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Structure info
Layer group p321
Layer group number 68
Structure origin Manti22_pushed
Stability
Energy above convex hull [eV/atom] 0.000
Heat of formation [eV/atom] -1.131
Dynamically stable Yes
Basic properties
Magnetic No
Band gap (PBE) [eV] 0.044
Band gap (HSE06) [eV] 0.036
XYZ CIF JSON
Axis x [Å] y [Å] z [Å] Periodic
1 7.078 -0.002 0.000 Yes
2 -3.541 6.133 0.000 Yes
3 0.000 0.000 18.105 No
Lengths [Å] 7.078 7.081 18.105
Angles [°] 90.000 90.000 120.011

Symmetries
2D Bravais type Hexagonal (hp)
Layer group number 68
Layer group p321
Space group number (bulk in AA-stacking) 150
Space group (bulk in AA-stacking) P321
Point group 32
Inversion symmetry No
Structure data
Formula Ti4Se8
Stoichiometry AB2
Number of atoms 12
Unit cell area [Å2] 43.405
Thickness [Å] 3.116

Ti4Se8 (4TiSe2-1)
Heat of formation [eV/atom] -1.13
Energy above convex hull [eV/atom] 0.00
Monolayers from C2DB
Ti4Se8, (4TiSe2-1) -1.13 eV/atom
Ti2Se3 (1Ti2Se3-1) -1.12 eV/atom
TiSe2 (1TiSe2-1) -1.12 eV/atom
TiSe2 (1TiSe2-2) -1.00 eV/atom
Ti2Se2 (2SeTi-1) -0.87 eV/atom
TiSe2 (1TiSe2-3) -0.86 eV/atom
Ti2Se2 (2SeTi-2) -0.83 eV/atom
Ti2Se6 (2TiSe3-1) -0.83 eV/atom
Ti2Se2 (2SeTi-3) -0.78 eV/atom
Ti2Se2 (2SeTi-4) -0.56 eV/atom
Ti2Se2 (2SeTi-5) -0.55 eV/atom
Se2 (2Se-1) 0.21 eV/atom
Se2 (2Se-2) 0.29 eV/atom
Bulk crystals from OQMD123
Ti6Se8 -1.22 eV/atom
Ti2Se4 -1.12 eV/atom
Ti5Se4 -1.06 eV/atom
Ti24Se12 -0.83 eV/atom
Se3 0.00 eV/atom
Ti3 0.00 eV/atom

materials/AB2/4TiSe2/1/phonon_bs.png
Minimum eigenvalue of Hessian [eV/Ų] -0.00

Cij (N/m) xx yy xy
xx 56.88 16.19 0.07
yy 16.70 56.82 0.07
xy -0.20 0.37 39.83
Stiffness tensor eigenvalues
Eigenvalue 0 39.83 N/m
Eigenvalue 1 40.41 N/m
Eigenvalue 2 73.29 N/m

cij [e/Å] xx yy xy
x -0.02 0.01 0.00
y 0.00 -0.00 0.02
z -0.00 0.00 -0.00
cijclamped [e/Å] xx yy xy
x 0.00 -0.01 0.00
y 0.00 0.00 -0.01
z -0.00 0.00 -0.00

Key values [eV]
Band gap (PBE) 0.044
Direct band gap (PBE) 0.067
Valence band maximum wrt. vacuum (PBE) -5.396
Conduction band minimum wrt. vacuum (PBE) -5.352
DOS BZ

VBM
Property (VBM) Value
Min eff. mass 0.23 m0
Max eff. mass 3.06 m0
DOS eff. mass 0.72 m0
Crystal coordinates [0.013, 0.066]
Warping parameter -0.006
Barrier height 2.6 meV
Distance to barrier 0.00855 Å-1
CBM
Property (CBM) Value
Min eff. mass 0.28 m0
Max eff. mass 0.60 m0
DOS eff. mass 0.41 m0
Crystal coordinates [0.000, -0.001]
Warping parameter 0.008
Barrier height > 38.2 meV
Distance to barrier > 0.0102 Å-1

