 46 |
Layer group | pmmn |
Space group number (bulk in AA-stacking) | 59 |
Space group (bulk in AA-stacking) | Pmmn |
Point group | mmm |
Inversion symmetry | Yes |
Structure data | |
---|---|
Formula | Zr2Se6 |
Stoichiometry | AB3 |
Number of atoms | 8 |
Unit cell area [Å2] | 20.681 |
Thickness [Å] | 6.223 |
Zr2Se6 (2ZrSe3-1) | |
---|---|
Heat of formation [eV/atom] | -1.08 |
Energy above convex hull [eV/atom] | 0.00 |
Monolayers from C2DB | |
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Zr7Se12 (1Zr7Se12-1) | -1.38 eV/atom |
ZrSe2 (1ZrSe2-1) | -1.37 eV/atom |
Zr8Se12 (4Zr2Se3-1) | -1.35 eV/atom |
Zr9Se12 (3Zr3Se4-1) | -1.30 eV/atom |
Zr2Se4 (2ZrSe2-1) | -1.29 eV/atom |
ZrSe2 (1ZrSe2-2) | -1.22 eV/atom |
Zr2Se6, (2ZrSe3-1) | -1.08 eV/atom |
Se2Zr3 (1Se2Zr3-1) | -1.07 eV/atom |
ZrSe2 (1ZrSe2-3) | -1.05 eV/atom |
Se2Zr2 (2SeZr-1) | -0.91 eV/atom |
Se2Zr2 (2SeZr-2) | -0.85 eV/atom |
Se2Zr2 (2SeZr-3) | -0.83 eV/atom |
Zr2Se10 (2ZrSe5-1) | -0.73 eV/atom |
Se2Zr2 (2SeZr-4) | -0.73 eV/atom |
Se2Zr2 (2SeZr-5) | -0.70 eV/atom |
Se2 (2Se-1) | 0.21 eV/atom |
Se2 (2Se-2) | 0.29 eV/atom |
Minimum eigenvalue of Hessian [eV/Ų] | -0.00 |
DVB [eV] | xx | yy | xy |
Γ | -1.27 | -6.42 | 0.01 |
X | -0.25 | -7.57 | 0.02 |
S | -2.27 | 0.12 | -1.70 |
Y | -1.53 | -0.06 | -0.00 |
kVBM | -1.27 | -6.42 | 0.01 |
xx | yy | xy | |
Band gap [eV] | 6.53 | 6.43 | 0.01 |
DCB [eV] | xx | yy | xy |
Γ | 0.79 | 2.37 | 0.00 |
X | -0.66 | 1.90 | 0.00 |
S | -3.84 | -1.04 | 0.53 |
Y | -0.98 | -5.93 | 0.00 |
kCBM | 5.26 | 0.01 | 0.02 |
Cij (N/m) | xx | yy | xy |
xx | 77.46 | 14.94 | -0.22 |
yy | 14.72 | 109.57 | 0.12 |
xy | -0.00 | -0.00 | 42.04 |
Stiffness tensor eigenvalues | |
Eigenvalue 0 | 42.04 N/m |
Eigenvalue 1 | 71.66 N/m |
Eigenvalue 2 | 115.37 N/m |
Key values [eV] | |
---|---|
Band gap (PBE) | 0.410 |
Direct band gap (PBE) | 0.573 |
Valence band maximum wrt. vacuum (PBE) | -5.226 |
Conduction band minimum wrt. vacuum (PBE) | -4.816 |
Key values [eV] | |
---|---|
Band gap (HSE06) | 1.031 |
Direct band gap (HSE06) | 1.471 |
Valence band maximum wrt. vacuum (HSE06) | -5.642 |
Conduction band minimum wrt. vacuum (HSE06) | -4.611 |
Property (VBM) | Value |
---|---|
Min eff. mass | 0.17 m0 |
Max eff. mass | 0.68 m0 |
DOS eff. mass | 0.34 m0 |
Crystal coordinates | [-0.000, -0.000] |
Warping parameter | -0.004 |
Barrier height | > 35.1 meV |
Distance to barrier | > 0.0166 Å-1 |
Property (CBM) | Value |
---|---|
Min eff. mass | 0.14 m0 |
Max eff. mass | 4.07 m0 |
DOS eff. mass | 0.75 m0 |
Crystal coordinates | [-0.500, -0.185] |
Warping parameter | 0.001 |
Barrier height | > 5.5 meV |
Distance to barrier | > 0.0166 Å-1 |
ZZrij | ux | uy | uz |
Px | 2.31 | 0.00 | 0.00 |
Py | 0.00 | 5.73 | -0.00 |
Pz | 0.00 | -0.00 | 0.42 |
ZSeij | ux | uy | uz |
Px | -1.86 | 0.00 | -0.00 |
Py | -0.00 | -2.65 | -0.00 |
Pz | -0.00 | -0.00 | -0.24 |
ZSeij | ux | uy | uz |
Px | -0.22 | -0.00 | -0.13 |
Py | 0.00 | -1.54 | 0.00 |
Pz | 0.21 | 0.00 | -0.09 |
ZSeij | ux | uy | uz |
Px | -0.23 | 0.00 | 0.13 |
Py | 0.00 | -1.54 | 0.00 |
Pz | -0.21 | 0.00 | -0.09 |
ZZrij | ux | uy | uz |
Px | 2.31 | -0.00 | 0.00 |
Py | -0.00 | 5.73 | -0.00 |
Pz | 0.00 | -0.00 | 0.42 |
ZSeij | ux | uy | uz |
Px | -1.86 | -0.00 | -0.00 |
Py | 0.00 | -2.65 | -0.00 |
Pz | -0.00 | -0.00 | -0.24 |
ZSeij | ux | uy | uz |
Px | -0.22 | -0.00 | -0.13 |
Py | 0.00 | -1.54 | 0.00 |
Pz | 0.21 | 0.00 | -0.09 |
ZSeij | ux | uy | uz |
Px | -0.23 | -0.00 | 0.13 |
Py | -0.00 | -1.54 | 0.00 |
Pz | -0.21 | 0.00 | -0.09 |
Atom No. | Chemical symbol | Charges [|e|] |
---|---|---|
0 | Zr | 1.82 |
1 | Zr | 1.82 |
2 | Se | -0.96 |
3 | Se | -0.96 |
4 | Se | -0.45 |
5 | Se | -0.41 |
6 | Se | -0.41 |
7 | Se | -0.45 |
Properties | |
---|---|
Interband polarizability (x) [Å] | 8.527 |
Interband polarizability (y) [Å] | 7.553 |
Interband polarizability (z) [Å] | 0.614 |
Plasma frequency (x) [eV Å0.5] | 0.000 |
Plasma frequency (y) [eV Å0.5] | 0.000 |
Static polarizability [Å] | |
---|---|
Phonons only (x) | 1.65 |
Phonons only (y) | 6.35 |
Phonons only (z) | 0.02 |
Total (phonons + electrons) (x) | 10.17 |
Total (phonons + electrons) (y) | 13.90 |
Total (phonons + electrons) (z) | 0.63 |
Miscellaneous details | |
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Unique ID | 2ZrSe3-1 |
Number of atoms | 8 |
Number of species | 2 |
Formula | Zr2Se6 |
Reduced formula | ZrSe3 |
Stoichiometry | AB3 |
Unit cell area [Å2] | 20.681 |
Original file-system folder | /home/niflheim2/cmr/C2DB-ASR/tree/AB3/ZrSe3/Zr2Se6-150e33f95933 |
Old uid | Zr2Se6-150e33f95933 |
Space group (bulk in AA-stacking) | Pmmn |
Space group number (bulk in AA-stacking) | 59 |
Point group | mmm |
Inversion symmetry | Yes |
Layer group number | 46 |
Layer group | pmmn |
2D Bravais type | Rectangular (op) |
Thickness [Å] | 6.223 |
Structure origin | original03-18 |
Band gap (PBE) [eV] | 0.410 |
Direct band gap (PBE) [eV] | 0.573 |
gap_dir_nosoc | 0.657 |
Vacuum level [eV] | 5.061 |
Fermi level wrt. vacuum (PBE) [eV] | -5.021 |
Valence band maximum wrt. vacuum (PBE) [eV] | -5.226 |
Conduction band minimum wrt. vacuum (PBE) [eV] | -4.816 |
minhessianeig | -0.000 |
Miscellaneous details | |
---|---|
Dynamically stable | Yes |
Band gap (HSE06) [eV] | 1.031 |
Direct band gap (HSE06) [eV] | 1.471 |
Fermi level wrt. vacuum (HSE) [eV] | -5.161 |
Valence band maximum wrt. vacuum (HSE06) [eV] | -5.642 |
Conduction band minimum wrt. vacuum (HSE06) [eV] | -4.611 |
Interband polarizability (x) [Å] | 8.527 |
Interband polarizability (y) [Å] | 7.553 |
Interband polarizability (z) [Å] | 0.614 |
Static polarizability (phonons) (x) [Å] | 1.645 |
Static polarizability (phonons + electrons) (x) [Å] | 10.173 |
Static polarizability (phonons) (y) [Å] | 6.347 |
Static polarizability (phonons + electrons) (y) [Å] | 13.900 |
Static polarizability (phonons) (z) [Å] | 0.020 |
Static polarizability (phonons + electrons) (z) [Å] | 0.634 |
Plasma frequency (x) [eV Å0.5] | 0.000 |
Plasma frequency (y) [eV Å0.5] | 0.000 |
Energy [eV] | -44.329 |
ICSD id of parent bulk structure | ICSD 652233 |
Magnetic | No |
Spin axis | z |
Magnetic anisotropy energy, xz [meV/unit cell] | 0.000 |
Magnetic anisotropy energy, yz [meV/unit cell] | 0.000 |
Topology | Trivial |
Energy above convex hull [eV/atom] | 0.000 |
Heat of formation [eV/atom] | -1.078 |