ZTiij ux uy uz
Px 6.42 0.10 0.41
Py 0.11 6.43 0.23
Pz 0.00 0.00 0.30
ZTiij ux uy uz
Px 6.80 -0.09 0.02
Py -0.10 7.09 -0.04
Pz -0.00 -0.00 0.30
ZSeij ux uy uz
Px -3.11 -0.65 -0.06
Py 0.76 -3.22 0.01
Pz 0.00 -0.00 -0.15
ZSeij ux uy uz
Px -3.16 -0.21 0.50
Py -0.56 -3.41 -0.50
Pz -0.01 0.02 -0.15
ZSeij ux uy uz
Px -3.21 0.33 -0.48
Py 0.67 -3.45 -0.41
Pz 0.01 0.02 -0.15
ZSeij ux uy uz
Px -2.86 -0.42 0.59
Py -0.10 -3.69 -0.20
Pz -0.02 -0.00 -0.15
ZTiij ux uy uz
Px 6.36 -0.25 -0.39
Py -0.33 6.37 0.25
Pz -0.00 0.00 0.29
ZTiij ux uy uz
Px 5.94 -0.12 0.03
Py -0.07 6.71 -0.53
Pz -0.00 -0.00 0.29
ZSeij ux uy uz
Px -2.91 0.51 -0.57
Py 0.18 -3.76 -0.21
Pz 0.02 0.00 -0.15
ZSeij ux uy uz
Px -3.60 0.35 0.14
Py 0.02 -2.89 0.71
Pz -0.01 -0.01 -0.15
ZSeij ux uy uz
Px -3.58 -0.27 -0.21
Py 0.08 -2.93 0.75
Pz 0.01 -0.01 -0.15
ZSeij ux uy uz
Px -3.09 0.73 0.02
Py -0.67 -3.24 -0.06
Pz -0.00 0.00 -0.15

Atom No. Chemical symbol Charges [|e|]
0 Ti 1.59
1 Ti 1.59
2 Ti 1.60
3 Ti 1.59
4 Se -0.80
5 Se -0.79
6 Se -0.80
7 Se -0.79
8 Se -0.79
9 Se -0.80
10 Se -0.80
11 Se -0.80

materials/AB2/4TiSe2/1/berry-phases0.png

Miscellaneous details
Unique ID 4TiSe2-1
Number of atoms 12
Number of species 2
Formula Ti4Se8
Reduced formula TiSe2
Stoichiometry AB2
Unit cell area [Å2] 43.405
Original file-system folder /home/niflheim2/cmr/C2DB-ASR/push-manti-tree/AB2/new/TiSe2
Old uid Ti4Se8-2ddf55b99691
Space group (bulk in AA-stacking) P321
Space group number (bulk in AA-stacking) 150
Point group 32
Inversion symmetry No
Layer group number 68
Layer group p321
2D Bravais type Hexagonal (hp)
Thickness [Å] 3.116
Structure origin Manti22_pushed
Band gap (PBE) [eV] 0.044
Direct band gap (PBE) [eV] 0.067
Miscellaneous details
gap_dir_nosoc 0.078
Vacuum level [eV] 3.850
Fermi level wrt. vacuum (PBE) [eV] -5.374
Valence band maximum wrt. vacuum (PBE) [eV] -5.396
Conduction band minimum wrt. vacuum (PBE) [eV] -5.352
minhessianeig -0.000
Dynamically stable Yes
Band gap (HSE06) [eV] 0.036
Direct band gap (HSE06) [eV] 0.036
Fermi level wrt. vacuum (HSE) [eV] -4.881
Valence band maximum wrt. vacuum (HSE06) [eV] -4.899
Conduction band minimum wrt. vacuum (HSE06) [eV] -4.863
Energy [eV] -68.197
Magnetic No
Total magnetic moment [μB] 0.000
Spin axis z
Magnetic anisotropy energy, xz [meV/unit cell] 0.000
Magnetic anisotropy energy, yz [meV/unit cell] 0.000
Energy above convex hull [eV/atom] 0.000
Heat of formation [eV/atom] -1.131
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